FGA6065ADF

FGA6065ADF
Mfr. #:
FGA6065ADF
制造商:
ON Semiconductor / Fairchild
描述:
IGBT Transistors 650V FS Gen3 Trench IGBT
生命周期:
制造商新产品。
数据表:
FGA6065ADF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
FGA6065ADF 更多信息
产品属性
属性值
制造商:
安森美半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-3PN
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
650 V
集电极-发射极饱和电压:
1.8 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
120 A
Pd - 功耗:
306 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
FGA6065ADF
打包:
管子
连续集电极电流 Ic 最大值:
60 A
品牌:
安森美半导体/飞兆半导体
栅极-发射极漏电流:
+/- 400 nA
产品类别:
IGBT晶体管
出厂包装数量:
450
子类别:
IGBT
单位重量:
0.225789 oz
Tags
FGA60, FGA6, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
***ark
650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
***rchild Semiconductor
This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.
***ical
Trans IGBT Chip N=-CH 650V 120A 306000mW 3-Pin(3+Tab) TO-3PN Rail
***emi
IGBT, 650 V, 60 A Field Stop Trench
***r Electronics
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors FS3TIGBT TO3PN 60A 650V
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for Welder applications where low conduction and switching losses are essential.
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***nell
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3P; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HB Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 650V, 120A, TO-247; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 469W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
***ronik
IGBT 650V 80A 1,8V TO247 long D
*** Electronic Components
IGBT Transistors IGBT & Power Bipolar
***DA Technology Co., Ltd.
Product Description Demo for Development.
*** Source Electronics
Trans IGBT Chip N-CH 650V 120A 600000mW 3-Pin(3+Tab) TO-3P Tube / IGBT 650V 120A 600W TO3P
***-Wing Technology
In a Tube of 30, ON Semiconductor FGA60N65SMD IGBT, 120 A 650 V, 3-Pin TO-3PN
***nell
IGBT, 650V, 120A, TO-3PN; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 600W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-3PN; No. of Pins: 3Pins;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 120A 395000mW 3-Pin(3+Tab) TO-247 Tube
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ark
Igbt, Single, 650V, 120A, To-247; Dc Collector Current:120A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:395W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGW75N65H5XKSA1
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGA6065ADF Field Stop Trench IGBT
ON Semiconductor FGA6065ADF Field Stop Trench IGBT is an adopted third generation IGBT with extreme low Rds(on). It has faster-switching characteristics for outstanding efficiency. It's fully optimized to a variety of PFC (Power Factor Correction) topology like single boost, multichannel interleaved and more with over 20KHz switching performance. The TO3P package provides Super Low thermal resistance for a much wider SOA for system stability.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
型号 制造商 描述 库存 价格
FGA6065ADF
DISTI # V99:2348_14141231
ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 1000:$2.8720
  • 500:$3.3150
  • 250:$3.7240
  • 100:$3.9650
  • 10:$4.6210
  • 1:$6.0203
FGA6065ADF
DISTI # FGA6065ADF-ND
ON SemiconductorIGBT 650V 120A 306W TO3P
RoHS: Compliant
Min Qty: 450
Container: Tube
Temporarily Out of Stock
  • 450:$1.9922
FGA6065ADF
DISTI # 30196974
ON Semiconductor650V FS GEN3 TRENCH IGBT450
  • 3:$6.0203
FGA6065ADF
DISTI # FGA6065ADF
ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube (Alt: FGA6065ADF)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 60
  • 1000:€1.1900
  • 100:€1.2900
  • 500:€1.2900
  • 50:€1.3900
  • 25:€1.4900
  • 10:€1.5900
  • 1:€1.7900
FGA6065ADF
DISTI # FGA6065ADF
ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Bulk (Alt: FGA6065ADF)
Min Qty: 108
Container: Bulk
Americas - 0
  • 1080:$2.7900
  • 324:$2.8900
  • 540:$2.8900
  • 108:$2.9900
  • 216:$2.9900
FGA6065ADF
DISTI # FGA6065ADF
ON SemiconductorTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3PN Tube - Rail/Tube (Alt: FGA6065ADF)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 2700:$1.1900
  • 4500:$1.1900
  • 450:$1.2900
  • 900:$1.2900
  • 1800:$1.2900
FGA6065ADF
DISTI # 01AC8666
ON SemiconductorFS3TIGBT TO3PN 60A 650V / TUBE0
  • 1000:$3.7200
  • 500:$3.9500
  • 250:$4.2400
  • 100:$4.6200
  • 1:$5.6200
FGA6065ADF
DISTI # 512-FGA6065ADF
ON SemiconductorIGBT Transistors 650V FS Gen3 Trench IGBT
RoHS: Compliant
1040
  • 1:$5.5100
  • 10:$4.6900
  • 100:$4.0600
  • 250:$3.8500
  • 500:$3.4600
  • 1000:$2.9100
  • 2500:$2.7700
FGA6065ADFFairchild Semiconductor Corporation 
RoHS: Not Compliant
403
  • 1000:$1.5000
  • 500:$1.5800
  • 100:$1.6400
  • 25:$1.7100
  • 1:$1.8500
FGA6065ADF
DISTI # XSKDRABV0037673
ON SEMICONDUCTOR 
RoHS: Compliant
360 in Stock0 on Order
  • 360:$1.9100
  • 244:$2.0500
图片 型号 描述
MBRF10100CTR

Mfr.#: MBRF10100CTR

OMO.#: OMO-MBRF10100CTR

Schottky Diodes & Rectifiers 2x 5A 100V Rectifier
STM32F030C6T6

Mfr.#: STM32F030C6T6

OMO.#: OMO-STM32F030C6T6

ARM Microcontrollers - MCU Value-Line ARM MCU 32kB 48 MHz
SG2524DR

Mfr.#: SG2524DR

OMO.#: OMO-SG2524DR

Switching Controllers PWM Ctlr
RAC05-12SK/480

Mfr.#: RAC05-12SK/480

OMO.#: OMO-RAC05-12SK-480

AC/DC Power Modules 5W 85-528Vin 12Vout 420mA
RAC05-12SK/480

Mfr.#: RAC05-12SK/480

OMO.#: OMO-RAC05-12SK-480-RECOM-POWER

5W AC/DC-Converter 'POWERLINE' 4kV reg
3522270KFT

Mfr.#: 3522270KFT

OMO.#: OMO-3522270KFT-TE-CONNECTIVITY-AMP

3522270KFT - Each
8PCV-02-006

Mfr.#: 8PCV-02-006

OMO.#: OMO-8PCV-02-006-TE-CONNECTIVITY

CONN BARRIER STRIP 2CIRC 0.438""
STM32F030C6T6

Mfr.#: STM32F030C6T6

OMO.#: OMO-STM32F030C6T6-STMICROELECTRONICS

IC MCU 32BIT 32KB FLASH 48LQFP
EEH-ZK1V101XP

Mfr.#: EEH-ZK1V101XP

OMO.#: OMO-EEH-ZK1V101XP-PANASONIC

CAP ALUM POLY 100UF 20% 35V SMD
EEH-ZK1V331P

Mfr.#: EEH-ZK1V331P

OMO.#: OMO-EEH-ZK1V331P-PANASONIC

Cap Aluminum Polymer Hybrid 330uF 35VDC 20% (10 X 10.2mm) SMD 0.02 Ohm 2800mA 4000h 125C
可用性
库存:
Available
订购:
1984
输入数量:
FGA6065ADF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$5.51
US$5.51
10
US$4.69
US$46.90
100
US$4.06
US$406.00
250
US$3.85
US$962.50
500
US$3.46
US$1 730.00
1000
US$2.91
US$2 910.00
2500
US$2.77
US$6 925.00
由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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