SIHB22N60E-E3

Mfr. #:: SIHB22N60E-E3
制造商:: Vishay
描述:: RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
生命周期:: 制造商新产品。
数据表:: SIHB22N60E-E3 数据表
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ECAD Model:
更多信息:: SIHB22N60E-E3 更多信息

产品属性
属性值

Tags: SIHB22N60E, SIHB22N60, SIHB22, SIHB2, SIHB, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHB22N60E-E3 描述

***ure Electronics: E Series N-Channel 600 V 0.18 O 86 nC Surface Mount Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK

***et: Trans MOSFET N-CH 600V 21A 3-Pin D2PAK

***i-Key: MOSFET N-CH 600V 21A D2PAK

***ark: N-CHANNEL 600V

SIHB22N60E-E3 更多信息

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

型号	制造商	描述	库存	价格
SIHB22N60E-E3 DISTI # V36:1790_09219017	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin(2+Tab) D2PAK RoHS: Compliant	0	1000000:$2.0180 500000:$2.0230 100000:$2.6420 10000:$3.9000 1000:$4.1200
SIHB22N60E-E3 DISTI # SIHB22N60E-E3-ND	Vishay Siliconix	MOSFET N-CH 600V 21A D2PAK Min Qty: 1 Container: Tube	368In Stock	5000:$1.9891 3000:$2.0668 1000:$2.1756 100:$3.0303 25:$3.4964 10:$3.6990 1:$4.1200
SIHB22N60E-E3 DISTI # SIHB22N60E-E3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 21A 3-Pin D2PAK - Tape and Reel (Alt: SIHB22N60E-E3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0
SIHB22N60E-E3 DISTI # 781-SIHB22N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2025	1:$4.1400 10:$3.4300 100:$2.8200 250:$2.7300 500:$2.4500 1000:$2.0700 2000:$1.9600
SIHB22N60E-GE3 DISTI # 781-SIHB22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	2740	1:$4.1400 10:$3.4300 100:$2.8200 250:$2.7300 500:$2.4500 1000:$2.0700 2000:$1.9600
SIHB22N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs D2PAK (TO-263) RoHS: Compliant	Americas - 62600	50:$2.6850 100:$2.4360 250:$2.2160 500:$2.1440 1000:$1.9360

相关产品

图片	型号	描述
	Mfr.#: SIHB22N60EF-GE3 OMO.#: OMO-SIHB22N60EF-GE3	MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode
	Mfr.#: SIHB22N60AE-GE3 OMO.#: OMO-SIHB22N60AE-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60E-GE3 OMO.#: OMO-SIHB22N60E-GE3	MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
	Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3	MOSFET 600V Vds E Series D2PAK TO-263
	Mfr.#: SIHB22N60E-E3 OMO.#: OMO-SIHB22N60E-E3-VISHAY	RF Bipolar Transistors MOSFET 600V 180mOhm@10V 21A N-Ch E-SRS
	Mfr.#: SIHB22N60AEL-GE3 OMO.#: OMO-SIHB22N60AEL-GE3-VISHAY	MOSFET N-CHAN 600V
	Mfr.#: SIHB22N60ET1-GE3 OMO.#: OMO-SIHB22N60ET1-GE3-VISHAY	MOSFET N-CH 600V 21A TO263
	Mfr.#: SIHB22N60S-GE3 OMO.#: OMO-SIHB22N60S-GE3-VISHAY	MOSFET N-CH 650V TO263
	Mfr.#: SIHB22N60SE3 OMO.#: OMO-SIHB22N60SE3-1190	Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
	Mfr.#: SIHB22N60EL-GE3 OMO.#: OMO-SIHB22N60EL-GE3-VISHAY	MOSFET N-CH 600V 21A TO263