CSD85301Q2T

Mfr. #:: CSD85301Q2T
描述:: IGBT Transistors MOSFET Dual N-Channel NexFET Pwr MOSFET
生命周期:: 制造商新产品。
数据表:: CSD85301Q2T 数据表
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更多信息:: CSD85301Q2T 更多信息 CSD85301Q2T Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: FET - 阵列

系列: 场效应管

打包: Digi-ReelR 替代包装

单位重量: 0.000342 oz

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: 6-WDFN Exposed Pad

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: 6-WSON (2x2)

配置: 双重的

FET型: 2 N-Channel (Dual)

最大功率: 2.3W

晶体管型: 2 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: 469pF @ 10V

FET-Feature: Logic Level Gate, 5V Drive

Current-Continuous-Drain-Id-25°C: 5A

Rds-On-Max-Id-Vgs: 27 mOhm @ 5A, 4.5V

Vgs-th-Max-Id: 1.2V @ 250μA

栅极电荷-Qg-Vgs: 5.4nC @ 4.5V

钯功耗: 2.3 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 15 ns

上升时间: 26 ns

VGS-栅极-源极-电压: 10 V

Id 连续漏极电流: 5 A

Vds-漏-源-击穿电压: 20 V

VGS-th-Gate-Source-Threshold-Voltage: 600 mV

Rds-On-Drain-Source-Resistance: 99 mOhms

晶体管极性: N通道

典型关断延迟时间: 14 ns

典型开启延迟时间: 6 ns

Qg-门电荷: 5.4 nC

Tags: CSD8530, CSD85, CSD8, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD85301Q2T 描述

***as Instruments: 20V, N ch NexFET MOSFET™, dual SON2x2, 27mOhm 6-WSON -55 to 150

***et: Trans MOSFET N-CH 20V 5A 6-Pin WSON T/R

***ical: Power MOSFET 6-Pin WSON EP T/R

***ark: Mosfet, Dual N-Ch, 20V, 5A, Wson-6; Transistor Polarity:dual N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.023Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv; Power Rohs Compliant: Yes

CSD85301Q2T 更多信息

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD85301Q2T DISTI # 296-38668-1-ND	MOSFET 2N-CH 20V 5A 6WSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3385In Stock	100:$0.4450 10:$0.5770 1:$0.6600
CSD85301Q2T DISTI # 296-38668-6-ND	MOSFET 2N-CH 20V 5A 6WSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3385In Stock	100:$0.4450 10:$0.5770 1:$0.6600
CSD85301Q2T DISTI # 296-38668-2-ND	MOSFET 2N-CH 20V 5A 6WSON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	3250In Stock	1250:$0.2560 750:$0.2800 500:$0.3200 250:$0.3760
CSD85301Q2T DISTI # CSD85301Q2T	Trans MOSFET N-CH 20V 5A 6-Pin WSON T/R - Tape and Reel (Alt: CSD85301Q2T) RoHS: Compliant Min Qty: 1750 Container: Reel	Americas - 0	1750:$0.2319 2250:$0.2199 4000:$0.2129 8750:$0.2059 17500:$0.1999
CSD85301Q2T DISTI # 45Y4802	Dual MOSFET, Dual N Channel, 5 A, 20 V, 0.023 ohm, 4.5 V, 900 mV RoHS Compliant: Yes	0	10:$0.3200 5:$0.4100 1:$0.5000
CSD85301Q2T	CSD85301Q2 Dual N-Channel NexFET&#153,Power MOSFET	3750	1000:$0.1800 750:$0.2000 500:$0.2500 250:$0.3100 100:$0.3400 25:$0.4000 10:$0.4300 1:$0.4800
CSD85301Q2 DISTI # 595-CSD85301Q2	MOSFET CSD85301Q2 Dual N- Channel Power MOSFET RoHS: Compliant	1984	1:$0.6100 10:$0.5000 100:$0.3060 1000:$0.2370 3000:$0.2020 9000:$0.1880 24000:$0.1780 45000:$0.1740
CSD85301Q2T DISTI # 595-CSD85301Q2T	MOSFET Dual N-Channel NexFET Pwr MOSFET RoHS: Compliant	1745	1:$0.6000 10:$0.5000 100:$0.3200 250:$0.3200 1000:$0.2560 2000:$0.2320 5000:$0.2160 10000:$0.2080 25000:$0.2000
CSD85301Q2T DISTI # 2470183	MOSFET, DUAL N-CH, 20V, 5A, WSON-6 RoHS: Compliant	2	500:£0.2410 250:£0.2430 100:£0.2440 25:£0.4030 5:£0.4280
CSD85301Q2T DISTI # 2470183RL	MOSFET, DUAL N-CH, 20V, 5A, WSON-6 RoHS: Compliant	0	10:$0.5070 250:$0.5070 1:$0.7920
CSD85301Q2T DISTI # 2470183	MOSFET, DUAL N-CH, 20V, 5A, WSON-6 RoHS: Compliant	2	10:$0.5070 250:$0.5070 1:$0.7920

图片	型号	描述
	Mfr.#: CSD85302L OMO.#: OMO-CSD85302L	MOSFET 20V Dual N ch MOSFET
	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E	MOSFET Dual 20V N-CH Pwr MOSFETs
	Mfr.#: CSD85301Q2 OMO.#: OMO-CSD85301Q2	MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
	Mfr.#: CSD85301Q2T OMO.#: OMO-CSD85301Q2T	MOSFET Dual N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD85302LT OMO.#: OMO-CSD85302LT	MOSFET 20V Dual N ch MOSFET
	Mfr.#: CSD85302LT OMO.#: OMO-CSD85302LT-TEXAS-INSTRUMENTS	MOSFET 2N-CH
	Mfr.#: CSD85301Q2T OMO.#: OMO-CSD85301Q2T-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET Dual N-Channel NexFET Pwr MOSFET
	Mfr.#: CSD85301Q2 OMO.#: OMO-CSD85301Q2-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET CSD85301Q2 Dual N- Channel Power MOSFET
	Mfr.#: CSD85302L OMO.#: OMO-CSD85302L-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 4-Pin PICOSTAR T/R
	Mfr.#: CSD85312Q3E OMO.#: OMO-CSD85312Q3E-TEXAS-INSTRUMENTS	MOSFET 2N-CH 20V 39A 8VSON

CSD85301Q2T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes