OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

IPD60R380P6ATMA1

IPD60R380P6ATMA1
Mfr. #:
IPD60R380P6ATMA1
制造商:
Infineon Technologies
描述:
RF Bipolar Transistors MOSFET N-Ch 600V 10.6A DPAK-2
生命周期:
制造商新产品。
数据表:
IPD60R380P6ATMA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPD60R380P6ATMA1 更多信息
产品属性
属性值
制造商
英飞凌科技
产品分类
晶体管 - FET、MOSFET - 单
打包
卷轴
部分别名
IPD60R380P6 SP001135814
商品名
酷摩
包装盒
TO-252-3
技术
硅
通道数
1 Channel
晶体管型
1 N-Channel
Vds-漏-源-击穿电压
600 V
晶体管极性
N通道
Tags
IPD60R380P, IPD60R380, IPD60R38, IPD60R3, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
***ure Electronics
N-Channel 6000 V 380 mOhm 19 nC CoolMOS™ P6 Power Transistor - DPAK-3
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO252-3, RoHS
***nell
MOSFET, N-CH, 600V, 10.6A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10.6A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.342ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:83W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPD60R380P6ATMA1
DISTI # V72:2272_06383827		Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		2500
  • 1:$0.7549
IPD60R380P6ATMA1
DISTI # V36:1790_06383827		Infineon Technologies AGTrans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant		0
  • 2500:$0.7213
IPD60R380P6ATMA1
DISTI # IPD60R380P6ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V DPAK-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.7120
  • 5000:$0.7273
  • 2500:$0.7553
IPD60R380P6ATMA1
DISTI # IPD60R380P6ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 600V DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8356
  • 500:$1.0084
  • 100:$1.2274
  • 10:$1.5270
  • 1:$1.7000
IPD60R380P6ATMA1
DISTI # IPD60R380P6ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 600V DPAK-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8356
  • 500:$1.0084
  • 100:$1.2274
  • 10:$1.5270
  • 1:$1.7000
IPD60R380P6ATMA1
DISTI # IPD60R380P6ATMA1		Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R380P6ATMA1)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.6459
  • 15000:$0.6569
  • 10000:$0.6799
  • 5000:$0.7059
  • 2500:$0.7319
IPD60R380P6ATMA1
DISTI # SP001135814		Infineon Technologies AGTrans MOSFET N-CH 600(Min)V 10.6A 3-Pin TO-252 T/R (Alt: SP001135814)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.6049
  • 15000:€0.6509
  • 10000:€0.7049
  • 5000:€0.7699
  • 2500:€0.9409
IPD60R380P6ATMA1
DISTI # 34AC1680		Infineon Technologies AGMOSFET, N-CH, 600V, 10.6A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:10.6A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.342ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes0
  • 1000:$0.7450
  • 500:$0.9000
  • 250:$0.9600
  • 100:$1.0200
  • 50:$1.1100
  • 25:$1.2000
  • 10:$1.2800
  • 1:$1.5000
IPD60R380P6ATMA1
DISTI # 726-IPD60R380P6ATMA1		Infineon Technologies AGMOSFET N-Ch 600V 10.6A DPAK-2
RoHS: Compliant		135
  • 1:$1.4900
  • 10:$1.2700
  • 100:$1.0100
  • 500:$0.8910
  • 1000:$0.7380
IPD60R380P6ATMA1
DISTI # 2781169		Infineon Technologies AGMOSFET, N-CH, 600V, 10.6A, TO-252
RoHS: Compliant		0
  • 5000:$1.0400
  • 1000:$1.1000
  • 500:$1.1600
  • 250:$1.3400
  • 100:$1.5900
  • 25:$1.9400
  • 5:$2.2300
IPD60R380P6ATMA1
DISTI # 2781169		Infineon Technologies AGMOSFET, N-CH, 600V, 10.6A, TO-2520
  • 100:£0.9730
  • 25:£1.2200
  • 5:£1.3500
图片 型号 描述
IPD60R380P6ATMA1

Mfr.#: IPD60R380P6ATMA1

OMO.#: OMO-IPD60R380P6ATMA1

 MOSFET N-Ch 600V 10.6A DPAK-2
IPD60R380C6

Mfr.#: IPD60R380C6

OMO.#: OMO-IPD60R380C6

 MOSFET N-Ch 600V 10.6A DPAK-2
IPD60R380C6ATMA1

Mfr.#: IPD60R380C6ATMA1

OMO.#: OMO-IPD60R380C6ATMA1

 MOSFET N-Ch 600V 10.6A DPAK-2
IPD60R385CPATMA1

Mfr.#: IPD60R385CPATMA1

OMO.#: OMO-IPD60R385CPATMA1

 MOSFET N-Ch 600V 9A DPAK-2
IPD60R385CPBTMA1

Mfr.#: IPD60R385CPBTMA1

OMO.#: OMO-IPD60R385CPBTMA1

 MOSFET N-Ch 600V 9A DPAK-2 CoolMOS CP
IPD60R380C6,6R6380

Mfr.#: IPD60R380C6,6R6380

OMO.#: OMO-IPD60R380C6-6R6380-1190

 全新原装
IPD60R380E6

Mfr.#: IPD60R380E6

OMO.#: OMO-IPD60R380E6-1190

 MOSFET N-Ch 650V 10.6A DPAK-2
IPD60R380E6BTMA1

Mfr.#: IPD60R380E6BTMA1

OMO.#: OMO-IPD60R380E6BTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-Ch 650V 10.6A DPAK-2
IPD60R385CPATMA1

Mfr.#: IPD60R385CPATMA1

OMO.#: OMO-IPD60R385CPATMA1-INFINEON-TECHNOLOGIES

 RF Bipolar Transistors MOSFET N-Ch 600V 9A DPAK-2
IPD60R380P6BTMA1

Mfr.#: IPD60R380P6BTMA1

OMO.#: OMO-IPD60R380P6BTMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 600V 3TO252
可用性
库存:
Available
订购:
5500
输入数量:
IPD60R380P6ATMA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$0.97
US$0.97
10
US$0.92
US$9.20
100
US$0.87
US$87.20
500
US$0.82
US$411.75
1000
US$0.78
US$775.10
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
从...开始
最新产品
More Newest Products
Top