BSC084P03NS3E G

Mfr. #:: BSC084P03NS3E G
制造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
生命周期:: 制造商新产品。
数据表:: BSC084P03NS3E G 数据表
交货:: DHL FedEx Ups TNT EMS
支付:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: OptiMOS P3

打包: 卷轴

部分别名: BSC084P03NS3EGATMA1 BSC084P03NS3EGXT SP000473012

安装方式: 贴片/贴片

商品名: 优化MOS

包装盒: TDSON-8

技术: 硅

通道数: 1 Channel

配置: 单四漏三源

晶体管型: 1 P-Channel

钯功耗: 69 W

最高工作温度: + 150 C

最低工作温度: - 55 C

秋季时间: 8.1 ns

上升时间: 133.5 nS

VGS-栅极-源极-电压: 25 V

Id 连续漏极电流: - 78.6 A

Vds-漏-源-击穿电压: - 30 V

Rds-On-Drain-Source-Resistance: 8.4 mOhms

晶体管极性: P-通道

典型关断延迟时间: 33.3 nS

Qg-门电荷: 43.4 nC

Tags: BSC084P03NS3E, BSC084, BSC08, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

型号	制造商	描述	库存	价格
BSC084P03NS3EGATMA1 DISTI # BSC084P03NS3EGATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 30V 14.9A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$0.4819
BSC084P03NS3EGATMA1 DISTI # BSC084P03NS3EGATMA1	Infineon Technologies AG	Trans MOSFET P-CH 30V 14.9A 8-Pin TDSON EP - Tape and Reel (Alt: BSC084P03NS3EGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.3789 10000:$0.3649 20000:$0.3519 30000:$0.3399 50000:$0.3339
BSC084P03NS3EGATMA1 DISTI # SP000473012	Infineon Technologies AG	Trans MOSFET P-CH 30V 14.9A 8-Pin TDSON EP (Alt: SP000473012) RoHS: Compliant Min Qty: 5000	Europe - 0	5000:€0.6149 10000:€0.5209 20000:€0.4639 30000:€0.4179 50000:€0.3879
BSC084P03NS3E G DISTI # 726-BSC084P03NS3EG	Infineon Technologies AG	MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3 RoHS: Compliant	1421	1:$1.0900 10:$0.9230 100:$0.7090 500:$0.6260 1000:$0.4950
BSC084P03NS3EGATMA DISTI # BSC084P03NS3EGATMA	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-30V,-78.6A,69W,PG-TDSON-8	1000	1:$0.9300 3:$0.8300 10:$0.7500 100:$0.6900

相关产品

图片	型号	描述
	Mfr.#: BSC084P03NS3 G OMO.#: OMO-BSC084P03NS3-G	MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
	Mfr.#: BSC084P03NS3E G OMO.#: OMO-BSC084P03NS3E-G	MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
	Mfr.#: BSC084P03NS3GATMA1 OMO.#: OMO-BSC084P03NS3GATMA1	MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3
	Mfr.#: BSC084P03NS3EGATMA OMO.#: OMO-BSC084P03NS3EGATMA-1190	Transistor: P-MOSFET, unipolar, -30V, -78.6A, 69W, PG-TDSON-8
	Mfr.#: BSC084P03NS3 G OMO.#: OMO-BSC084P03NS3-G-1190	Trans MOSFET P-CH 30V 14.5A 8-Pin TDSON (Alt: BSC084P03NS3 G)
	Mfr.#: BSC084P03NS3EG OMO.#: OMO-BSC084P03NS3EG-1190	全新原装
	Mfr.#: BSC084P03NS3G OMO.#: OMO-BSC084P03NS3G-1190	MOSFET, P-CH, -30V, -78.6A, TDSON
	Mfr.#: BSC084P03NS3GATMA1 , TDM OMO.#: OMO-BSC084P03NS3GATMA1-TDM-1190	全新原装
	Mfr.#: BSC084P03NS3EGATMA1 OMO.#: OMO-BSC084P03NS3EGATMA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 30V 14.9A TDSON-8
	Mfr.#: BSC084P03NS3E G OMO.#: OMO-BSC084P03NS3E-G-317	RF Bipolar Transistors MOSFET P-Ch -30V -78.6A TDSON-8 OptiMOS P3