IRFAF50

Mfr. #:: IRFAF50
制造商:: Rochester Electronics, LLC
描述:: 6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
生命周期:: 制造商新产品。
数据表:: IRFAF50 数据表
交货:: DHL FedEx Ups TNT EMS
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Tags: IRFAF, IRFA, IRF

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IRFAF50 描述

***ernational Rectifier: 900V Single N-Channel Hi-Rel MOSFET in a TO-204AA package

***ponent Stockers USA: 6.2 A 900 V 1.85 ohm N-CHANNEL Si POWER MOSFET TO-204AA

***(Formerly Allied Electronics): HEXFET, Hi-Rel 900V, 6.2A, 1.6 ohm

***(Formerly Allied Electronics): IRFPF50PBF N-channel MOSFET Transistor, 6.7 A, 900 V, 3-Pin TO-247AC

***ure Electronics: Single N-Channel 900 V 1.6 Ohms Flange Mount Power Mosfet - TO-247AC

***ment14 APAC: MOSFET, N, 900V, 6.7A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.7A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.65°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:190W; Power Dissipation Pd:190W; Pulse Current Idm:27A; Termination Type:Through Hole; Voltage Vds:900V; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-CHANNEL 900V - 1.1 OHM - 8A TO-220 ZENER PROTECTED SUPERMESH MOSFET

***ical: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N CHANNEL MOSFET, 900V, 8A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.4 Ω, TO-220

***ure Electronics: N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220-3

***Yang: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:8A; On Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:8A; Resistance, Rds On:1.12ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:32A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:205W; Power, Pd:205W; Resistance, Rds on Max:1.4ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V; Width, External:10.67mm

***ure Electronics: Single N-Channel 900 V 0.8 Ohm 42 nC CoolMOS Power Mosfet - TO-220-3FP

***et: Transistor MOSFET N-Channel 900V 6.9A 3-Pin TO-220FP Tube

*** Stop Electro: Power Field-Effect Transistor, 6.9A I(D), 900V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: 900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting

***ure Electronics: N-Channel 900 V 1.3 Ohm Flange Mount SuperMESH Power Mosfet - TO-247

***icroelectronics: N-CHANNEL 900V - 1.1 OHM - 8A TO-247 ZENER PROTECTED SUPERMESH MOSFET

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

***ark: N CHANNEL MOSFET, 900V, 8A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes

***ark: MOSFET, N CH, 900V, 1.12OHM, 8A, TO-220F-3; Transistor Polarity:N Channel; Conti

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 8 A, 1.4 Ω, TO-220F

***ure Electronics: N-Channel 900 V 1.4 Ohm Flange Mount Mosfet - TO-220F

***Yang: Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220F T/R - Rail/Tube

***r Electronics: Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N CH, 900V, 8A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.12ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

型号	制造商	描述	库存	价格
IRFAF50	International Rectifier	RoHS: Not Compliant	644	1000:$6.4200 500:$6.7600 100:$7.0400 25:$7.3400 1:$7.9000
IRFAF50	International Rectifier	6.2 A, 900 V, 1.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA	1

图片	型号	描述
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	Mfr.#: IRFIBF20G/ SIHFIBF20G OMO.#: OMO-IRFIBF20G-SIHFIBF20G-1190	全新原装
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	Mfr.#: IRFR234BTMFP001 OMO.#: OMO-IRFR234BTMFP001-1190	全新原装
	Mfr.#: IRFR1N60ATRRPBF OMO.#: OMO-IRFR1N60ATRRPBF-VISHAY	RF Bipolar Transistors MOSFET N-Chan 600V 1.4 Amp
	Mfr.#: IRFU024PBF OMO.#: OMO-IRFU024PBF-VISHAY	MOSFET N-CH 60V 14A I-PAK

IRFAF50

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes