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GA20JT12-263

GA20JT12-263
Mfr. #:
GA20JT12-263
制造商:
GeneSiC Semiconductor
描述:
TRANS SJT 1200V 45A
生命周期:
制造商新产品。
数据表:
GA20JT12-263 数据表
交货:
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ECAD Model:
更多信息:
GA20JT12-263 更多信息
产品属性
属性值
制造商
GeneSiC半导体
产品分类
晶体管 - FET、MOSFET - 单
系列
GA20JT12
打包
卷轴
单位重量
0.056438 oz
安装方式
贴片/贴片
包装盒
TO-263-7
技术
碳化硅
钯功耗
282 W
秋季时间
15 ns
上升时间
12 ns
VGS-栅极-源极-电压
3.44 V
Id 连续漏极电流
45 A
Vds-漏-源-击穿电压
1200 V
Rds-On-Drain-Source-Resistance
50 mOhms
晶体管极性
N通道
典型关断延迟时间
25 ns
典型开启延迟时间
15 ns
Qg-门电荷
104 nC
通道模式
增强
Tags
GA20, GA2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
SIC JUNCTION TRANS, 1.2KV, 20A, TO-263
***i-Key
TRANS SJT 1200V 45A
GA20JT12 SiC Carbide Junction Transistors
GeneSiC GA20JT12 SiC Carbide Junction Transistors (SJT) are "Super-High" current gain SiC BJTs developed in 1200V to 10kV ratings. These SJTs are normally-off, compatible with standard MOSFET/IGBT drivers, and have the best temperature-independent switching and blocking performance. The GA20JT12 transistors operate at 175ºC (maximum), provide excellent gain linearity and low output capacitance. Features include gate oxide free SiC switch, optional gate return pin, and suitability for connecting an anti-parallel diode. The GA20JT12 advantages are >20µs short-circuit withstand capability and high amplifier bandwidth. Applications include down-hole oil drilling, motor drives, solar inverters, and induction heating.Learn more
型号 制造商 描述 库存 价格
GA20JT12-263
DISTI # 1242-1189-ND		GeneSic Semiconductor IncTRANS SJT 1200V 45A
RoHS: Compliant
Min Qty: 1
Container: Tube		252In Stock
  • 100:$31.8388
  • 50:$34.2570
  • 10:$37.2800
  • 1:$40.3000
GA20JT12-263
DISTI # 905-GA20JT12-263		GeneSic Semiconductor IncMOSFET 1200V 45A Standard
RoHS: Compliant		26
  • 1:$35.9200
  • 5:$34.1500
  • 10:$33.2300
  • 25:$32.3100
  • 50:$30.5400
  • 100:$28.3800
  • 250:$26.0500
图片 型号 描述
GA20JT12-263

Mfr.#: GA20JT12-263

OMO.#: OMO-GA20JT12-263

 MOSFET 1200V 45A Standard
GA20JT12-247

Mfr.#: GA20JT12-247

OMO.#: OMO-GA20JT12-247

 MOSFET 1200V 45A Standard
GA20JT12-247

Mfr.#: GA20JT12-247

OMO.#: OMO-GA20JT12-247-GENESIC-SEMICONDUCTOR

 TRANS SJT 1.2KV 20A
GA20JT12-263

Mfr.#: GA20JT12-263

OMO.#: OMO-GA20JT12-263-GENESIC-SEMICONDUCTOR

 TRANS SJT 1200V 45A
可用性
库存:
Available
订购:
4000
输入数量:
GA20JT12-263的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$39.08
US$39.08
10
US$37.12
US$371.21
100
US$35.17
US$3 516.75
500
US$33.21
US$16 606.90
1000
US$31.26
US$31 260.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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