IPD65R420CFD

IPD65R420CFD
Mfr. #:
IPD65R420CFD
制造商:
Infineon Technologies
描述:
IGBT Transistors MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
生命周期:
制造商新产品。
数据表:
IPD65R420CFD 数据表
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ECAD Model:
更多信息:
IPD65R420CFD 更多信息
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
系列
CoolMOS CFD2
打包
卷轴
部分别名
IPD65R420CFDBTMA1 IPD65R420CFDXT SP000891704
单位重量
0.139332 oz
安装方式
贴片/贴片
商品名
酷摩
包装盒
TO-252-3
技术
通道数
1 Channel
配置
单身的
晶体管型
1 N-Channel
钯功耗
83.3 W
秋季时间
8 ns
上升时间
7 ns
VGS-栅极-源极-电压
30 V
Id 连续漏极电流
8.7 A
Vds-漏-源-击穿电压
650 V
VGS-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
420 mOhms
晶体管极性
N通道
Qg-门电荷
32 nC
Tags
IPD65R42, IPD65R4, IPD65R, IPD65, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS® Power Transistors EXPANSION
Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications.Learn MoreInfineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.View the entire CoolMOS® Power Transistor offering
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
型号 制造商 描述 库存 价格
IPD65R420CFDBTMA1
DISTI # IPD65R420CFDBTMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IPD65R420CFDBTMA1
    DISTI # IPD65R420CFDBTMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IPD65R420CFDBTMA1
      DISTI # IPD65R420CFDBTMA1TR-ND
      Infineon Technologies AGMOSFET N-CH 650V 8.7A TO252
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 2500:$0.8756
      IPD65R420CFDBTMA1
      DISTI # SP000891704
      Infineon Technologies AGTrans MOSFET N-CH 650V 8.7A 3-Pin(2+Tab) TO-252 (Alt: SP000891704)
      RoHS: Compliant
      Min Qty: 2500
      Europe - 2500
      • 2500:€1.3259
      • 5000:€1.1129
      • 10000:€0.9289
      • 15000:€0.8099
      • 25000:€0.7579
      IPD65R420CFDBTMA1Infineon Technologies AGPower Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
      RoHS: Compliant
      46976
      • 1000:$0.7600
      • 500:$0.8000
      • 100:$0.8400
      • 25:$0.8700
      • 1:$0.9400
      IPD65R420CFD
      DISTI # 726-IPD65R420CFD
      Infineon Technologies AGMOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
      RoHS: Compliant
      0
      • 1:$1.7400
      • 10:$1.4800
      • 100:$1.1800
      • 500:$1.0400
      • 1000:$0.8550
      IPD65R420CFDBTMA1
      DISTI # N/A
      Infineon Technologies AGMOSFET LOW POWER_LEGACY0
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        Mfr.#: IPD65R420CFDATMA1

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        MOSFET N-CH 650V 10.6A TO252
        IPD65R420CFDA

        Mfr.#: IPD65R420CFDA

        OMO.#: OMO-IPD65R420CFDA-1190

        全新原装
        IPD65R420CFDBTMA1

        Mfr.#: IPD65R420CFDBTMA1

        OMO.#: OMO-IPD65R420CFDBTMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 650V 8.7A TO252
        IPD65R420CFD

        Mfr.#: IPD65R420CFD

        OMO.#: OMO-IPD65R420CFD-126

        IGBT Transistors MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2
        可用性
        库存:
        Available
        订购:
        3500
        输入数量:
        IPD65R420CFD的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$1.20
        US$1.20
        10
        US$1.14
        US$11.36
        100
        US$1.08
        US$107.60
        500
        US$1.02
        US$508.10
        1000
        US$0.96
        US$956.40
        由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
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