CSD85312Q3E

Mfr. #:: CSD85312Q3E
描述:: MOSFET 2N-CH 20V 39A 8VSON
生命周期:: 制造商新产品。
数据表:: CSD85312Q3E 数据表
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更多信息:: CSD85312Q3E 更多信息 CSD85312Q3E Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: FET - 阵列

系列: 场效应管

打包: Digi-ReelR 替代包装

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: 8-PowerVDFN

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 8-VSON (3.3x3.3)

配置: 双公共源

FET型: 2 N-Channel (Dual) Common Source

最大功率: 2.5W

晶体管型: 2 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 2390pF @ 10V

FET-Feature: Logic Level Gate, 5V Drive

Current-Continuous-Drain-Id-25°C: 39A

Rds-On-Max-Id-Vgs: 12.4 mOhm @ 10A, 8V

Vgs-th-Max-Id: 1.4V @ 250μA

栅极电荷-Qg-Vgs: 15.2nC @ 4.5V

钯功耗: 2.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 6 ns

上升时间: 27 ns

VGS-栅极-源极-电压: 10 V

Id 连续漏极电流: 76 A

Vds-漏-源-击穿电压: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 1.1 V

Rds-On-Drain-Source-Resistance: 14 mOhms

晶体管极性: N通道

典型关断延迟时间: 24 ns

典型开启延迟时间: 11 ns

Qg-门电荷: 11.7 nC

正向跨导最小值: 99 S

Tags: CSD85, CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD85312Q3E 描述

***as Instruments: 20V, N ch NexFET MOSFET™, dual common source SON3x3, 14mOhm 8-VSON -55 to 150

***ark: TRANSISTOR, MOSFET, N CHANNEL, 20V, 39A, SON8

***p One Stop Global: Trans MOSFET N-CH 20V 39A 8-Pin VSON EP T/R

***et Europe: Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R

***i-Key: MOSFET 2N-CH 20V 39A 8VSON

CSD85312Q3E 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD85312Q3E DISTI # 296-37187-1-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7848In Stock	1000:$0.4640 500:$0.5877 100:$0.7578 10:$0.9590 1:$1.0800
CSD85312Q3E DISTI # 296-37187-6-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7848In Stock	1000:$0.4640 500:$0.5877 100:$0.7578 10:$0.9590 1:$1.0800
CSD85312Q3E DISTI # 296-37187-2-ND	MOSFET 2N-CH 20V 39A 8VSON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.3844 5000:$0.3994 2500:$0.4204
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R - Tape and Reel (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	2500:$0.3559 5000:$0.3549 10000:$0.3539 15000:$0.3529 25000:$0.3529
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD85312Q3E DISTI # CSD85312Q3E	Trans MOSFET N-CH 20V 39A 8-Pin VSON T/R (Alt: CSD85312Q3E) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€0.5489 10:€0.4939 25:€0.4489 50:€0.4119 100:€0.3799 500:€0.3529 1000:€0.3289
CSD85312Q3E	Dual 20-V N-Channel NexFET&#153,Power MOSFETs, CSD85312Q3E	4740	1000:$0.3100 750:$0.3500 500:$0.4300 250:$0.5300 100:$0.5800 25:$0.6700 10:$0.7300 1:$0.8200
CSD85312Q3E	Power Field-Effect Transistor, 12A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	83400	1000:$0.3600 500:$0.3700 100:$0.3900 25:$0.4100 1:$0.4400
CSD85312Q3E DISTI # 595-CSD85312Q3E	MOSFET Dual 20V N-CH Pwr MOSFETs RoHS: Compliant	3104	1:$0.9000 10:$0.7700 100:$0.5870 500:$0.5190 1000:$0.4100 2500:$0.3640

图片	型号	描述
	Mfr.#: CSD85302L OMO.#: OMO-CSD85302L	MOSFET 20V Dual N ch MOSFET
	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E	MOSFET Dual 20V N-CH Pwr MOSFETs
	Mfr.#: CSD85301Q2 OMO.#: OMO-CSD85301Q2	MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
	Mfr.#: CSD85301Q2T OMO.#: OMO-CSD85301Q2T	MOSFET Dual N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD85302LT OMO.#: OMO-CSD85302LT	MOSFET 20V Dual N ch MOSFET
	Mfr.#: CSD85302LT OMO.#: OMO-CSD85302LT-TEXAS-INSTRUMENTS	MOSFET 2N-CH
	Mfr.#: CSD85301Q2T OMO.#: OMO-CSD85301Q2T-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET Dual N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD85301Q2 OMO.#: OMO-CSD85301Q2-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
	Mfr.#: CSD85302L OMO.#: OMO-CSD85302L-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 4-Pin PICOSTAR T/R
	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E-TEXAS-INSTRUMENTS	MOSFET 2N-CH 20V 39A 8VSON

CSD85312Q3E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes