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IRF630NPBF

IRF630NPBF
Mfr. #:
IRF630NPBF
制造商:
Infineon Technologies
描述:
MOSFET N-CH 200V 9.3A TO-220AB
生命周期:
制造商新产品。
数据表:
IRF630NPBF 数据表
交货:
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ECAD Model:
更多信息:
IRF630NPBF 更多信息
产品属性
属性值
制造商
红外线
产品分类
FET - 单
打包
管子
单位重量
0.211644 oz
安装方式
通孔
包装盒
TO-220-3
技术
硅
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
82 W
最高工作温度
+ 175 C
最低工作温度
- 55 C
秋季时间
15 ns
上升时间
14 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
9.3 A
Vds-漏-源-击穿电压
200 V
Rds-On-Drain-Source-Resistance
300 mOhms
晶体管极性
N通道
典型关断延迟时间
27 ns
典型开启延迟时间
7.9 ns
Qg-门电荷
23.3 nC
正向跨导最小值
4.9 S
通道模式
增强
Tags
IRF630NP, IRF630N, IRF630, IRF63, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
型号 制造商 描述 库存 价格
IRF630NPBF
DISTI # V36:1790_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # V99:2348_13890561		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 10:$0.6250
  • 1:$0.7082
IRF630NPBF
DISTI # IRF630NPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 9.3A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		639In Stock
  • 1000:$0.4125
  • 500:$0.5225
  • 100:$0.6738
  • 10:$0.8530
  • 1:$0.9600
IRF630NPBF
DISTI # 21061767		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		11530
  • 1000:$0.3004
  • 500:$0.3445
  • 100:$0.3877
IRF630NPBF
DISTI # 27128682		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		2946
  • 1000:$0.3602
  • 500:$0.4242
  • 100:$0.4979
  • 25:$0.6250
IRF630NPBF
DISTI # 30349950		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		707
  • 500:$0.4242
  • 100:$0.4979
  • 23:$0.6250
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 1317
  • 1:$0.4849
  • 10:$0.4569
  • 25:$0.4559
  • 50:$0.4539
  • 100:$0.4039
  • 500:$0.3589
  • 1000:$0.3129
IRF630NPBF
DISTI # IRF630NPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: IRF630NPBF)
RoHS: Compliant
Min Qty: 1000		Asia - 0
    IRF630NPBF
    DISTI # SP001564792    		Infineon Technologies AGTrans MOSFET N-CH 200V 9.3A 3-Pin(3+Tab) TO-220AB (Alt: SP001564792)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1:€0.4839
    • 10:€0.4519
    • 25:€0.4509
    • 50:€0.4499
    • 100:€0.3989
    • 500:€0.3479
    • 1000:€0.3159
    IRF630NPBF
    DISTI # 63J7338    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes355
    • 1:$1.0000
    • 10:$0.8600
    • 100:$0.6750
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF.
    DISTI # 26AC0605    		Infineon Technologies AGN CHANNEL MOSFET, 200V, 9.3A, TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes0
    • 1:$1.0200
    • 10:$0.8770
    • 100:$0.6890
    • 500:$0.6040
    • 1000:$0.4900
    • 2500:$0.4420
    • 10000:$0.4270
    IRF630NPBF
    DISTI # 70017265    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.3Ohm,ID 9.3A,TO-220AB,PD 82W,VGS +/-20V
    RoHS: Compliant    		194
    • 1:$0.8450
    • 10:$0.7450
    • 100:$0.6500
    • 500:$0.5630
    • 1000:$0.4970
    IRF630NPBF
    DISTI # 942-IRF630NPBF    		Infineon Technologies AGMOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
    RoHS: Compliant    		6088
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 2000:$0.3330
    IRF630NPBFInfineon Technologies AGPower Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		45
    • 1000:$0.2900
    • 500:$0.3100
    • 100:$0.3200
    • 25:$0.3300
    • 1:$0.3600
    IRF630NPBFInfineon Technologies AGSingle N-Channel 200 V 0.3 Ohm 35 nC HEXFET Power Mosfet - TO-220-3
    RoHS: Compliant    		10757Tube
    • 30:$0.3850
    • 300:$0.3450
    • 1750:$0.2950
    IRF630NPBF
    DISTI # 5430068    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, EA4885
    • 1:£2.0000
    • 20:£0.4300
    • 25:£0.4000
    IRF630NPBF
    DISTI # 9195025    		Infineon Technologies AGMOSFET N-CHANNEL 200V 9.3A TO220AB, TU450
    • 50:£0.4440
    • 250:£0.3770
    • 1000:£0.2970
    • 2500:£0.2640
    IRF630NPBFInternational Rectifier9.3A, 200V, 0.3OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB29
    • 28:$0.5000
    • 6:$0.7500
    • 1:$1.0000
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGTransistor: N-MOSFET,unipolar,200V,9.5A,82W,TO220AB807
    • 1:$0.7900
    • 3:$0.5240
    • 10:$0.4217
    • 100:$0.3603
    IRF630NPBF
    DISTI # IRF630NPBF    		Infineon Technologies AGN-Ch 200V 9,3A 82W 0,3R TO220AB
    RoHS: Compliant    		3000
    • 10:€0.5880
    • 50:€0.3480
    • 200:€0.2880
    • 500:€0.2775
    IRF630NPBFInfineon Technologies AGINSTOCK1748
      IRF630NPBF
      DISTI # XSLY00000000764      		INFINEON/IRTO-220AB
      RoHS: Compliant      		14076
      • 2350:$0.3029
      • 14076:$0.2827
      IRF630NPBF
      DISTI # XSFP00000008771      		Infineon Technologies AGPower Field-Effect Transistor, 13AI(D),30V,0.011ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA
      RoHS: Compliant      		8518
      • 300:$0.5133
      • 8518:$0.4812
      IRF630NPBF
      DISTI # C1S322000599628      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3033
      • 1000:$0.3602
      • 500:$0.4242
      • 100:$0.4979
      • 10:$0.6250
      IRF630NPBF
      DISTI # C1S327400157735      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		3950
      • 100:$0.6930
      • 50:$0.7940
      • 10:$1.1800
      • 5:$1.3800
      IRF630NPBF
      DISTI # C1S322000481417      		Infineon Technologies AGTrans MOSFET N-CH Si 200V 9.3A 3-Pin(3+Tab) TO-220AB Tube
      RoHS: Compliant      		11530
      • 1000:$0.4610
      • 500:$0.5020
      • 100:$0.6110
      • 50:$0.6850
      • 25:$0.7540
      • 5:$1.8800
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2509
      • 5:£0.4390
      • 25:£0.4080
      • 100:£0.3970
      • 250:£0.3850
      • 500:£0.3270
      IRF630NPBFInfineon Technologies AG200V,300m,9.3A,N-Channel Power MOSFET800
      • 1:$0.5800
      • 100:$0.4900
      • 500:$0.4300
      • 1000:$0.4200
      IRF630NPBF
      DISTI # 8648344      		Infineon Technologies AGMOSFET, N, 200V, 9.5A, TO-220
      RoHS: Compliant      		2794
      • 1:$1.3800
      • 10:$1.1800
      • 100:$0.8990
      • 500:$0.7950
      • 1000:$0.6270
      • 2000:$0.5570
      图片 型号 描述
      IRF634STRRPBF

      Mfr.#: IRF634STRRPBF

      OMO.#: OMO-IRF634STRRPBF

      		 MOSFET N-Chan 250V 8.1 Amp
      IRF630NSTRRPBF

      Mfr.#: IRF630NSTRRPBF

      OMO.#: OMO-IRF630NSTRRPBF

      		 MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      IRF634B-FP001

      Mfr.#: IRF634B-FP001

      OMO.#: OMO-IRF634B-FP001-ON-SEMICONDUCTOR

      		 MOSFET N-CH 250V 8.1A TO-220
      IRF630NSTRR

      Mfr.#: IRF630NSTRR

      OMO.#: OMO-IRF630NSTRR-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 200V 9.3A D2PAK
      IRF630STRPBF

      Mfr.#: IRF630STRPBF

      OMO.#: OMO-IRF630STRPBF-1190

      		 全新原装
      IRF633A

      Mfr.#: IRF633A

      OMO.#: OMO-IRF633A-1190

      		 全新原装
      IRF634B,IRF634A

      Mfr.#: IRF634B,IRF634A

      OMO.#: OMO-IRF634B-IRF634A-1190

      		 全新原装
      IRF634B,IRF634FP,IRF640,

      Mfr.#: IRF634B,IRF634FP,IRF640,

      OMO.#: OMO-IRF634B-IRF634FP-IRF640--1190

      		 全新原装
      IRF630NSPBF

      Mfr.#: IRF630NSPBF

      OMO.#: OMO-IRF630NSPBF-INFINEON-TECHNOLOGIES

      		 Darlington Transistors MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
      IRF630STRRPBF

      Mfr.#: IRF630STRRPBF

      OMO.#: OMO-IRF630STRRPBF-VISHAY

      		 IGBT Transistors MOSFET N-Chan 200V 9.0 Amp
      可用性
      库存:
      Available
      订购:
      4500
      输入数量:
      IRF630NPBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$0.38
      US$0.38
      10
      US$0.36
      US$3.56
      100
      US$0.34
      US$33.75
      500
      US$0.32
      US$159.40
      1000
      US$0.30
      US$300.00
      从...开始
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