S25FL128SAGNFI013

S25FL128SAGNFI013
Mfr. #:
S25FL128SAGNFI013
制造商:
Cypress Semiconductor
描述:
Flash 128Mb, 3V, 133Mhz Serial Flash
生命周期:
制造商新产品。
数据表:
S25FL128SAGNFI013 数据表
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S25FL128SAGNFI013 更多信息 S25FL128SAGNFI013 Product Details
产品属性
属性值
制造商
产品分类
记忆
系列
FL-S
打包
卷带 (TR) 替代包装
包装盒
8-WDFN Exposed Pad
工作温度
-40°C ~ 85°C (TA)
界面
SPI 串行
电压供应
2.7 V ~ 3.6 V
供应商-设备-包
8-WSON (6x8)
内存大小
128M (16M x 8)
内存型
闪存 - NOR
速度
133MHz
格式化内存
闪光
Tags
S25FL128SAGNFI01, S25FL128SAGNFI, S25FL128SAGN, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte). 3.0V SPI Flash Memory
***et
NOR Flash Serial-SPI 3V/3.3V 128Mbit 128M x 1bit 8ns 8-Pin WSON EP T/R
***i-Key
IC FLASH 128M SPI 133MHZ 8WSON
***ark
128-MBIT CMOS 3.0 VOLT 65NM FL
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
型号 制造商 描述 库存 价格
S25FL128SAGNFI013
DISTI # S25FL128SAGNFI013-ND
Cypress SemiconductorIC FLASH 128M SPI 133MHZ 8WSON
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$2.4394
S25FL128SAGNFI013
DISTI # 68X0164
Cypress SemiconductorTAPE AND REEL / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORY WITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 256KB, WSON6X8 IN T&R PACKING0
  • 1:$3.2000
S25FL128SAGNFI013
DISTI # 797-25FL128SAGNFI013
Cypress SemiconductorNOR Flash 128Mb, 3V, 133Mhz Serial Flash
RoHS: Compliant
1917
  • 1:$2.9300
  • 10:$2.6600
  • 25:$2.6300
  • 50:$2.5900
  • 100:$2.3200
  • 250:$2.3100
  • 500:$2.2200
  • 1000:$2.1300
  • 2500:$2.0800
S25FL128SAGNFI013KOA Speer Electronics Inc 26027
    S25FL128SAGNFI013
    DISTI # XSFR00000012004
    CYPRESS SEMICONDUCTORFlash, 128MX1, PDSO8
    RoHS: Compliant
    2500
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      可用性
      库存:
      Available
      订购:
      3000
      输入数量:
      S25FL128SAGNFI013的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$3.00
      US$3.00
      10
      US$2.85
      US$28.50
      100
      US$2.70
      US$270.00
      500
      US$2.55
      US$1 275.00
      1000
      US$2.40
      US$2 400.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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