 | |  | |
| PartNumber | IPD65R190C7ATMA1 | IPD65R190C7 | IPD650P06NMATMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW | MOSFET TRENCH 40<-<100V |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | PG-TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | - 60 V |
| Id Continuous Drain Current | 13 A | 13 A | - 22 A |
| Rds On Drain Source Resistance | 168 mOhms | 190 mOhms | 65 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - 4 V |
| Vgs Gate Source Voltage | 20 V | 10 V | 20 V |
| Qg Gate Charge | 23 nC | 23 nC | - 39 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 72 W | 72 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | CoolMOS C7 | CoolMOS C7 | IPD06P003 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 P-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 9 ns | 9 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | 14 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 54 ns | 54 ns | 33 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 12 ns |
| Part # Aliases | IPD65R190C7 SP000928648 | IPD65R190C7ATMA1 SP000928648 | IPD650P06NM SP004987256 |
| Unit Weight | 0.139332 oz | 0.028219 oz | - |
| Forward Transconductance Min | - | - | 21 S |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R400CEAUMA1 | MOSFET CONSUMER | |
| IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R1K4CFDBTMA1 | MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R380E6ATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD65R190C7ATMA1 | MOSFET HIGH POWER_NEW | ||
| IPD65R420CFD | MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2 | ||
| IPD65R225C7 | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 | ||
| IPD65R190C7 | MOSFET HIGH POWER_NEW | ||
| IPD65R1K0CEAUMA1 | MOSFET CONSUMER | ||
| IPD650P06NMATMA1 | MOSFET TRENCH 40<-<100V | ||
| IPD65R380C6 | MOSFET N-Ch 700V 10.6A DPAK-2 CoolMOS C6 | ||
| IPD65R1K4CFDATMA2 | MOSFET | ||
| IPD65R190C7ATMA1 | MOSFET N-CH 650V 13A TO-252 | ||
| IPD65R1K4CFDATMA1 | MOSFET N-CH 650V 2.8A TO-252 | ||
| IPD65R1K5CEAUMA1 | MOSFET N-CH 700V 5.2A TO252-3 | ||
| IPD65R380C6BTMA1 | MOSFET N-CH 650V 10.6A TO252-3 | ||
| IPD65R380E6BTMA1 | MOSFET N-CH 650V 10.6A TO252 | ||
| IPD65R400CEAUMA1 | MOSFET N-CH 650V TO-252 | ||
| IPD65R1K4CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R1K0CEAUMA1 | MOSFET N-CH 650V TO-252 | ||
| IPD65R225C7ATMA1 | MOSFET N-CH 650V 11A TO252-3 | ||
| IPD65R380C6ATMA1 | MOSFET N-CH 650V 10.6A TO252-3 | ||
| IPD65R380E6ATMA1 | MOSFET N-CH 650V 10.6A TO252 | ||
| IPD65R1K4C6ATMA1 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R250C6XTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2 | ||
| IPD65R250E6XTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 16.1A DPAK-2 | ||
| IPD65R1K4CFDBTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 8.2A DPAK-2 | ||
Infineon Technologies |
IPD65R380C6ATMA1 | MOSFET LOW POWER_LEGACY | |
| IPD65R1K4C6ATMA1 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R250C6XTMA1 | MOSFET N-Ch 700V 16.1A DPAK-2 | ||
| IPD65R250E6. | 全新原装 | ||
| IPD65R250E6 65E6250 | 全新原装 | ||
| IPD650P06NMATMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD650P06NMSAUMA1 | MOSFET P-CH 60V TO252-3 | ||
| IPD65R250E6XT | Trans MOSFET N-CH 700V 16.1A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD65R250E6XTMA1) | ||
| IPD65R190C7 | MOSFET HIGH POWER_NEW | ||
| IPD65R1K4C6 | MOSFET N-Ch 700V 3.2A DPAK-2 | ||
| IPD65R1K4CFD | MOSFET N-Ch 700V 8.2A DPAK-2 | ||
| IPD65R225C7 | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 | ||
| IPD65R250C6 | MOSFET N-Ch 700V 16.1A DPAK-2 | ||
| IPD65R250C6 , 2SD2402-EX | 全新原装 | ||
| IPD65R250C6S | 全新原装 | ||
| IPD65R250E6 | MOSFET N-Ch 700V 16.1A DPAK-2 (Alt: SP000898656) | ||
| IPD65R250E6XTMA1INFINEON | 全新原装 | ||
| IPD65R380C6 | Trans MOSFET N-CH 700V 10.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R380C6BTMA1) | ||
| IPD65R380E6 | Trans MOSFET N-CH 700V 10.6A 3-Pin(2+Tab) TO-252 | ||
| IPD65R380E6 , 2SD2402-EY | 全新原装 | ||
| IPD65R400CE | Trans MOSFET N-CH 700V 15.1A 3-Pin TO-252 T/R (Alt: IPD65R400CE) | ||
| IPD65R420CFDA | 全新原装 | ||
| IPD65R420CFD | IGBT Transistors MOSFET N-Ch 650V 8.7A DPAK-2 CoolMOS CFD2 |