STGP20H60DF

STGP20H60DF
Mfr. #:
STGP20H60DF
制造商:
STMicroelectronics
描述:
IGBT Transistors 600V 20A High Speed Trench Gate IGBT
生命周期:
制造商新产品。
数据表:
STGP20H60DF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
STGP20H60DF 更多信息 STGP20H60DF Product Details
产品属性
属性值
制造商:
意法半导体
产品分类:
IGBT晶体管
RoHS:
Y
技术:
包装/案例:
TO-220-3
安装方式:
通孔
配置:
单身的
集电极-发射极电压 VCEO 最大值:
600 V
集电极-发射极饱和电压:
2 V
最大栅极发射极电压:
20 V
25 C 时的连续集电极电流:
40 A
Pd - 功耗:
167 W
最低工作温度:
- 55 C
最高工作温度:
+ 175 C
系列:
STGP20H60DF
打包:
管子
品牌:
意法半导体
栅极-发射极漏电流:
250 nA
产品类别:
IGBT晶体管
出厂包装数量:
1000
子类别:
IGBT
单位重量:
0.081130 oz
Tags
STGP2, STGP, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 40A 100000mW 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
600 V, 20 A high speed trench gate field-stop IGBT
***icroelectronics
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
***ical
Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-220AB Tube
***ark
Igbt, 600V, 40A, 175Deg C, 167W Rohs Compliant: Yes
***icroelectronics SCT
Short-circuit rugged IGBT, TO-220, Tube
*** Electronic Components
IGBT Transistors 600V 20A High Speed Trench Gate IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
***et
STMICROELECTRONICS STGP20V60DF
***ical
Trans IGBT Chip N-CH 600V 40A 130000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
STGP19NC60HD Series 600 V 19 A Very Fast IGBT Flange Mount - TO-220
***el Electronic
STMICROELECTRONICS STGP19NC60HD IGBT Single Transistor, 40 A, 2.5 V, 130 W, 600 V, TO-220, 3 Pins
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
19 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 19A TO-220; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 130W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; O
***ure Electronics
STGP19NC60SD Series 600 V 40 A Very Fast IGBT Flange Mount - TO-220
***ical
Trans IGBT Chip N-CH 600V 40A 125000mW 3-Pin(3+Tab) TO-220AB Tube
***ource
N-channel 600V - 20A - TO-220 - medium frequency PowerMESH" IGBT
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***icroelectronics
20 A, 600 V fast IGBT with Ultrafast diode
***ical
Trans IGBT Chip N-CH 650V 30A 105000mW Automotive 3-Pin(3+Tab) TO-220 Tube
***ark
IGBT Single Transistor, 15 A, 1.65 V, 105 W, 650 V, TO-220, 3
***ure Electronics
IKP15N65H5 Series 650 V 30 A Through Hole DuoPack IGBT - PG-TO220-3
***p One Stop
650V DuoPack IGBT and Diode High speed switching series fifth generation
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 105W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
High Speed 650 V, 15 A hard-switching TRENCHSTOPTM IGBT5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***p One Stop
Trans IGBT Chip N-CH 650V 30A 105000mW 3-Pin(3+Tab) TO-220 Tube
***nell
IGBT, 650V, 15A, TO220-3; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 105W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***et
Trans IGBT Chip N-CH 600V 36A 3-Pin(3+Tab) TO-220
***i-Key
IGBT 600V 36A 178W TO220-3
***i-Key Marketplace
IGBT, 36A, 600V, N-CHANNEL
***el Nordic
Contact for details
型号 制造商 描述 库存 价格
STGP20H60DF
DISTI # 30593239
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
745
  • 500:$2.0017
  • 100:$2.2950
  • 50:$2.3843
  • 10:$2.8942
  • 8:$3.5955
STGP20H60DF
DISTI # 497-13582-5-ND
STMicroelectronicsIGBT 600V 40A 167W TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
261In Stock
  • 5000:$1.3580
  • 2500:$1.3750
  • 500:$1.7824
  • 100:$2.1694
  • 50:$2.5462
  • 10:$2.6990
  • 1:$3.0000
STGP20H60DF
DISTI # V36:1790_06560705
STMicroelectronicsTrans IGBT Chip N-CH 600V 20A 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
    STGP20H60DF
    DISTI # STGP20H60DF
    STMicroelectronicsTrans IGBT Chip N-CH 650V 40A 3-Pin TO-220 Tube (Alt: STGP20H60DF)
    RoHS: Compliant
    Min Qty: 50
    Container: Tube
    Europe - 0
    • 500:€1.0329
    • 300:€1.1019
    • 200:€1.1309
    • 100:€1.2259
    • 50:€1.4909
    STGP20H60DF
    DISTI # STGP20H60DF
    STMicroelectronicsTrans IGBT Chip N-CH 650V 40A 3-Pin TO-220 Tube - Rail/Tube (Alt: STGP20H60DF)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tube
    Americas - 0
    • 5000:$1.1900
    • 10000:$1.1900
    • 2000:$1.2900
    • 3000:$1.2900
    • 1000:$1.3900
    STGP20H60DF
    DISTI # 89W1470
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 5000:$1.2700
    • 2500:$1.3000
    • 1000:$1.6100
    • 500:$1.8000
    • 100:$1.9400
    • 10:$2.4200
    • 1:$2.8500
    STGP20H60DF
    DISTI # 511-STGP20H60DF
    STMicroelectronicsIGBT Transistors 600V 20A High Speed Trench Gate IGBT
    RoHS: Compliant
    986
    • 1:$2.8500
    • 10:$2.4200
    • 100:$1.9400
    • 500:$1.6900
    • 1000:$1.4000
    • 2000:$1.3100
    • 5000:$1.2600
    STGP20H60DFSTMicroelectronics 550
      STGP20H60DF
      DISTI # XSFP00000168029
      STMicroelectronics 
      RoHS: Compliant
      800 in Stock0 on Order
      • 800:$1.0800
      • 200:$1.1900
      图片 型号 描述
      MJE15030G

      Mfr.#: MJE15030G

      OMO.#: OMO-MJE15030G

      Bipolar Transistors - BJT 8A 150V 50W NPN
      MJE15031

      Mfr.#: MJE15031

      OMO.#: OMO-MJE15031

      Bipolar Transistors - BJT PNP 120Vcbo 120Vceo 5.0Vebo 8.0A 2.0W
      TIP125

      Mfr.#: TIP125

      OMO.#: OMO-TIP125

      Darlington Transistors PNP Power Darlington
      MC7805ACTG

      Mfr.#: MC7805ACTG

      OMO.#: OMO-MC7805ACTG

      Linear Voltage Regulators 5V 1A Positive
      L7905ACV

      Mfr.#: L7905ACV

      OMO.#: OMO-L7905ACV

      Linear Voltage Regulators 5.0V 1.5A Negative
      MJE15031

      Mfr.#: MJE15031

      OMO.#: OMO-MJE15031-ON-SEMICONDUCTOR

      TRANS PNP 150V 8A TO220AB
      TIP125

      Mfr.#: TIP125

      OMO.#: OMO-TIP125-STMICROELECTRONICS

      TRANS PNP DARL 60V 5A TO-220
      MC7805ACTG

      Mfr.#: MC7805ACTG

      OMO.#: OMO-MC7805ACTG-ON-SEMICONDUCTOR

      Linear Voltage Regulators 5V 1A Postive
      L7905ACV

      Mfr.#: L7905ACV

      OMO.#: OMO-L7905ACV-STMICROELECTRONICS

      IC REG LINEAR -5V 1.5A TO220AB
      MJE15030G

      Mfr.#: MJE15030G

      OMO.#: OMO-MJE15030G-ON-SEMICONDUCTOR

      Bipolar Transistors - BJT 8A 150V 50W NPN
      可用性
      库存:
      986
      订购:
      2969
      输入数量:
      STGP20H60DF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格(美元)
      数量
      单价
      小计金额
      1
      US$2.85
      US$2.85
      10
      US$2.42
      US$24.20
      100
      US$1.94
      US$194.00
      500
      US$1.69
      US$845.00
      1000
      US$1.40
      US$1 400.00
      2000
      US$1.31
      US$2 620.00
      5000
      US$1.26
      US$6 300.00
      由于2021年半导体供不应求,低于2021年之前的正常价格,请发询价确认。
      从...开始
      最新产品
      • L6470 dSPIN Motor Driver
        STMicro's L6470 dSPIN motor driver has the ability to allow a single MCU to control more than one device and reduces resonance, noise, and vibration.
      • Compare STGP20H60DF
        STGP20H60DF vs STGP20M65DF2 vs STGP20NB37LZ
      • Solar Battery Charger
        STMicroelectronics' solar battery charger consists of a DC-DC step up converter transferring energy from a solar panel to a load by using embedded MPPT algorithm.
      • SPC58 Chorus G Line General Purpose Automotive MCU
        STMicro's SPC58 Chorus G line consists of general-purpose 32-bit Power Architecture® microcontrollers targeting body, networking, and security applications.
      • PowerFLAT™ 8x8 HV
        STMicroelectronics' PowerFLAT HV SMDs are low profile and highly efficient, allowing engineers to design denser and more efficient conversion stages.
      • 600 V Ultrafast Diodes in High Voltage D²PAK
        STMicro's offers rectifiers, STBR, SiC diode, and STTH series housed inside the D²PAK High Voltage helps to solve the standard related to creepage distance.
      Top