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STGFW30H65FB

STGFW30H65FB
Mfr. #:
STGFW30H65FB
制造商:
STMicroelectronics
描述:
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
生命周期:
制造商新产品。
数据表:
STGFW30H65FB 数据表
交货:
DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:
STGFW30H65FB 更多信息 STGFW30H65FB Product Details
产品属性
属性值
制造商：
意法半导体
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-3PF
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.55 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
60 A
Pd - 功耗：
58 W
最低工作温度：
- 55 C
最高工作温度：
+ 175 C
系列：
STGFW30H65FB
打包：
管子
连续集电极电流 Ic 最大值：
30 A
品牌：
意法半导体
栅极-发射极漏电流：
250 nA
产品类别：
IGBT晶体管
出厂包装数量：
300
子类别：
IGBT
单位重量：
0.245577 oz
Tags
STGFW30, STGFW3, STGFW, STGF, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 60A 58000mW 3-Pin(3+Tab) TO-3PF Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***S
French Electronic Distributor since 1988
***ure Electronics
STGP30M65DF2: 650 V 60 A 258 W Trench Gate Field-Stop IGBT - TO-220AB
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-220AB Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
***el Electronic
STMICROELECTRONICS STGP30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-220, 3 Pins
***nell
IGBT, SINGLE, 650V, 60A, TO-220-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pi
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***icroelectronics
Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 600V 60A 260W 3-Pin(3+Tab) TO-3P Tube
***ark
Transistor, Igbt, 600V, 60A, To-3P Rohs Compliant: Yes
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
***(Formerly Allied Electronics)
IGBT 600V 30A Trench Field-Stop TO-3P
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
型号 制造商 描述 库存 价格
STGFW30H65FB
DISTI # 497-15123-5-ND		STMicroelectronicsIGBT 650V 60A 58W TO3PF
RoHS: Compliant
Min Qty: 1
Container: Tube		291In Stock
  • 1020:$1.8081
  • 510:$2.1439
  • 120:$2.5184
  • 30:$2.9060
  • 1:$3.4200
STGFW30H65FB
DISTI # STGFW30H65FB		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube - Rail/Tube (Alt: STGFW30H65FB)
RoHS: Compliant
Min Qty: 600
Container: Tube		Americas - 0
  • 600:$1.7900
  • 1200:$1.6900
  • 1800:$1.5900
  • 3000:$1.5900
  • 6000:$1.4900
STGFW30H65FB
DISTI # STGFW30H65FB		STMicroelectronicsTrans IGBT Chip N-CH 650V 60A 3-Pin TO-3PF Tube (Alt: STGFW30H65FB)
RoHS: Compliant
Min Qty: 30
Container: Tube		Europe - 0
  • 30:€1.6900
  • 60:€1.6900
  • 120:€1.5900
  • 180:€1.4900
  • 300:€1.3900
STGFW30H65FB
DISTI # 511-STGFW30H65FB		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
RoHS: Compliant		0
  • 600:$2.0400
  • 1200:$1.7200
  • 3000:$1.6300
STGFW30H65FBSTMicroelectronics 300
    STGFW30H65FB
    DISTI # IGBT1872    		STMicroelectronicsIGBT 650V 30A TO-3PFStock DE - 0Stock HK - 0Stock US - 0
    • 600:$1.8200
    STGFW30H65FBSTMicroelectronicsInsulated Gate Bipolar Transistor
    RoHS: Compliant    		Europe - 600
      图片 型号 描述
      STGFW30V60DF

      Mfr.#: STGFW30V60DF

      OMO.#: OMO-STGFW30V60DF

      		 IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
      STGFW30V60F

      Mfr.#: STGFW30V60F

      OMO.#: OMO-STGFW30V60F

      		 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
      STGFW30H65FB

      Mfr.#: STGFW30H65FB

      OMO.#: OMO-STGFW30H65FB

      		 IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
      STGFW30NC60V

      Mfr.#: STGFW30NC60V

      OMO.#: OMO-STGFW30NC60V

      		 IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
      STGFW35HF60W

      Mfr.#: STGFW35HF60W

      OMO.#: OMO-STGFW35HF60W-STMICROELECTRONICS

      		 IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
      STGFW30NC60V

      Mfr.#: STGFW30NC60V

      OMO.#: OMO-STGFW30NC60V-STMICROELECTRONICS

      		 IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
      STGFW30H65FB

      Mfr.#: STGFW30H65FB

      OMO.#: OMO-STGFW30H65FB-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGFW30V60DF

      Mfr.#: STGFW30V60DF

      OMO.#: OMO-STGFW30V60DF-STMICROELECTRONICS

      		 IGBT Transistors IGBT & Power Bipola
      STGFW30V60F

      Mfr.#: STGFW30V60F

      OMO.#: OMO-STGFW30V60F-STMICROELECTRONICS

      		 IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop
      可用性
      库存:
      Available
      订购:
      4000
      输入数量:
      STGFW30H65FB的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      600
      US$2.04
      US$1 224.00
      1200
      US$1.72
      US$2 064.00
      2700
      US$1.63
      US$4 401.00
      5100
      US$1.57
      US$8 007.00
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