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CSD19506KCS

CSD19506KCS
Mfr. #:
CSD19506KCS
描述:
MOSFET 80V N-CH Power MOSFET
生命周期:
制造商新产品。
数据表:
CSD19506KCS 数据表
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更多信息:
CSD19506KCS 更多信息 CSD19506KCS Product Details
产品属性
属性值
制造商：
德州仪器
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
80 V
Id - 连续漏极电流：
200 A
Rds On - 漏源电阻：
2.3 mOhms
Vgs th - 栅源阈值电压：
2.5 V
Vgs - 栅源电压：
20 V
Qg - 门电荷：
120 nC
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
Pd - 功耗：
375 W
配置：
单身的
商品名：
场效应管
打包：
管子
高度：
16.51 mm
长度：
10.67 mm
系列：
CSD19506KCS
晶体管类型：
1 N-Channel
宽度：
4.7 mm
品牌：
德州仪器
正向跨导 - 最小值：
297 S
秋季时间：
10 ns
产品类别：
MOSFET
上升时间：
11 ns
出厂包装数量：
50
子类别：
MOSFET
典型关断延迟时间：
30 ns
典型的开启延迟时间：
19 ns
单位重量：
0.211644 oz
Tags
CSD19506, CSD1950, CSD19, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***as Instruments
80-V, N channel NexFET™ power MOSFET, single TO-220, 2.3 mOhm 3-TO-220 -55 to 175
***ow.cn
Trans MOSFET N-CH Si 80V 150A 3-Pin(3+Tab) TO-220 Tube
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Stop Electro
Power Field-Effect Transistor, 100A I(D), 80V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
*** Source Electronics
80V N-Channel NexFET Power MOSFETs
***ark
Mosfet, N Channel, 80V, 100A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.002Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes
***ical
Trans MOSFET N-CH Si 80V 223A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
N-Channel 80 V 2.7 mOhm 178 nC Flange Mount Power Trench Mosfet - TO-220
***emi
N-Channel PowerTrench® MOSFET 80V, 223A, 2.7mΩ
***r Electronics
Power Field-Effect Transistor, 120A I(D), 80V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ineon SCT
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
***ark
Mosfet, N-Ch, 80V, 120A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.002Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***ineon SCT
Trans MOSFET N-CH 100V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
***ure Electronics
Single N-Channel 100 V 2.3 mOhm 168 nC OptiMOS™ Power Mosfet - TO-220-3
***nell
MOSFET, N-CH, 100V, 120A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.002ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
***ineon
OptiMOS 5 100V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 100V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 43% from previous generation | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***emi
N-Channel PowerTrench® MOSFET 60V, 313A, 2mΩ
***ical
Trans MOSFET N-CH 60V 313A 3-Pin(3+Tab) TO-220 Tube
***ure Electronics
FDP020N06B Series 60 V 313 A 2 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***r Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***el Electronic
PMIC - Voltage Regulators - Linear Tape & Reel (TR) 3 (168 Hours) SC-74A, SOT-753 Fixed 1 RICHTEK RT9198-33GBRFixed LDO Voltage Regulator, 2.5V to 5.5V, 220mV Dropout, 3.3Vout, 300mAout, SOT-23-5
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***ineon SCT
Trans MOSFET N-CH 80V 120A Automotive 3-Pin(3+Tab) TO-220 Tube, PG-TO220-3, RoHS
***el Electronic
MOSFET N-Ch 80V 120A TO220-3
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
***emi
N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ
***Yang
Trans MOSFET N-CH 60V 14A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***inecomponents.com
60V, 80A, 6m ohom ,NCH LOGIC LEVEL POWER TRENCH MOSFET
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:242mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:242mW; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V
***AS INSTRUMENTS INC
This 80 V, 2.0 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型号 描述 库存 价格
CSD19506KCS
DISTI # 296-37169-5-ND		MOSFET N-CH 80V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		4315In Stock
  • 1000:$2.5395
  • 500:$3.0111
  • 100:$3.7185
  • 50:$4.0812
  • 10:$4.5350
  • 1:$5.0800
CSD19506KCS
DISTI # CSD19506KCS		Trans MOSFET N-CH 80V 273A 3-Pin TO-220 Tube - Rail/Tube (Alt: CSD19506KCS)
RoHS: Compliant
Min Qty: 200
Container: Tube		Americas - 0
  • 200:$2.2900
  • 300:$2.1900
  • 500:$2.1900
  • 1000:$2.0900
  • 2000:$1.9900
CSD19506KCS
DISTI # 28X4988		TRANSISTOR, MOSFET, N CHANNEL, 80V, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes209
  • 1:$4.3700
  • 10:$3.9300
  • 25:$3.6900
  • 50:$3.4500
  • 100:$3.2100
  • 250:$3.0100
  • 500:$2.7300
CSD19506KCS80V, N-Channel NexFET&#153,Power MOSFET4236
  • 1000:$1.8700
  • 750:$1.9100
  • 500:$2.2100
  • 250:$2.5400
  • 100:$2.7200
  • 25:$3.0300
  • 10:$3.2500
  • 1:$3.6100
CSD19506KCS
DISTI # 595-CSD19506KCS		MOSFET 80V N-CH Power MOSFET
RoHS: Compliant		491
  • 1:$4.3700
  • 10:$3.9300
  • 100:$3.2100
  • 250:$3.0100
  • 500:$2.7300
CSD19506KCS
DISTI # 8274903		MOSFET N-CHANNEL 80V 100A NEXFET TO-220, EA130
  • 1:£3.9500
  • 50:£2.8600
  • 100:£2.7900
  • 250:£2.6400
  • 500:£2.4000
CSD19506KCS
DISTI # 8274903P		MOSFET N-CHANNEL 80V 100A NEXFET TO-220, TU399
  • 50:£2.8600
  • 100:£2.7900
  • 250:£2.6400
  • 500:£2.4000
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可用性
库存:
232
订购:
2215
输入数量:
CSD19506KCS的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$4.37
US$4.37
10
US$3.93
US$39.30
100
US$3.21
US$321.00
250
US$3.01
US$752.50
500
US$2.73
US$1 365.00
1000
US$2.30
US$2 300.00
2500
US$2.19
US$5 475.00
5000
US$2.11
US$10 550.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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