CXDM1002N TR

Mfr. #:: CXDM1002N TR
制造商:: Central Semiconductor
描述:: Darlington Transistors MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 1.2W
生命周期:: 制造商新产品。
数据表:: CXDM1002N TR 数据表
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更多信息:: CXDM1002N TR 更多信息

产品属性
属性值

制造商

产品分类: 晶体管 - FET、MOSFET - 单

系列: CXDM10

打包: 卷轴

单位重量: 0.004603 oz

安装方式: 贴片/贴片

包装盒: SOT-89-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 1.2 W

最高工作温度: + 150 C

最低工作温度: - 55 C

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 2 A

Vds-漏-源-击穿电压: 100 V

VGS-th-Gate-Source-Threshold-Voltage: 2.1 V

Rds-On-Drain-Source-Resistance: 140 mOhms

晶体管极性: N通道

典型关断延迟时间: 50 ns

典型开启延迟时间: 32 ns

Qg-门电荷: 6 nC

通道模式: 增强

Tags: CXDM, CXD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CXDM1002N TR 描述

***et: N-Channel Enhancement Mode MOSFET High Voltage 100V 2A 3-Pin SOT-89 T/R

***i-Key: MOSFET N-CH 100V 2A SOT-89

CXDM1002N TR 更多信息

CxxDM Surface Mount Enhancement-Mode MOSFETs: Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Market price

型号	制造商	描述	库存	价格
CXDM1002N TR DISTI # CXDM1002NCT-ND	Central Semiconductor Corp	MOSFET N-CH 100V 2A SOT-89 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2340In Stock	500:$0.6458 100:$0.8328 10:$1.0540 1:$1.1900
CXDM1002N TR DISTI # CXDM1002NDKR-ND	Central Semiconductor Corp	MOSFET N-CH 100V 2A SOT-89 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2340In Stock	500:$0.6458 100:$0.8328 10:$1.0540 1:$1.1900
CXDM1002N TR DISTI # CXDM1002NTR-ND	Central Semiconductor Corp	MOSFET N-CH 100V 2A SOT-89 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	1000:$0.4950
CXDM1002N TR DISTI # CXDM1002N TR	Central Semiconductor Corp	N-Channel Enhancement Mode MOSFET High Voltage 100V 2A 3-Pin SOT-89 T/R - Tape and Reel (Alt: CXDM1002N TR) RoHS: Not Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.3939 4000:$0.3769 6000:$0.3679 10000:$0.3589 20000:$0.3429
CXDM1002N TR DISTI # 610-CXDM1002NTR	Central Semiconductor Corp	MOSFET 100Vds N-Ch Enh FET 20Vgs 2.0A 1.2W 2kV RoHS: Compliant	2237	1:$0.9500 10:$0.7750 100:$0.6460 500:$0.4990 1000:$0.4500 2000:$0.3990 10000:$0.3850

CXDM1002N TR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes