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| PartNumber | FGA60N65SMD | FGA6065ADF | FGA60N60UFDTU |
| Description | IGBT Transistors 650V, 60A Field Stop IGBT | IGBT Transistors 650V FS Gen3 Trench IGBT | IGBT Transistors 600V 60A FIELD STOP |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Package / Case | TO-3PN | TO-3PN | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Collector Emitter Voltage VCEO Max | 650 V | 650 V | 600 V |
| Collector Emitter Saturation Voltage | 1.9 V | 1.8 V | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 120 A | 120 A | 120 A |
| Pd Power Dissipation | 600 W | 306 W | - |
| Series | FGA60N65SMD | FGA6065ADF | FGA60N60UFD |
| Packaging | Tube | Tube | Tube |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Gate Emitter Leakage Current | 400 nA | +/- 400 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 450 | 450 | 450 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 0.225789 oz | 0.225789 oz | 0.225789 oz |
| Configuration | - | Single | Single |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 175 C | + 150 C |
| Continuous Collector Current Ic Max | - | 60 A | - |