SI7900AEDN-T1-E3

Mfr. #:: SI7900AEDN-T1-E3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
生命周期:: 制造商新产品。
数据表:: SI7900AEDN-T1-E3 数据表
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更多信息:: SI7900AEDN-T1-E3 更多信息

产品属性
属性值

制造商: 威世硅

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI7900AEDN-T1

安装方式: 贴片/贴片

商品名: TrenchFET/PowerPAK

包装盒: PowerPAKR 1212-8 Dual

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: PowerPAKR 1212-8 Dual

配置: 双重的

FET型: 2 N-Channel (Dual) Common Drain

最大功率: 1.5W

晶体管型: 2 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: -

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

栅极电荷-Qg-Vgs: 16nC @ 4.5V

钯功耗: 1.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 1300 ns

上升时间: 1300 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 6 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 26 mOhms

晶体管极性: N通道

典型关断延迟时间: 8600 ns

典型开启延迟时间: 850 ns

通道模式: 增强

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-E3 更多信息

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型号	制造商	描述	库存	价格
SI7900AEDN-T1-E3 DISTI # V72:2272_09216403	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6550 1000:$0.6936 500:$0.8372 250:$0.9543 100:$0.9570 25:$1.1724 10:$1.1774 1:$1.3583
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	47547In Stock	1000:$0.8050 500:$0.9715 100:$1.2491 10:$1.5540 1:$1.7200
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	47547In Stock	1000:$0.8050 500:$0.9715 100:$1.2491 10:$1.5540 1:$1.7200
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	42000In Stock	3000:$0.7546
SI7900AEDN-T1-E3 DISTI # 25790064	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.6550 1000:$0.6936 500:$0.8372 250:$0.9543 100:$0.9570 25:$1.1724 11:$1.1774
SI7900AEDN-T1-E3 DISTI # SI7900AEDN-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.7129 6000:$0.6919 12000:$0.6629 18000:$0.6449 30000:$0.6279
SI7900AEDN-T1-E3 DISTI # 06J8175	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 20V POWERPAK, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:20V,On Resistance Rds(on):36mohm,Rds(on) Test Voltage Vgs:12V,Power Dissipation Pd:1.5W, RoHS Compliant: Yes	0	1:$0.5600 3000:$0.5560 6000:$0.5290 12000:$0.4690
SI7900AEDN-T1-E3 DISTI # 09X6454	Vishay Intertechnologies	MOSFET, DUAL N CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.02ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$1.1000 10:$1.0600 100:$0.8350 250:$0.7940 500:$0.7410 1000:$0.5940
SI7900AEDN-T1-E3 DISTI # 781-SI7900AEDN-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2994	1:$1.7200 10:$1.4200 100:$1.0900 500:$0.9320 1000:$0.7350 3000:$0.6860
SI7900AEDN-T1-E3	Vishay Siliconix	6 A, 20 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET	2905	1456:$0.4840 326:$0.5500 1:$1.7600
SI7900AEDN-T1-E3 DISTI # C1S803601003759	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	250:$0.9543 100:$0.9570 25:$1.1724 10:$1.1774
SI7900AEDN-T1-E3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8	Americas -

图片	型号	描述
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	全新原装
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	全新原装
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	全新原装
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	全新原装

SI7900AEDN-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes