 | | | |
| PartNumber | SPD02N60 | SPD02N60C3 | SPD02N60C3(02N60C3) |
| Description | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| Manufacturer | Infineon | INFINEON | - |
| Product Category | FETs - Single | FETs - Single | - |
| Series | - | CoolMOS C3 | - |
| Packaging | - | Reel | - |
| Part Aliases | - | SP000308771 SPD02N60C3BTMA1 SPD02N60C3XT | - |
| Unit Weight | - | 0.139332 oz | - |
| Mounting Style | - | SMD/SMT | - |
| Tradename | - | CoolMOS | - |
| Package Case | - | TO-252-3 | - |
| Technology | - | Si | - |
| Number of Channels | - | 1 Channel | - |
| Configuration | - | Single | - |
| Transistor Type | - | 1 N-Channel | - |
| Pd Power Dissipation | - | 25 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 12 ns | - |
| Rise Time | - | 3 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 1.8 A | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Rds On Drain Source Resistance | - | 3 Ohms | - |
| Transistor Polarity | - | N-Channel | - |
| Typical Turn Off Delay Time | - | 68 ns | - |
| Typical Turn On Delay Time | - | 6 ns | - |
| Channel Mode | - | Enhancement | - |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
SPD02N60C3BTMA1 | MOSFET LOW POWER_LEGACY | |
| SPD02N60S5 | IGBT Transistors MOSFET N-Ch 600V 1.8A DPAK-2 CoolMOS S5 | ||
| SPD02N60 | 全新原装 | ||
| SPD02N60C3 | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | ||
| SPD02N60C3(02N60C3) | 全新原装 | ||
| SPD02N60C3,02N60C3 | 全新原装 | ||
| SPD02N60C3_05 | 全新原装 | ||
| SPD02N60C5 | 全新原装 | ||
| SPD02N60S5 02N60S5 | 全新原装 | ||
Infineon Technologies |
SPD02N60C3BTMA1 | MOSFET N-CH 650V 1.8A DPAK | |
| SPD02N60S5BTMA1 | MOSFET N-CH 600V 1.8A TO-252 |