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BSD214SNL6327

BSD214SNL6327
Mfr. #:
BSD214SNL6327
制造商:
Rochester Electronics, LLC
描述:
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
生命周期:
制造商新产品。
数据表:
BSD214SNL6327 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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ECAD Model:
产品属性
属性值
制造商
英飞凌
产品分类
FET - 单
Tags
BSD214S, BSD214, BSD21, BSD2, BSD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 1.5A 6-Pin SOT-363 T/R
***ponent Stockers USA
1500 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
***i-Key
SMALL SIGNAL N-CHANNEL MOSFET
***p One Stop Global
Trans MOSFET N/P-CH 20V 0.95A/0.53A Automotive 6-Pin SOT-363 T/R
***ponent Stockers USA
950 mA 20 V 2 CHANNEL N AND P-CHANNEL Si SMALL SIGNAL MOSFET
***el Electronic
CAP CER 3PF 25V C0G/NP0 01005
***S
new, original packaged
***el Nordic
Contact for details
***ical
Trans MOSFET P-CH 30V 1.5A Automotive 6-Pin SOT-363 T/R
*** Electronic Components
MOSFET P-CH 30V 1.5A SOT363
***el Electronic
CAP CER 3.1PF 25V C0G/NP0 01005
***i-Key
P-CHANNEL MOSFET
***el Nordic
Contact for details
***p One Stop Global
Trans MOSFET P-CH 20V 0.39A Automotive 6-Pin SOT-363 T/R
***ponent Stockers USA
390 mA 20 V 2 CHANNEL P-CHANNEL Si SMALL SIGNAL MOSFET
***i-Key
MOSFET 2P-CH 20V 0.39A SOT363
***el Electronic
CAP CER 3PF 25V C0G/NP0 01005
***el Nordic
Contact for details
***et Japan
Transistor MOSFET Array Dual N-CH 60V 0.3A 6-Pin SOT-363 T/R
***ure Electronics
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS™ Small Signal Mosfet - SOT-363
***ment14 APAC
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
***th Star Micro
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
***ineon
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
***emi
Dual N−Channel Power MOSFET with ESD Protection 60V, 295mA, 1.6Ω
***et
Transistor MOSFET Array Dual N-CH 60V 300mA 6-Pin SC-88 T/R
***ark
Mosfet, Aec-Q101, Dual N-Ch, 60V, Sot-363; Channel Type:n Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:295Ma; No. Of Pins:6Pins; Product Range:- Rohs Compliant: Yes
***nell
MOSFET, AUTO, DUAL N-CH, 60V, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 295mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 250mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
型号 制造商 描述 库存 价格
BSD214SN L6327
DISTI # BSD214SNL6327INTR-ND		Infineon Technologies AGMOSFET N-CH 20V 1.5A SOT-363
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    BSD214SN L6327
    DISTI # BSD214SNL6327INCT-ND    		Infineon Technologies AGMOSFET N-CH 20V 1.5A SOT-363
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      BSD214SN L6327
      DISTI # BSD214SNL6327INDKR-ND      		Infineon Technologies AGMOSFET N-CH 20V 1.5A SOT-363
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        BSD214SNL6327
        DISTI # BSD214SNL6327        		Infineon Technologies AGTrans MOSFET N-CH 20V 1.5A 6-Pin SOT-363 T/R - Bulk (Alt: BSD214SNL6327)
        RoHS: Not Compliant
        Min Qty: 6250
        Container: Bulk        		Americas - 0
        • 62500:$0.0508
        • 31250:$0.0517
        • 18750:$0.0536
        • 12500:$0.0556
        • 6250:$0.0576
        BSD214SNL6327Infineon Technologies AGSmall Signal Field-Effect Transistor, 1.5A I(D), 20V, N-Channel, MOSFET
        RoHS: Compliant        		47600
        • 500:$0.0500
        • 1000:$0.0500
        • 1:$0.0600
        • 25:$0.0600
        • 100:$0.0600
        图片 型号 描述
        BSD214SNH6327XTSA1

        Mfr.#: BSD214SNH6327XTSA1

        OMO.#: OMO-BSD214SNH6327XTSA1

        		 MOSFET SMALL SIGNAL+P-CH
        BSD214SN H6327

        Mfr.#: BSD214SN H6327

        OMO.#: OMO-BSD214SN-H6327

        		 MOSFET SMALL SIGNAL+P-CH
        BSD214

        Mfr.#: BSD214

        OMO.#: OMO-BSD214-1190

        		 INSTOCK
        BSD214SN

        Mfr.#: BSD214SN

        OMO.#: OMO-BSD214SN-1190

        		 全新原装
        BSD214SN H6327

        Mfr.#: BSD214SN H6327

        OMO.#: OMO-BSD214SN-H6327-1190

        		 MOSFET SMALL SIGNAL+P-CH
        BSD214SNH6327

        Mfr.#: BSD214SNH6327

        OMO.#: OMO-BSD214SNH6327-1190

        		 - Bulk (Alt: BSD214SNH6327)
        BSD214SNH6327XTSA1

        Mfr.#: BSD214SNH6327XTSA1

        OMO.#: OMO-BSD214SNH6327XTSA1-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 20V 1.5A SOT363
        BSD214SNL6327

        Mfr.#: BSD214SNL6327

        OMO.#: OMO-BSD214SNL6327-1190

        		 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        BSD214SN L6327

        Mfr.#: BSD214SN L6327

        OMO.#: OMO-BSD214SN-L6327-INFINEON-TECHNOLOGIES

        		 IGBT Transistors MOSFET N-Ch 20V 1.5A SOT-363-6
        可用性
        库存:
        Available
        订购:
        2500
        输入数量:
        BSD214SNL6327的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格（美元）
        数量
        单价
        小计金额
        1
        US$0.08
        US$0.08
        10
        US$0.07
        US$0.71
        100
        US$0.07
        US$6.75
        500
        US$0.06
        US$31.90
        1000
        US$0.06
        US$60.00
        从...开始
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