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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A DPAK RoHS: Not compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SPD02N60C3BTMA1 DISTI # SPD02N60C3BTMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 650V 1.8A DPAK RoHS: Not compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SPD02N60C3BTMA1 DISTI # 31645194 | Infineon Technologies AG | Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant | 2500 |
|
| SPD02N60C3 DISTI # 726-SPD02N60C3 | Infineon Technologies AG | MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS C3 RoHS: Compliant | 0 | |
| SPD02N60C3BTMA1 DISTI # 1156419 | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| SPD02N60C3BTMA1 DISTI # 1156419RL | Infineon Technologies AG | MOSFET, N, COOLMOS, D-PAK RoHS: Compliant | 0 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: SPD02N60C3BTMA1 OMO.#: OMO-SPD02N60C3BTMA1 |
MOSFET LOW POWER_LEGACY |
|
Mfr.#: SPD02N60C3 OMO.#: OMO-SPD02N60C3-1190 |
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
|
|
Mfr.#: SPD02N60C3(02N60C3) OMO.#: OMO-SPD02N60C3-02N60C3--1190 |
全新原装 |
|
|
Mfr.#: SPD02N60C3,02N60C3 OMO.#: OMO-SPD02N60C3-02N60C3-1190 |
全新原装 |
|
Mfr.#: SPD02N60C3BTMA1 |
MOSFET N-CH 650V 1.8A DPAK |
|
|
Mfr.#: SPD02N60C3_05 OMO.#: OMO-SPD02N60C3-05-1190 |
全新原装 |
|
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Mfr.#: SPD02N60C5 OMO.#: OMO-SPD02N60C5-1190 |
全新原装 |