PD85015TR-E

PD85015TR-E
Mfr. #:
PD85015TR-E
制造商:
STMicroelectronics
描述:
RF MOSFET Transistors POWER R.F. N-Ch Trans
生命周期:
制造商新产品。
数据表:
PD85015TR-E 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
PD85015TR-E DatasheetPD85015TR-E Datasheet (P4-P6)PD85015TR-E Datasheet (P7-P9)PD85015TR-E Datasheet (P10-P12)PD85015TR-E Datasheet (P13-P14)
ECAD Model:
更多信息:
PD85015TR-E 更多信息 PD85015TR-E Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
射频 MOSFET 晶体管
RoHS:
Y
晶体管极性:
N通道
技术:
Id - 连续漏极电流:
5 A
Vds - 漏源击穿电压:
40 V
获得:
16 dB
输出功率:
15 W
最低工作温度:
- 65 C
最高工作温度:
+ 150 C
安装方式:
贴片/贴片
包装/案例:
PowerSO-10RF-Formed-4
打包:
卷轴
配置:
单身的
高度:
3.5 mm
长度:
7.5 mm
工作频率:
1 GHz
系列:
PD85015-E
类型:
射频功率MOSFET
宽度:
9.4 mm
品牌:
意法半导体
频道模式:
增强
湿气敏感:
是的
Pd - 功耗:
59 W
产品类别:
射频 MOSFET 晶体管
出厂包装数量:
600
子类别:
MOSFET
Vgs - 栅源电压:
15 V
单位重量:
0.105822 oz
Tags
PD8501, PD850, PD85, PD8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***icroelectronics
15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***th Star Micro
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*** Source Electronics
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***icroelectronics
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***ark
RF TRANSISTOR, 40V, 2GHZ, POWERSO-10RF; Drain Source Voltage Vds:40V; Continuous Drain Current Id:5A; Power Dissipation:59W; Operating Frequency Min:-; Operating Frequency Max:2GHz; No. of Pins:3Pins; Operating Temperature Max:165°C RoHS Compliant: Yes
***icroelectronics SCT
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
***icroelectronics
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
***et Europe
Transistor RF FET N-CH 40V 5A 2GHz 3-Pin PowerSO-10RF T/R
***r Electronics
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
*** Electronic Components
RF MOSFET Transistors RF power tran LdmoST N-chann
***ponent Stockers USA
L BAND Si N-CHANNEL RF POWER MOSFET
***i-Key
TRANS N-CH 40V POWERSO-10RF FORM
***et
Trans MOSFET N-CH 40V 5A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) T/R
***icroelectronics
15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***(Formerly Allied Electronics)
MOSFET N-Ch 40V 6A Self-Protected SOT223
***ical
Trans MOSFET N-CH 40V 4-Pin(3+Tab) SOT-223 T/R
***ark
N CHANNEL MOSFET, 40V, 6A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
***ment14 APAC
SMART MOSFET, N, 42V, 1.73W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:40V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:300mJ; Clamping Voltage Vc Max:40V; Current Id Max:6A; Package / Case:SOT-223; Pin Configuration:1(G),2(D),3(S), 4-TAB(D); Power Dissipation Pd:1.1W; Power Dissipation Pd:8.93W; Shutdown Temperature:175°C; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:16VDC; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:1V
***emi
Self-protected FET, Current and Temp Limit, 42 V clamp, ESD
***ponent Stockers USA
6 A 42 V 0.12 ohm N-CHANNEL Si POWER MOSFET TO-261AA
***i-Key
IC FET VOLT CLAMP 6A 40V SOT-223
***r Electronics
Buffer/Inverter Based Peripheral Driver, PDSO4
***ser
MOSFETs- Protected 42V 6A N-Channel
***enic
IC PWR DRIVER N-CHAN 1:1 SOT223
***(Formerly Allied Electronics)
SI2318CDS-T1-GE3 N-channel MOSFET Transistor; 5.6 A; 40 V; 3-Pin SOT-23
***ure Electronics
N-Channel 40 V 0.042 Ohm 2.1 W Surface Moun Power Mosfet - SOT-23-3
***enic
40V 5.6A 1.25W 42m´Î@10V4.3A 2.5V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
***et
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R
*** Stop Electro
Small Signal Field-Effect Transistor, 5.6A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
***ment14 APAC
MOSFET,N CH,40V,5.6A,DIODE,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.035ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:4.3A; Power Dissipation Pd:1.25W; Voltage Vgs Max:20V
型号 制造商 描述 库存 价格
PD85015TR-E
DISTI # 497-10345-1-ND
STMicroelectronicsTRANS RF N-CH FET POWERSO-10RF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    PD85015TR-E
    DISTI # 497-10345-6-ND
    STMicroelectronicsTRANS RF N-CH FET POWERSO-10RF
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      PD85015TR-E
      DISTI # 497-10345-2-ND
      STMicroelectronicsTRANS RF N-CH FET POWERSO-10RF
      RoHS: Compliant
      Min Qty: 600
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 600:$14.6004
      PD85015TR-E
      DISTI # PD85015TR-E
      STMicroelectronicsTrans MOSFET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) T/R - Tape and Reel (Alt: PD85015TR-E)
      RoHS: Compliant
      Min Qty: 600
      Container: Reel
      Americas - 0
      • 600:$15.7900
      • 1200:$15.0900
      • 2400:$14.3900
      • 3600:$13.6900
      • 6000:$13.4900
      PD85015-E
      DISTI # 511-PD85015-E
      STMicroelectronicsRF MOSFET Transistors POWER R.F. N-Ch Trans
      RoHS: Compliant
      10
      • 1:$20.4200
      • 5:$20.2100
      • 10:$18.8400
      • 25:$17.9900
      • 100:$16.0900
      • 250:$15.3500
      • 500:$14.6100
      PD85015TR-E
      DISTI # 511-PD85015TR-E
      STMicroelectronicsRF MOSFET Transistors POWER R.F. N-Ch Trans
      RoHS: Compliant
      0
      • 1:$20.4200
      • 5:$20.2100
      • 10:$18.8400
      • 25:$17.9900
      • 100:$16.0900
      • 250:$15.3500
      • 600:$14.6100
      PD85015TR-E
      DISTI # PD85015TR-E
      STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant
      0
        图片 型号 描述
        PD85015-E

        Mfr.#: PD85015-E

        OMO.#: OMO-PD85015-E

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        RF MOSFET Transistors RF PWR Trans LdMOST N-Ch 6W 15dB 870MHz
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        TRANS RF N-CH FET POWERSO-10RF
        可用性
        库存:
        Available
        订购:
        1500
        输入数量:
        PD85015TR-E的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$20.42
        US$20.42
        5
        US$20.21
        US$101.05
        10
        US$18.84
        US$188.40
        25
        US$17.99
        US$449.75
        100
        US$16.09
        US$1 609.00
        250
        US$15.35
        US$3 837.50
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