CSD18531Q5AT

CSD18531Q5AT
Mfr. #:
CSD18531Q5AT
描述:
MOSFET N-CH 60V 100A 8SON
生命周期:
制造商新产品。
数据表:
CSD18531Q5AT 数据表
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CSD18531Q5AT 更多信息 CSD18531Q5AT Product Details
产品属性
属性值
制造商
德州仪器
产品分类
晶体管 - FET、MOSFET - 单
系列
CSD18531Q5A
打包
卷轴
单位重量
0.000847 oz
安装方式
贴片/贴片
商品名
场效应管
包装盒
VSON-8
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
156 W
最高工作温度
+ 150 C
最低工作温度
- 55 C
秋季时间
2.7 ns
上升时间
7.8 ns
VGS-栅极-源极-电压
20 V
Id 连续漏极电流
134 A
Vds-漏-源-击穿电压
60 V
VGS-th-Gate-Source-Threshold-Voltage
1.5 V
Rds-On-Drain-Source-Resistance
5.8 mOhms
晶体管极性
N通道
典型关断延迟时间
20 ns
典型开启延迟时间
4.4 ns
Qg-门电荷
36 nC
通道模式
增强
Tags
CSD1853, CSD185, CSD18, CSD1, CSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
NexFET N-Channel Power MOSFETs
OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
TI N-Channel 8-23-12
NexFET™ Power MOSFETs
OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
型号 描述 库存 价格
CSD18531Q5AT
DISTI # V72:2272_07248826
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
RoHS: Compliant
108
  • 100:$1.1156
  • 25:$1.2610
  • 10:$1.4012
  • 1:$1.8110
CSD18531Q5AT
DISTI # V36:1790_07248826
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
RoHS: Compliant
0
  • 250000:$0.7292
  • 125000:$0.7296
  • 25000:$0.7831
  • 2500:$0.8895
  • 250:$0.9079
CSD18531Q5AT
DISTI # V39:1801_07248826
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
RoHS: Compliant
0
  • 250000:$0.7292
  • 125000:$0.7296
  • 25000:$0.7831
  • 2500:$0.8895
  • 250:$0.9079
CSD18531Q5AT
DISTI # 296-41958-1-ND
MOSFET N-CH 60V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2771In Stock
  • 100:$1.3734
  • 10:$1.7090
  • 1:$1.9000
CSD18531Q5AT
DISTI # 296-41958-6-ND
MOSFET N-CH 60V 100A 8SON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2771In Stock
  • 100:$1.3734
  • 10:$1.7090
  • 1:$1.9000
CSD18531Q5AT
DISTI # 296-41958-2-ND
MOSFET N-CH 60V 100A 8SON
RoHS: Compliant
Min Qty: 250
Container: Tape & Reel (TR)
2750In Stock
  • 1250:$0.9077
  • 500:$1.0955
  • 250:$1.2520
CSD18531Q5AT
DISTI # 32428240
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
RoHS: Compliant
108
  • 8:$1.8110
CSD18531Q5AT
DISTI # CSD18531Q5AT
Trans MOSFET N-CH 60V 134A 8-Pin VSONP T/R - Tape and Reel (Alt: CSD18531Q5AT)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$0.7849
  • 2500:$0.8069
  • 1500:$0.8349
  • 1000:$0.8639
  • 500:$0.9079
CSD18531Q5AT
DISTI # CSD18531Q5AT
Trans MOSFET N-CH 60V 134A 8-Pin VSONP T/R (Alt: CSD18531Q5AT)
RoHS: Compliant
Min Qty: 250
Container: Tape and Reel
Europe - 0
  • 2500:€0.7629
  • 1500:€0.7999
  • 1000:€0.8419
  • 500:€0.9399
  • 250:€1.0619
CSD18531Q5AT60V, N ch NexFET MOSFET™, single SON5x6, 4.6mOhm15322
  • 1000:$0.7100
  • 750:$0.7800
  • 500:$0.9500
  • 250:$1.1300
  • 100:$1.2200
  • 25:$1.4000
  • 10:$1.5100
  • 1:$1.6800
CSD18531Q5A
DISTI # 595-CSD18531Q5A
MOSFET 60V N-Channel NexFET Power MOSFET
RoHS: Compliant
13876
  • 1:$1.6500
  • 10:$1.4000
  • 100:$1.1200
  • 500:$0.9810
  • 1000:$0.8130
  • 2500:$0.7570
  • 5000:$0.7290
  • 10000:$0.7010
CSD18531Q5AT
DISTI # 595-CSD18531Q5AT
MOSFET 60V N-channel NexFET Power MOSFET
RoHS: Compliant
670
  • 1:$1.8400
  • 10:$1.5700
  • 100:$1.2500
  • 250:$1.2500
  • 500:$1.0900
  • 1000:$0.9070
  • 2500:$0.8450
  • 5000:$0.8130
  • 10000:$0.7820
CSD18531Q5AT
DISTI # CSD18531Q5AT
Transistor: N-MOSFET,unipolar,60V,100A,156W,VSONP8 5x6mm168
  • 3:$1.5500
  • 1:$1.7200
CSD18531Q5AT
DISTI # C1S746203847696
MOSFETs
RoHS: Compliant
1
  • 1:$1.7700
图片 型号 描述
CSD18504Q5A

Mfr.#: CSD18504Q5A

OMO.#: OMO-CSD18504Q5A

MOSFET 40V N-Channel NexFET Power MOSFET
CSD18531Q5A

Mfr.#: CSD18531Q5A

OMO.#: OMO-CSD18531Q5A

MOSFET 60V N-Channel NexFET Power MOSFET
CSD18503Q5A

Mfr.#: CSD18503Q5A

OMO.#: OMO-CSD18503Q5A

MOSFET 40V N-Channel NexFET Power MOSFET
CSD18503Q5AT

Mfr.#: CSD18503Q5AT

OMO.#: OMO-CSD18503Q5AT

MOSFET 40V CSD18503Q5A 8-VSONP
CSD18536KTTT

Mfr.#: CSD18536KTTT

OMO.#: OMO-CSD18536KTTT

MOSFET 60V, N ch NexFET MOSFETG , single D2PAK, 1.6mOhm 3-DDPAK/TO-263 -55 to 175
CSD18502Q5BT

Mfr.#: CSD18502Q5BT

OMO.#: OMO-CSD18502Q5BT

MOSFET 40V, N ch NexFET MOSFETG , single SON5x6, 2.3mOhm 8-VSON-CLIP -55 to 150
CSD18511KCS

Mfr.#: CSD18511KCS

OMO.#: OMO-CSD18511KCS

MOSFET 40V, N ch NexFET MOSFETG , single TO-220, 2.6mOhm 3-TO-220 -55 to 175
CSD18533Q

Mfr.#: CSD18533Q

OMO.#: OMO-CSD18533Q-TEXAS-INSTRUMENTS

全新原装
CSD18511KTT

Mfr.#: CSD18511KTT

OMO.#: OMO-CSD18511KTT-TEXAS-INSTRUMENTS

GEN1.4 40V-20V
CSD18511Q5A

Mfr.#: CSD18511Q5A

OMO.#: OMO-CSD18511Q5A-TEXAS-INSTRUMENTS

40V N CH MOSFET
可用性
库存:
Available
订购:
1000
输入数量:
CSD18531Q5AT的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$1.06
US$1.06
10
US$1.01
US$10.07
100
US$0.95
US$95.43
500
US$0.90
US$450.65
1000
US$0.85
US$848.30
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