CSD25211W1015

Mfr. #:: CSD25211W1015
描述:: MOSFET P-CH 20V 3.2A 6DSBGA
生命周期:: 制造商新产品。
数据表:: CSD25211W1015 数据表
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更多信息:: CSD25211W1015 更多信息 CSD25211W1015 Product Details

产品属性
属性值

制造商: 德州仪器

产品分类: 晶体管 - FET、MOSFET - 单

系列: CSD25211W1015

打包: 卷轴

单位重量: 0.000060 oz

安装方式: 贴片/贴片

商品名: 场效应管

包装盒: DSBGA-6

技术: 硅

通道数: 1 Channel

配置: 单通道

晶体管型: 1 P-Channel

钯功耗: 1 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 14.2 ns

上升时间: 8.8 ns

VGS-栅极-源极-电压: - 6 V

Id 连续漏极电流: - 3.2 A

Vds-漏-源-击穿电压: - 20 V

VGS-th-Gate-Source-Threshold-Voltage: - 800 mV

Rds-On-Drain-Source-Resistance: 33 mOhms

晶体管极性: P-通道

典型关断延迟时间: 36.9 ns

典型开启延迟时间: 13.6 ns

Qg-门电荷: 3.4 nC

正向跨导最小值: 12 S

Tags: CSD252, CSD25, CSD2, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD25211W1015 描述

***as Instruments: -20-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 33 mOhm, gate ESD protection 6-DSBGA -55 to 150

***et: Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R

CSD25211W1015 更多信息

NexFET P-Channel Power MOSFETs: OMO Electronic NexFET P-Channel Power MOSFETs are designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. These NexFET MOSFETs feature ultra low on-resistance and ultra-low Qg and Qgd as well as a small footprint of 1.0mm x 1.5mm.

TI P-Channel MOSFETs - 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

型号	描述	库存	价格
CSD25211W1015 DISTI # 296-36578-1-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-6-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8375In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
CSD25211W1015 DISTI # 296-36578-2-ND	MOSFET P-CH 20V 3.2A 6DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	15000:$0.1782 6000:$0.1914 3000:$0.2046
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD25211W1015 DISTI # CSD25211W1015	Trans MOSFET N-CH 20V 3.2A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD25211W1015) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1739 6000:$0.1649 12000:$0.1599 18000:$0.1539 30000:$0.1499
CSD25211W1015	P-Channel NexFET&#153,Power MOSFET	5730	1000:$0.1400 750:$0.1500 500:$0.1900 250:$0.2300 100:$0.2500 25:$0.3000 10:$0.3200 1:$0.3600
CSD25211W1015 DISTI # 595-CSD25211W1015	MOSFET PCh NexFET Power MOSFET RoHS: Compliant	786	1:$0.5200 10:$0.4300 100:$0.2640 1000:$0.2040 3000:$0.1740

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