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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPB025N08N3GATMA1 DISTI # V72:2272_06377516 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 491 |
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| IPB025N08N3GATMA1 DISTI # V36:1790_06377516 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 7579In Stock |
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| IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 7579In Stock |
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| IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 5000In Stock |
|
| IPB025N08N3 G DISTI # 32731516 | Infineon Technologies AG | 0 | 1000 |
|
| IPB025N08N3GATMA1 DISTI # 31005994 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 1000 |
|
| IPB025N08N3GATMA1 DISTI # 32864934 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 760 |
|
| IPB025N08N3GATMA1 DISTI # 30331029 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 491 |
|
| IPB025N08N3 G DISTI # IPB025N08N3 G | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) RoHS: Compliant Min Qty: 148 Container: Bulk | Americas - 0 |
|
| IPB025N08N3GXT DISTI # IPB025N08N3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB025N08N3GATMA1 DISTI # SP000311980 | Infineon Technologies AG | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Europe - 0 |
|
| IPB025N08N3GATMA1 DISTI # 60R2648 | Infineon Technologies AG | MOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes | 0 |
|
| IPB025N08N3 G DISTI # 726-IPB025N08N3G | Infineon Technologies AG | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1000 |
|
| IPB025N08N3GATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 20 |
|
| IPB025N08N3 G | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2700 |
|
| IPB025N08N3GATMA1 DISTI # 8986898P | Infineon Technologies AG | MOSFET N-CHANNEL 80V 120A TO263-3, RL | 198 |
|
| IPB025N08N3GATMA1 DISTI # 1775525 | Infineon Technologies AG | MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant | 298 |
|
| IPB025N08N3GATMA1 DISTI # 1775525 | Infineon Technologies AG | MOSFET, N CH, 120A, 80V, PG-TO263-3 | 1398 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
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Mfr.#: IPB024N10N5ATMA1 OMO.#: OMO-IPB024N10N5ATMA1 |
MOSFET DIFFERENTIATED MOSFETS |
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Mfr.#: IPB024N08N5ATMA1 OMO.#: OMO-IPB024N08N5ATMA1 |
MOSFET N-Ch 80V 120A D2PAK-2 |
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Mfr.#: IPB026N06N OMO.#: OMO-IPB026N06N |
MOSFET N-Ch 60V 100A D2PAK-2 |
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Mfr.#: IPB025N10N3GATMA1 OMO.#: OMO-IPB025N10N3GATMA1 |
MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB020N08N5ATMA1-CUT TAPE |
全新原装 |
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Mfr.#: IPB022N04L OMO.#: OMO-IPB022N04L-1190 |
全新原装 |
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Mfr.#: IPB023N06N3G OMO.#: OMO-IPB023N06N3G-1190 |
140 A, 60 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 |
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Mfr.#: IPB025N08N3 OMO.#: OMO-IPB025N08N3-1190 |
全新原装 |
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Mfr.#: IPB020N04N G OMO.#: OMO-IPB020N04N-G-124 |
Darlington Transistors MOSFET N-Ch 40V 140A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB027N10N3 G OMO.#: OMO-IPB027N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 |