 | | |
| PartNumber | IRGIB15B60KD1P | IRGIB10B60KD1P |
| Description | IGBT Transistors 600V Low-Vceon | IGBT Transistors 600V Low-Vceon |
| Manufacturer | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-220FP-3 | TO-220FP-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.8 V | 2.1 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 19 A | 16 A |
| Pd Power Dissipation | 52 W | 44 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Packaging | Tube | Tube |
| Height | 9.02 mm | 9.02 mm |
| Length | 10.67 mm | 10.67 mm |
| Width | 4.83 mm | 4.83 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | SP001537730 | SP001549794 |
| Unit Weight | 0.081130 oz | 0.081130 oz |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IRGIB15B60KD1P | IGBT Transistors 600V Low-Vceon | |
| IRGIB15B60KD1P | IGBT Transistors 600V Low-Vceon | ||
| IRGIB10B60KD1P | IGBT Transistors 600V Low-Vceon | ||
Infineon / IR |
IRGIB10B60KD1P | IGBT Transistors 600V Low-Vceon | |
| IRGIB15B60KD1P-EL | Trans IGBT Chip N-CH 600V 19A 3-Pin(3+Tab) TO-220 Full-Pack EL - Rail/Tube (Alt: IRGIB15B60KD1P) | ||
| IRGIB10B60KD | 全新原装 | ||
| IRGIB10B60KD1 | 全新原装 | ||
| IRGIB10B60KD1 GIB10B60K | 全新原装 | ||
| IRGIB10B60KD1,GIB10B60KD | 全新原装 | ||
| IRGIB10B60KD1P. | 全新原装 | ||
| IRGIB10B60KD1PBF | 全新原装 | ||
| IRGIB10B60KD1PBF. | 全新原装 | ||
| IRGIB15B60KD1 | 全新原装 | ||
| IRGIB15B60KD1PBF | 全新原装 | ||
| IRGIB15B60KD1PBF,GIB15B6 | 全新原装 | ||
| IRGIB15B60KD1PBF. | 全新原装 | ||
| IRGIB15B60KD1PINFINEON | 全新原装 |