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IRGIB10B60KD1P

IRGIB10B60KD1P
Mfr. #:
IRGIB10B60KD1P
制造商:
Infineon / IR
描述:
IGBT Transistors 600V Low-Vceon
生命周期:
制造商新产品。
数据表:
IRGIB10B60KD1P 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
IRGIB10B60KD1P DatasheetIRGIB10B60KD1P Datasheet (P4-P6)IRGIB10B60KD1P Datasheet (P7-P9)IRGIB10B60KD1P Datasheet (P10-P12)IRGIB10B60KD1P Datasheet (P13)
ECAD Model:
更多信息:
IRGIB10B60KD1P 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-220FP-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
600 V
集电极-发射极饱和电压：
2.1 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
16 A
Pd - 功耗：
44 W
最低工作温度：
- 55 C
打包：
管子
高度：
9.02 mm
长度：
10.67 mm
宽度：
4.83 mm
品牌：
英飞凌/红外
产品类别：
IGBT晶体管
出厂包装数量：
2000
子类别：
IGBT
第 # 部分别名：
SP001549794
单位重量：
0.081130 oz
Tags
IRGIB10B60KD1P, IRGIB10B60KD1, IRGIB10, IRGIB1, IRGIB, IRGI, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Full-Pack
***ineon SCT
600 V IGBT with anti-parallel diode in TO-220 package, TO-220-3 FP, RoHS
***ied Electronics & Automation
600V Low-Vceon Copack IGBT in a TO-220 FullPak package
***ineon
Target Applications: Dryer; Fan; Lighting HID; Pump; Solar; UPS; Washing Machine
***
Trans IGBT Chip NCH 600V 16A 3Pin(3+Tab) TO220 FullPack
***ark
Transistor; Transistor Type:IGBT; Collector Emitter Voltage, Vces:600V; Power Dissipation, Pd:44W; Operating Temperature Range:-55°C to +175°C; Collector Emitter Saturation Voltage, Vce(sat):2.1V ;RoHS Compliant: Yes
***nell
IGBT, TO-220FP; DC Collector Current: 16A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 44W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 16A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Power Dissipation Max: 44W; Pulsed Current Icm: 32A; Rise Time: 34ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
型号 制造商 描述 库存 价格
IRGIB10B60KD1P
DISTI # 27108573		Infineon Technologies AGTrans IGBT Chip N-CH 600V 16A 44000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
RoHS: Compliant		2150
  • 1000:$1.5936
  • 500:$1.8816
  • 250:$2.1024
  • 100:$2.2176
  • 10:$2.5536
IRGIB10B60KD1P
DISTI # IRGIB10B60KD1P-ND		Infineon Technologies AGIGBT 600V 16A 44W TO220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		2In Stock
  • 1:$3.2800
IRGIB10B60KD1P
DISTI # C1S322000499966		Infineon Technologies AGTrans IGBT Chip N-CH 600V 16A 44000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
RoHS: Compliant		2150
  • 1000:$1.6900
  • 500:$1.8200
  • 100:$2.3800
  • 50:$2.5900
  • 10:$3.1500
  • 1:$4.8600
IRGIB10B60KD1P
DISTI # IRGIB10B60KD1P		Infineon Technologies AGTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Full-Pack - Rail/Tube (Alt: IRGIB10B60KD1P)
RoHS: Compliant
Min Qty: 2000
Container: Tube		Americas - 0
  • 2000:$1.5900
  • 4000:$1.4900
  • 8000:$1.4900
  • 12000:$1.3900
  • 20000:$1.3900
IRGIB10B60KD1P
DISTI # SP001549794		Infineon Technologies AGTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220 Full-Pack (Alt: SP001549794)
RoHS: Compliant
Min Qty: 1
Container: Package		Europe - 0
  • 1:€1.7900
  • 10:€1.5900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.2900
  • 500:€1.2900
  • 1000:€1.1900
IRGIB10B60KD1P
DISTI # 942-IRGIB10B60KD1P		Infineon Technologies AGIGBT Transistors 600V Low-Vceon
RoHS: Compliant		351
  • 1:$3.1300
  • 10:$2.6600
  • 100:$2.3100
  • 250:$2.1900
  • 500:$1.9600
  • 1000:$1.6600
IRGIB10B60KD1PInternational Rectifier 
RoHS: Not Compliant		550
  • 1000:$1.3400
  • 500:$1.4100
  • 100:$1.4700
  • 25:$1.5300
  • 1:$1.6500
IRGIB10B60KD1P
DISTI # IRGIB10B60KD1P		Infineon Technologies AGTransistor: IGBT,600V,16A,44W,TO220AB33
  • 1:$2.4700
  • 3:$2.1800
  • 10:$1.9700
  • 50:$1.8300
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OMO.#: OMO-IR2133JPBF-INFINEON-TECHNOLOGIES

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可用性
库存:
266
订购:
2249
输入数量:
IRGIB10B60KD1P的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$3.12
US$3.12
10
US$2.65
US$26.50
100
US$2.30
US$230.00
250
US$2.18
US$545.00
500
US$1.95
US$975.00
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