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IRF7450PBF

IRF7450PBF
Mfr. #:
IRF7450PBF
制造商:
Infineon Technologies
描述:
MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC
生命周期:
制造商新产品。
数据表:
IRF7450PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7450PBF DatasheetIRF7450PBF Datasheet (P4-P6)IRF7450PBF Datasheet (P7-P8)
ECAD Model:
产品属性
属性值
制造商：
英飞凌
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
SO-8
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
200 V
Id - 连续漏极电流：
2.5 A
Rds On - 漏源电阻：
170 mOhms
Vgs - 栅源电压：
30 V
Qg - 门电荷：
26 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
3 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
1.75 mm
长度：
4.9 mm
晶体管类型：
1 N-Channel
类型：
开关管
宽度：
3.9 mm
品牌：
英飞凌科技
秋季时间：
18 ns
产品类别：
MOSFET
上升时间：
3 ns
出厂包装数量：
3800
子类别：
MOSFET
典型关断延迟时间：
17 ns
典型的开启延迟时间：
10 ns
第 # 部分别名：
SP001559868
单位重量：
0.019048 oz
Tags
IRF7450, IRF745, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.17 Ohm 39 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 200V 2.5A 8-Pin SOIC T/R
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
Mosfet, N-Ch, 200V, 2.5A, Soic-8; Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***ark
Mosfet Transistor, N Channel, 1.9 A, 150 V, 280 Mohm, 10 V, 5.5 V Rohs Compliant: Yes
***(Formerly Allied Electronics)
IRF7465PBF N-channel MOSFET Transistor,1.9 A, 150 V, 8-Pin SOIC
***ure Electronics
Single N-Channel 150 V 0.28 Ohm 15 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 150V 1.9A 8-Pin SOIC Tube
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
*** Stop Electro
Small Signal Field-Effect Transistor, 1.9A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.9 / Drain-Source Voltage (Vds) V = 150 / ON Resistance (Rds(on)) mOhm = 280 / Gate-Source Voltage V = 30 / Fall Time ns = 9 / Rise Time ns = 1.2 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2.5
***ure Electronics
Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET,200V, 3.0A, 130mΩ
*** Source Electronics
MOSFET N-CH 200V 3A 8-SO / Trans MOSFET N-CH 200V 3A 8-Pin SOIC T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ponent Stockers USA
3 A 150 V 0.095 ohm N-CHANNEL Si POWER MOSFET MS-012AA
***i-Key
MOSFET N-CH 150V 3A 8-SOP
***ser
MOSFETs SO-8
***(Formerly Allied Electronics)
SI7464DP-T1-E3 N-channel MOSFET Transistor; 1.8 A; 200 V; 8-Pin SOIC
***ow.cn
SI7464DP-T1-E3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
***ical
Trans MOSFET N-CH 200V 1.8A 8-Pin PowerPAK SO T/R
***ponent Sense
TRANSISTOR MOSFET POWER N- CHANNEL 2
***ark
N-Ch 200-V (D-S) Fast Switching Mosfet
***ronik
N-CH 200V 2A 240mOhm PPSO-8 RoHSconf
***eco
N-CH POWERPAK SO-8 200V 240MOHM @ 10V
***(Formerly Allied Electronics)
SI7898DP-T1-E3 N-channel MOSFET Transistor; 3 A; 150 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 150 V 0.085 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
***et
Trans MOSFET N-CH 150V 4.8A 8-Pin PowerPAK SOIC
***ment14 APAC
N CHANNEL MOSFET, 150V, 4.8A, SOIC; Tran; N CHANNEL MOSFET, 150V, 4.8A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:4V; No. of Pins:8
***ure Electronics
Single N-Channel 150 V 0.09 Ohm 41 nC HEXFET® Power Mosfet - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R / MOSFET N-CH 150V 3.6A 8-SOIC
***ineon SCT
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.6A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:30V; Package/Case:8-SO; Power Dissipation, Pd:2.5W ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***nell
MOSFET, N-CH, 150V, 3.6A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single P-Channel 60 V 0.19 Ohm 9 nC 2.5 mW Silicon SMT Mosfet - SOIC-8
***p One Stop
Trans MOSFET P-CH 60V 3.42A Automotive 8-Pin SO T/R
***i-Key
MOSFET P-CH 60V 2.7A 8SO
***(Formerly Allied Electronics)
MOSFET; P-Ch; Vds -60V; Vgs +/- 20V; Rds(on) 150mohm; Id 4.7A; SO-8; Pd 5W
***ure Electronics
SI9407BDY Series 60 V 0.12 Ohm 22 nC P-Channel Surface Mount Mosfet - SOIC-8
***enic
60V 4.7A 2.4W 120m´Î@10V3.2A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***nsix Microsemi
Small Signal Field-Effect Transistor, 4.7A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Mosfet, P Channel, -60V, -4.7A, Soic-8, Full Reel; Channel Type:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.7A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:5W Rohs Compliant: No
***nell
MOSFET, P CH, 60V, 4.7A, 8SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C
***icroelectronics
P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package
***ure Electronics
P-Channel 60 V 160 mOhm Surface Mount STripFET F6 Power Mosfet SOIC-8
***et
Trans MOSFET P-CH 60V 3A 8-Pin SOIC T/R
***ure Electronics
Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 6.3Milliohms;ID 14A;SO-8;PD 2.5W;VGS +/-30V
***ure Electronics
Single N-Channel 30 V 8 mOhm 59 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 14A 8-Pin SOIC Tube
***ment14 APAC
MOSFET, N-CH, 30V, 14A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Source Voltage Vds:30V; On Resistance
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.008ohm; Voltage, Vgs Rds on Measurement:16V; Voltage, Vgs th Typ:4V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:110A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Power Dissipation:2.5W; Power, Pd:2.5W; SMD Marking:F7458; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V; Width, External:4.05mm
型号 制造商 描述 库存 价格
IRF7450PBF
DISTI # 27053951		Infineon Technologies AGTrans MOSFET N-CH 200V 2.5A 8-Pin SOIC Tube
RoHS: Compliant		1465
  • 38000:$0.4809
  • 19000:$0.4818
  • 7602:$0.4837
  • 3802:$0.4847
  • 3800:$0.4866
IRF7450TRPBF
DISTI # IRF7450PBFCT-ND		Infineon Technologies AGMOSFET N-CH 200V 2.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7752In Stock
  • 1000:$0.8010
  • 500:$1.0146
  • 100:$1.3083
  • 10:$1.6550
  • 1:$1.8700
IRF7450TRPBF
DISTI # IRF7450PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 200V 2.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7752In Stock
  • 1000:$0.8010
  • 500:$1.0146
  • 100:$1.3083
  • 10:$1.6550
  • 1:$1.8700
IRF7450TRPBF
DISTI # IRF7450PBFTR-ND		Infineon Technologies AGMOSFET N-CH 200V 2.5A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.7258
IRF7450PBF
DISTI # IRF7450PBF-ND		Infineon Technologies AGMOSFET N-CH 200V 2.5A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF7450PBF
    DISTI # C1S322000590502    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		1465
    • 1000:$0.7510
    • 500:$0.8130
    • 100:$0.9050
    • 50:$1.0700
    • 25:$1.2000
    • 5:$1.6500
    IRF7450PBF
    DISTI # IRF7450PBF    		Infineon Technologies AGTrans MOSFET N-CH 200V 2.5A 8-Pin SOIC - Rail/Tube (Alt: IRF7450PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 4738
      IRF7450PBF
      DISTI # SP001559868      		Infineon Technologies AGTrans MOSFET N-CH 200V 2.5A 8-Pin SOIC (Alt: SP001559868)
      RoHS: Compliant
      Min Qty: 1      		Europe - 477
      • 1:€0.6139
      • 10:€0.5549
      • 25:€0.5539
      • 50:€0.5529
      • 100:€0.4969
      • 500:€0.4469
      • 1000:€0.4129
      IRF7450PBF
      DISTI # 70019635      		Infineon Technologies AGIRF7450PBF N-channel MOSFET Transistor,2.5 A,200 V,8-Pin SOIC
      RoHS: Compliant      		0
      • 10:$1.5000
      IRF7450PBFInfineon Technologies AGSingle N-Channel 200 V 170 mOhm 39 nC HEXFET Power Mosfet - SOIC-8
      RoHS: Compliant      		490Tube
      • 15:$0.8000
      • 500:$0.7300
      IRF7450PBF
      DISTI # 942-IRF7450PBF      		Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 170mOhms 26nC
      RoHS: Compliant      		4219
      • 1:$1.6300
      • 10:$1.3900
      • 100:$1.0700
      • 500:$0.9410
      • 1000:$0.7430
      IRF7450PBFInternational Rectifier2.5 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA190
      • 61:$0.5880
      • 13:$0.8400
      • 1:$1.6800
      IRF7450PBFInternational Rectifier 51
        IRF7450PBF
        DISTI # 8268932P        		Infineon Technologies AGHEXFET N-CH MOSFET 2.5A 200V SOIC8, TU3615
        • 50:£0.3820
        IRF7450PBF
        DISTI # IRF7450PBF        		Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,2.5A,3W,SO8190
        • 1:$0.9039
        • 3:$0.8199
        • 10:$0.7058
        • 95:$0.6245
        IRF7450PBFInternational Rectifier 
        RoHS: Compliant        		Europe - 2280
          IRF7450PBF
          DISTI # 1013459          		Infineon Technologies AGMOSFET, N, SO-8
          RoHS: Compliant          		80
          • 1:$2.5900
          • 10:$2.2000
          • 100:$1.7000
          • 500:$1.5000
          • 1000:$1.1800
          • 2500:$1.0500
          IRF7450PBF
          DISTI # 1013459          		Infineon Technologies AGMOSFET, N, SO-8
          RoHS: Compliant          		90
          • 5:£0.7140
          • 25:£0.5910
          • 100:£0.5300
          • 250:£0.4890
          • 500:£0.4570
          IRF7450PBF
          DISTI # XSFP00000147592          		Infineon Technologies AGPowerField-EffectTransistor,2.5AI(D),200V,0.17ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,MS-012AA
          RoHS: Compliant          		330
          • 190:$1.6000
          • 330:$1.4500
          图片 型号 描述
          MURA120T3G

          Mfr.#: MURA120T3G

          OMO.#: OMO-MURA120T3G

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          BSL215CH6327XTSA1

          Mfr.#: BSL215CH6327XTSA1

          OMO.#: OMO-BSL215CH6327XTSA1

          		 MOSFET SMALL SIGNAL+P-CH
          1N5819HW-7-F

          Mfr.#: 1N5819HW-7-F

          OMO.#: OMO-1N5819HW-7-F

          		 Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
          08056C106KAT2A

          Mfr.#: 08056C106KAT2A

          OMO.#: OMO-08056C106KAT2A

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 6.3V 10uF X7R 0805 0.1
          08055C334KAT2A

          Mfr.#: 08055C334KAT2A

          OMO.#: OMO-08055C334KAT2A-AVX

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50volts .33uF 10%
          08056C106KAT2A

          Mfr.#: 08056C106KAT2A

          OMO.#: OMO-08056C106KAT2A-AVX

          		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 6.3volts 10uF 10% X7R
          MURA120T3G

          Mfr.#: MURA120T3G

          OMO.#: OMO-MURA120T3G-ON-SEMICONDUCTOR

          		 Rectifiers 200V 1A UltraFast
          1N5819HW-7-F

          Mfr.#: 1N5819HW-7-F

          OMO.#: OMO-1N5819HW-7-F-DIODES

          		 DIODE SCHOTTKY 40V 1A SOD123
          BSL215CH6327XTSA1

          Mfr.#: BSL215CH6327XTSA1

          OMO.#: OMO-BSL215CH6327XTSA1-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET SMALL SIGNAL+P-CH
          XAL5050-153MEC

          Mfr.#: XAL5050-153MEC

          OMO.#: OMO-XAL5050-153MEC-1190

          		 Fixed Inductors 15uH 20% 3.9A 76.7mOhms AEC-Q200
          可用性
          库存:
          Available
          订购:
          1986
          输入数量:
          IRF7450PBF的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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