CGHV1J006D-GP4

CGHV1J006D-GP4
Mfr. #:
CGHV1J006D-GP4
制造商:
N/A
描述:
RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
生命周期:
制造商新产品。
数据表:
CGHV1J006D-GP4 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
更多信息:
CGHV1J006D-GP4 更多信息
产品属性
属性值
制造商:
克里公司
产品分类:
射频 JFET 晶体管
RoHS:
Y
晶体管类型:
HEMT
技术:
氮化镓
获得:
17 dB
晶体管极性:
N通道
Vds - 漏源击穿电压:
100 V
Vgs - 栅源击穿电压:
- 10 V to 2 V
Id - 连续漏极电流:
0.8 A
输出功率:
6 W
最大漏栅电压:
-
最低工作温度:
-
最高工作温度:
-
Pd - 功耗:
-
安装方式:
贴片/贴片
包装/案例:
打包:
凝胶包
应用:
-
配置:
单身的
高度:
100 um
长度:
840 um
工作频率:
10 MHz to 18 GHz
工作温度范围:
-
产品:
氮化镓 HEMT
宽度:
800 um
品牌:
Wolfspeed / 克里
栅源截止电压:
-
班级:
-
开发套件:
-
秋季时间:
-
NF - 噪声系数:
-
P1dB - 压缩点:
-
产品类别:
射频 JFET 晶体管
Rds On - 漏源电阻:
2.3 Ohms
上升时间:
-
出厂包装数量:
10
子类别:
晶体管
典型关断延迟时间:
-
Vgs th - 栅源阈值电压:
- 3 V
Tags
CGHV1J, CGHV1, CGHV, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***fspeed SCT
Aerospace & Defense, 40 V, 18 GHz, 6W, Die, RoHS
***i-Key
RF MOSFET HEMT 40V DIE
***fspeed
6-W; 18.0-GHz; GaN HEMT Die
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
型号 制造商 描述 库存 价格
CGHV1J006D-GP4
DISTI # CGHV1J006D-GP4-ND
WolfspeedRF MOSFET HEMT 40V DIE
RoHS: Compliant
Min Qty: 10
Container: Tray
30In Stock
  • 10:$28.4500
CGHV1J006D-GP4
DISTI # 941-CGHV1J006D
Cree, Inc.RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
RoHS: Compliant
100
  • 10:$31.9200
CGHV1J006D-GP4
DISTI # CGHV1J006D-GP4
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
0
  • 50:$29.7400
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Mfr.#: CGHV1J070D-GP4

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CGHV60040D

Mfr.#: CGHV60040D

OMO.#: OMO-CGHV60040D

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CGH60030D-GP4

Mfr.#: CGH60030D-GP4

OMO.#: OMO-CGH60030D-GP4

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CGA2B3X7R1H104K050BE

Mfr.#: CGA2B3X7R1H104K050BE

OMO.#: OMO-CGA2B3X7R1H104K050BE

Multilayer Ceramic Capacitors MLCC - SMD/SMT SOFT 0402 50V 0.1uF X7R 10% AEC-Q200
44531

Mfr.#: 44531

OMO.#: OMO-44531-WIHA

Tweezers, ESD Safe, 1 SA-120mm
CG2H40025F

Mfr.#: CG2H40025F

OMO.#: OMO-CG2H40025F-WOLFSPEED

RF MOSFET HEMT 28V 440166
CGH60030D-GP4

Mfr.#: CGH60030D-GP4

OMO.#: OMO-CGH60030D-GP4-WOLFSPEED

RF MOSFET HEMT 28V DIE
TW-E41-102B

Mfr.#: TW-E41-102B

OMO.#: OMO-TW-E41-102B-TWIN-INDUSTRIES

Protoboard, Solderless, Board 6.5"Lx2.14"W, 2 Dis-Strips, 3 Posts, 1 Term-Strips
可用性
库存:
100
订购:
2083
输入数量:
CGHV1J006D-GP4的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
10
US$31.92
US$319.20
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