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| 型号 | 制造商 | 描述 | 库存 | 价格 |
|---|---|---|---|---|
| IPB080N03LGATMA1 DISTI # V36:1790_06384816 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 |
|
| IPB080N03LGATMA1 DISTI # V72:2272_06384816 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant | 0 | |
| IPB080N03LGATMA1 DISTI # IPB080N03LGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | 1000In Stock |
|
| IPB080N03LGATMA1 DISTI # IPB080N03LGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 328In Stock |
|
| IPB080N03LGATMA1 DISTI # IPB080N03LGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 50A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB080N03LG DISTI # IPB080N03L G | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R (Alt: IPB080N03L G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel | Asia - 0 |
|
| IPB080N03LG DISTI # IPB080N03LG | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB080N03LG) RoHS: Compliant Min Qty: 834 Container: Bulk | Americas - 0 | |
| IPB080N03LG DISTI # IPB080N03L G | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin TO-263 T/R - Bulk (Alt: IPB080N03L G) RoHS: Compliant Min Qty: 834 Container: Bulk | Americas - 0 |
|
| IPB080N03LGXT DISTI # IPB080N03LGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB080N03LGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 |
|
| IPB080N03LGXT DISTI # SP000304104 | Infineon Technologies AG | Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-263 (Alt: SP000304104) RoHS: Compliant Min Qty: 1000 | Europe - 0 |
|
| IPB080N03L G DISTI # 726-IPB080N03LG | Infineon Technologies AG | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 RoHS: Compliant | 1080 |
|
| IPB080N03L G | Infineon Technologies AG | Power Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 2000 |
|
| IPB080N03LG | Infineon Technologies AG | Power Field-Effect Transistor, 48A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1000 |
|
| IPB080N03LGATMA1 DISTI # IPB080N03LGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,34A,47W,PG-TO263-3 | 813 |
|
| 图片 | 型号 | 描述 |
|---|---|---|
|
Mfr.#: IPB083N10N3GATMA1 OMO.#: OMO-IPB083N10N3GATMA1 |
MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 |
|
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Mfr.#: IPB08CNE8N G OMO.#: OMO-IPB08CNE8N-G |
MOSFET N-Ch 85V 95A D2PAK-2 |
|
Mfr.#: IPB083N15N5LFATMA1 |
MOSFET N-CH 150V 105A TO263-3 |
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|
Mfr.#: IPB08CN10N G |
MOSFET N-CH 100V 95A TO263-3 |
|
Mfr.#: IPB080N03L G OMO.#: OMO-IPB080N03L-G-1190 |
MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB080N03LGATMA1 |
MOSFET N-CH 30V 50A TO263-3 |
|
|
Mfr.#: IPB080N06NG OMO.#: OMO-IPB080N06NG-1190 |
全新原装 |
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|
Mfr.#: IPB081N06L3 OMO.#: OMO-IPB081N06L3-1190 |
全新原装 |
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Mfr.#: IPB083N10N3 G OMO.#: OMO-IPB083N10N3-G-1190 |
MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 |
|
|
Mfr.#: IPB083N10N3GATMA1 |
MOSFET N-CH 100V 80A TO263-3 |