IPB080N03L G

IPB080N03L G
Mfr. #:
IPB080N03L G
制造商:
Infineon Technologies
描述:
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
生命周期:
制造商新产品。
数据表:
IPB080N03L G 数据表
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更多信息:
IPB080N03L G 更多信息
产品属性
属性值
Tags
IPB080N03LG, IPB080N03, IPB080, IPB08, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
型号 制造商 描述 库存 价格
IPB080N03LGATMA1
DISTI # V36:1790_06384816
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
  • 1000000:$0.4172
  • 500000:$0.4175
  • 100000:$0.4562
  • 10000:$0.5296
  • 1000:$0.5421
IPB080N03LGATMA1
DISTI # V72:2272_06384816
Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
0
    IPB080N03LGATMA1
    DISTI # IPB080N03LGATMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 30V 50A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)
    1000In Stock
    • 1000:$0.5421
    IPB080N03LGATMA1
    DISTI # IPB080N03LGATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 30V 50A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    328In Stock
    • 100:$0.8562
    • 10:$1.0980
    • 1:$1.2300
    IPB080N03LGATMA1
    DISTI # IPB080N03LGATMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 30V 50A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IPB080N03LG
      DISTI # IPB080N03L G
      Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: IPB080N03L G)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape and Reel
      Asia - 0
      • 50000:$0.4357
      • 25000:$0.4413
      • 10000:$0.4470
      • 5000:$0.4529
      • 3000:$0.4651
      • 2000:$0.4781
      • 1000:$0.4917
      IPB080N03LG
      DISTI # IPB080N03LG
      Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB080N03LG)
      RoHS: Compliant
      Min Qty: 834
      Container: Bulk
      Americas - 0
        IPB080N03LG
        DISTI # IPB080N03L G
        Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB080N03L G)
        RoHS: Compliant
        Min Qty: 834
        Container: Bulk
        Americas - 0
        • 8340:$0.3809
        • 4170:$0.3879
        • 2502:$0.4009
        • 1668:$0.4159
        • 834:$0.4319
        IPB080N03LGXT
        DISTI # IPB080N03LGATMA1
        Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB080N03LGATMA1)
        RoHS: Compliant
        Min Qty: 1000
        Container: Reel
        Americas - 0
        • 10000:$0.4369
        • 6000:$0.4449
        • 4000:$0.4599
        • 2000:$0.4779
        • 1000:$0.4949
        IPB080N03LGXT
        DISTI # SP000304104
        Infineon Technologies AGTrans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 (Alt: SP000304104)
        RoHS: Compliant
        Min Qty: 1000
        Europe - 0
        • 10000:€0.3909
        • 6000:€0.4219
        • 4000:€0.4569
        • 2000:€0.4979
        • 1000:€0.6089
        IPB080N03L G
        DISTI # 726-IPB080N03LG
        Infineon Technologies AGMOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
        RoHS: Compliant
        1080
        • 1:$1.1300
        • 10:$0.9640
        • 100:$0.7410
        • 500:$0.6540
        • 1000:$0.5170
        • 2000:$0.4580
        • 10000:$0.4410
        IPB080N03LGInfineon Technologies AGPower Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant
        1000
        • 1000:$0.4000
        • 500:$0.4200
        • 100:$0.4300
        • 25:$0.4500
        • 1:$0.4900
        IPB080N03L GInfineon Technologies AGPower Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Not Compliant
        2000
        • 1000:$0.4000
        • 500:$0.4200
        • 100:$0.4300
        • 25:$0.4500
        • 1:$0.4900
        IPB080N03LGATMA1
        DISTI # IPB080N03LGATMA1
        Infineon Technologies AGTransistor: N-MOSFET,unipolar,30V,34A,47W,PG-TO263-3813
        • 100:$0.2646
        • 10:$0.2830
        • 3:$0.3533
        • 1:$0.4100
        图片 型号 描述
        IPB080N03L G

        Mfr.#: IPB080N03L G

        OMO.#: OMO-IPB080N03L-G

        MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
        IPB080N06N G

        Mfr.#: IPB080N06N G

        OMO.#: OMO-IPB080N06N-G

        MOSFET N-Ch 60V 80A D2PAK-2
        IPB080N06N G

        Mfr.#: IPB080N06N G

        OMO.#: OMO-IPB080N06N-G-INFINEON-TECHNOLOGIES

        MOSFET N-CH 60V 80A TO-263
        IPB080N03L

        Mfr.#: IPB080N03L

        OMO.#: OMO-IPB080N03L-1190

        全新原装
        IPB080N03L G

        Mfr.#: IPB080N03L G

        OMO.#: OMO-IPB080N03L-G-1190

        MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3
        IPB080N03LG

        Mfr.#: IPB080N03LG

        OMO.#: OMO-IPB080N03LG-1190

        Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB080N03L G)
        IPB080N03LGATMA1

        Mfr.#: IPB080N03LGATMA1

        OMO.#: OMO-IPB080N03LGATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 50A TO263-3
        IPB080N06NG

        Mfr.#: IPB080N06NG

        OMO.#: OMO-IPB080N06NG-1190

        全新原装
        可用性
        库存:
        Available
        订购:
        3500
        输入数量:
        IPB080N03L G的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        参考价格(美元)
        数量
        单价
        小计金额
        1
        US$0.60
        US$0.60
        10
        US$0.57
        US$5.70
        100
        US$0.54
        US$54.00
        500
        US$0.51
        US$255.00
        1000
        US$0.48
        US$480.00
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