PartNumber | SIHB22N60EF-GE3 | SIHB22N60E-E3 | SIHB22N60E-GE3 |
Description | MOSFET Nch 600V Vds 30V Vgs TO-263; w/diode | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) | MOSFET 600V Vds 30V Vgs D2PAK (TO-263) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 650 V |
Id Continuous Drain Current | 19 A | 21 A | 21 A |
Rds On Drain Source Resistance | 182 mOhms | 180 mOhms | 180 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 4 V | 4 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 96 nC | 57 nC | 57 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 179 W | 227 W | 227 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | Tube |
Series | EF | E | E |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 5.8 S | - | - |
Fall Time | 25 ns | 35 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 21 ns | 27 ns | - |
Factory Pack Quantity | 50 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 58 ns | 66 ns | - |
Typical Turn On Delay Time | 15 ns | 18 ns | - |
Unit Weight | - | 0.050717 oz | 0.050717 oz |