OMO ElectronicOMO Electronic
Expand menu
您好，登录我的帐户
0 购物车

STU3N62K3

STU3N62K3
Mfr. #:
STU3N62K3
制造商:
STMicroelectronics
描述:
MOSFET N-Ch, 620V-2.2ohms 2.7A
生命周期:
制造商新产品。
数据表:
STU3N62K3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STU3N62K3 更多信息 STU3N62K3 Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-251-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
620 V
Id - 连续漏极电流：
2.7 A
Rds On - 漏源电阻：
2.5 Ohms
Vgs - 栅源电压：
30 V
Qg - 门电荷：
13 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
45 W
配置：
单身的
频道模式：
增强
商品名：
网状网
打包：
管子
高度：
6.2 mm
长度：
6.6 mm
系列：
STU3N62K3
晶体管类型：
1 N-Channel
宽度：
2.4 mm
品牌：
意法半导体
秋季时间：
15.6 ns
产品类别：
MOSFET
上升时间：
6.8 ns
出厂包装数量：
3000
子类别：
MOSFET
典型关断延迟时间：
22 ns
典型的开启延迟时间：
9 ns
单位重量：
0.139332 oz
Tags
STU3N, STU3, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in IPAK package
*** Source Electronics
Trans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 620V 2.7A IPAK
***r Electronics
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET, N CH, 620V, 2.7A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; MSL:- RoHS Compliant: Yes
***icroelectronics
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in IPAK package
***ure Electronics
N-Channel 620 V 2 Ohm Through Hole SuperMESH3 Power Mosfet - IPAK
***ark
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.8A; Source Voltage Vds:620V; On Resistance
***r Electronics
Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
***icroelectronics
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in IPAK package
*** Electronics
MOSFET Transistor, N Channel, 5 A, 600 V, 0.84 ohm, 10 V, 3 V RoHS Compliant: Yes
*** Source Electronics
MOSFET N-CH 600V 5A IPAK / Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 600V, 5A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes
***inecomponents.com
60V P-Channel A-FET / Substitute of IRFU9024
***i-Key
P-CHANNEL POWER MOSFET
***ser
MOSFETs PCh/60V/7.8a/0.28Ohm
***emi
N-Channel Power MOSFET, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK
***ure Electronics
Single N-Channel 600 V 0.90 Ohm 17 nC 52 W Silicon Through Hole Mosfet - TO-251
***el Electronic
FAIRCHILD SEMICONDUCTOR FCU900N60ZPower MOSFET, N Channel, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
*** Stop Electro
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH, 600V, 4.5A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-251; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ark
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity:N Channel; Continuous Dr
***et
Trans MOSFET N-CH 30V 35A 3-Pin(3+Tab) TO-251
***ronik
N-CH 30V 35A 11mOhm TO251-3 RoHSconf
***nell
MOSFET, N CH, 35A, 30V, PG-TO251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0088ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 38W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 35A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
***et
Transistor MOSFET N-CH 600V 1.8A 3-Pin TO-251 T/R
***ment14 APAC
MOSFET, N, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-251; No. of Pins:3; Current Id Max:1.8A; Package / Case:TO-251; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
Zener-Protected SuperMESH3 Power MOSFETs
STMicroelectronics new SuperMESH3™ Power MOSFETs are obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly down, special attention has been taken to ensure that these MOSFETs have a very good dynamic performance coupled with a very large avalanche capability for the most demanding switching applications. SuperMESH3™ Power MOSFETs now come in voltages up to 1200V.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
型号 制造商 描述 库存 价格
STU3N62K3
DISTI # 31976754		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		4873
  • 48:$0.2125
STU3N62K3
DISTI # 497-12695-5-ND		STMicroelectronicsMOSFET N-CH 620V 2.7A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 5025:$0.4818
  • 2550:$0.5071
  • 525:$0.6883
  • 150:$0.8332
  • 75:$1.0143
  • 10:$1.0690
  • 1:$1.2000
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube - Rail/Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 30000:$0.4399
  • 18000:$0.4489
  • 12000:$0.4699
  • 6000:$0.4919
  • 3000:$0.5169
STU3N62K3
DISTI # STU3N62K3		STMicroelectronicsTrans MOSFET N-CH 620V 2.7A 3-Pin(3+Tab) IPAK Tube (Alt: STU3N62K3)
RoHS: Compliant
Min Qty: 75
Container: Tube		Europe - 0
  • 750:€0.1999
  • 450:€0.2159
  • 300:€0.2339
  • 150:€0.2549
  • 75:€0.3119
STU3N62K3
DISTI # 57P2562		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, TO-251,Transistor Polarity:N Channel,Continuous Drain Current Id:2.7A,Drain Source Voltage Vds:620V,On Resistance Rds(on):2.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.75V,MSL:- RoHS Compliant: Yes0
  • 10000:$0.4490
  • 2500:$0.4630
  • 1000:$0.5730
  • 500:$0.6560
  • 100:$0.7420
  • 10:$0.9660
  • 1:$1.1300
STU3N62K3
DISTI # 511-STU3N62K3		STMicroelectronicsMOSFET N-Ch, 620V-2.2ohms 2.7A
RoHS: Compliant		5980
  • 1:$1.1400
  • 10:$0.9660
  • 100:$0.7420
  • 500:$0.6560
  • 1000:$0.5180
  • 3000:$0.4590
  • 9000:$0.4420
STU3N62K3STMicroelectronics 125
    STU3N62K3
    DISTI # STU3N62K3    		STMicroelectronicsTransistor: N-MOSFET,unipolar,620V,1.7A,45W,IPAK152
    • 300:$0.2800
    • 75:$0.3000
    • 25:$0.3400
    • 5:$0.4200
    • 1:$0.6500
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK
    RoHS: Compliant    		74
    • 24000:$0.6450
    • 9000:$0.6660
    • 3000:$0.6920
    • 1000:$0.7810
    • 500:$0.9890
    • 100:$1.1200
    • 10:$1.4600
    • 1:$1.7200
    STU3N62K3STMicroelectronicsN-channel 620V, 2.2, 2.7A Power MOSFET2050
    • 1:$0.2900
    • 100:$0.2700
    • 500:$0.2500
    • 1000:$0.2300
    STU3N62K3
    DISTI # 2098356    		STMicroelectronicsMOSFET, N CH, 620V, 2.7A, IPAK74
    • 500:£0.4510
    • 250:£0.4810
    • 100:£0.5090
    • 25:£0.6630
    • 5:£0.7380
    图片 型号 描述
    NCP1608BDR2G

    Mfr.#: NCP1608BDR2G

    OMO.#: OMO-NCP1608BDR2G

    		 Power Factor Correction - PFC COST EFFECT PWR FACT CONT
    ZMM5256B

    Mfr.#: ZMM5256B

    OMO.#: OMO-ZMM5256B

    		 Zener Diodes 0.5W 30V 5%
    STFU24N60M2

    Mfr.#: STFU24N60M2

    OMO.#: OMO-STFU24N60M2

    		 MOSFET N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package
    ATL432BIDBZR

    Mfr.#: ATL432BIDBZR

    OMO.#: OMO-ATL432BIDBZR

    		 Voltage References voltage regulator
    STD10N60M2

    Mfr.#: STD10N60M2

    OMO.#: OMO-STD10N60M2

    		 MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh M2
    NCP1397ADR2G

    Mfr.#: NCP1397ADR2G

    OMO.#: OMO-NCP1397ADR2G

    		 Switching Controllers NCP1397A
    0659P5000-13

    Mfr.#: 0659P5000-13

    OMO.#: OMO-0659P5000-13

    		 Cartridge Fuses 5A, 250V, 5X20MM AXIAL
    REA101M1HBK-0811P

    Mfr.#: REA101M1HBK-0811P

    OMO.#: OMO-REA101M1HBK-0811P-1130

    		 Aluminum Electrolytic Capacitors - Leaded 50V 100uF 20% 8x11.5mm
    STFU24N60M2

    Mfr.#: STFU24N60M2

    OMO.#: OMO-STFU24N60M2-STMICROELECTRONICS

    		 MOSFET N-CH 600V 18A TO-220FP
    STD10N60M2

    Mfr.#: STD10N60M2

    OMO.#: OMO-STD10N60M2-STMICROELECTRONICS

    		 MOSFET N-CH 600V DPAK
    可用性
    库存:
    Available
    订购:
    1988
    输入数量:
    STU3N62K3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$1.14
    US$1.14
    10
    US$0.97
    US$9.66
    100
    US$0.74
    US$74.20
    500
    US$0.66
    US$328.00
    1000
    US$0.52
    US$518.00
    3000
    US$0.46
    US$1 377.00
    9000
    US$0.44
    US$3 978.00
    24000
    US$0.43
    US$10 272.00
    由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
    从...开始
    最新产品
    • STEVAL-SPIN3201 BLDC Controller Board
      STEVAL-SPIN3201 BLDC Controller Board
      STMicroelectronics' STEVAL-SPIN3201 board is a three-phase brushless DC motor driver board based on the STSPIN32F0 and STD140N6F7 MOSFETs.
    • STUSB4500 USB PD Controller
      STUSB4500 USB PD Controller
      STMicroelectronics' STUSB4500 is a USB power delivery controller that addresses sink devices.
    • S2-LPQTR RF Transceiver
      S2-LPQTR RF Transceiver
      STMicroelectronics' S2-LPQTR RF transceiver is designed for prolonged battery lifetime in smart home, smart city, and smart industry applications.
    • Compare STU3N62K3
      Compare STU3N62K3
      STU3N45K3 vs STU3N62K3 vs STU3N65M6
    • L3GD20 MEMS Motion Sensors
      L3GD20 MEMS Motion Sensors
      STMicroelectronics' L3GD20 MEMS motion sensors are low power three-axis angular rate sensors capable of operating in a temperature range of -40°C to 85°C.
    • 2nd Generation SLLIMM Modules
      2nd Generation SLLIMM Modules
      STMicroelectronics' second series of small low-loss intelligent molded module (SLLIMM) provides a compact, high performance AC motor drive in a simple, rugged design.
    More Newest Products
    Top