SI7900AEDN-T1-GE3

Mfr. #:: SI7900AEDN-T1-GE3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
生命周期:: 制造商新产品。
数据表:: SI7900AEDN-T1-GE3 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:: SI7900AEDN-T1-GE3 更多信息

产品属性
属性值

制造商: 威世

产品分类: FET - 阵列

系列: 沟槽FETR

打包: Digi-ReelR 替代包装

部分别名: SI7900AEDN-GE3

安装方式: 贴片/贴片

商品名: TrenchFET/PowerPAK

包装盒: PowerPAKR 1212-8 Dual

技术: 硅

工作温度: -55°C ~ 150°C (TJ)

安装型: 表面贴装

通道数: 2 Channel

供应商-设备-包: PowerPAKR 1212-8 Dual

配置: 双重的

FET型: 2 N-Channel (Dual) Common Drain

最大功率: 1.5W

晶体管型: 2 N-Channel

漏源电压 Vdss: 20V

输入电容-Ciss-Vds: -

FET-Feature: 逻辑电平门

Current-Continuous-Drain-Id-25°C: 6A

Rds-On-Max-Id-Vgs: 26 mOhm @ 8.5A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

栅极电荷-Qg-Vgs: 16nC @ 4.5V

钯功耗: 1.5 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 1300 ns

上升时间: 1300 ns

VGS-栅极-源极-电压: 12 V

Id 连续漏极电流: 6 A

Vds-漏-源-击穿电压: 20 V

Rds-On-Drain-Source-Resistance: 26 mOhms

晶体管极性: N通道

典型关断延迟时间: 8600 ns

典型开启延迟时间: 850 ns

通道模式: 增强

Tags: SI7900AEDN-T1, SI7900AEDN-T, SI7900AE, SI7900A, SI7900, SI790, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7900AEDN-T1-GE3 描述

***ied Electronics & Automation: SI7900AEDN-T1-GE3 Dual N-channel MOSFET Transistor; 6 A; 20V; 8-Pin PowerPAK 1212

***Components: In a Pack of 10, Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212 Vishay SI7900AEDN-T1-GE3

***ical: Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET 2N-CH 20V 6A PPAK 1212-8

SI7900AEDN-T1-GE3 更多信息

Integrated MOSFETs with Common Drain: Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

型号	制造商	描述	库存	价格
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6In Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.5236
SI7900AEDN-T1-GE3 DISTI # SI7900AEDN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 6A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7900AEDN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SI7900AEDN-T1-GE3 DISTI # 70617004	Vishay Siliconix	MOSFET 2N-CH 20V 6A PPAK 1212-8 RoHS: Compliant	0	300:$0.8200 600:$0.7500 1500:$0.6900 3000:$0.6100
SI7900AEDN-T1-GE3 DISTI # 781-SI7900AEDN-GE3	Vishay Intertechnologies	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8 RoHS: Compliant	2990	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5100 3000:$0.4760
SI7900AEDN-T1-GE3	Vishay Intertechnologies		960

相关产品

图片	型号	描述
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3	MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
	Mfr.#: SI7900AEDN-T1-E3 OMO.#: OMO-SI7900AEDN-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 1.5W
	Mfr.#: SI7900AEDN-T1-GE3 OMO.#: OMO-SI7900AEDN-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 8.5A 3.1W 26mohm @ 4.5V
	Mfr.#: SI7900AEDN OMO.#: OMO-SI7900AEDN-1190	全新原装
	Mfr.#: SI7900AEDN-T OMO.#: OMO-SI7900AEDN-T-1190	全新原装
	Mfr.#: SI7900AEDN-T1 OMO.#: OMO-SI7900AEDN-T1-1190	全新原装
	Mfr.#: SI7900AEDN-T1-E3 GE3 OMO.#: OMO-SI7900AEDN-T1-E3-GE3-1190	全新原装

可用性

库存:: Available
订购:: 3000
输入数量:

SI7900AEDN-T1-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]

参考价格（美元）

数量
单价
小计金额

1: ~~US$0.65~~; ~~US$0.65~~

10: ~~US$0.62~~; ~~US$6.20~~

100: ~~US$0.59~~; ~~US$58.71~~

500: ~~US$0.55~~; ~~US$277.25~~

1000: ~~US$0.52~~; ~~US$521.90~~

由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。

从...开始

SI7900AEDN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes