IPB042N10N3GE818XT

Mfr. #:: IPB042N10N3GE818XT
制造商:: Infineon Technologies
描述:: RF Bipolar Transistors MOSFET N-Ch 100V 100A D2PAK-2
生命周期:: 制造商新产品。
数据表:: IPB042N10N3GE818XT 数据表
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更多信息:: IPB042N10N3GE818XT 更多信息

产品属性
属性值

制造商: 英飞凌科技

产品分类: 晶体管 - FET、MOSFET - 单

系列: IPB042N10

打包: 卷轴

部分别名: IPB042N10N3GE8187ATMA1 SP000939332

单位重量: 0.139332 oz

安装方式: 贴片/贴片

包装盒: TO-252-3

技术: 硅

通道数: 1 Channel

配置: 单身的

晶体管型: 1 N-Channel

钯功耗: 214 W

最高工作温度: + 175 C

最低工作温度: - 55 C

秋季时间: 14 ns

上升时间: 59 ns

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 100 V

Rds-On-Drain-Source-Resistance: 4.2 mOhms

晶体管极性: N通道

典型关断延迟时间: 48 ns

Qg-门电荷: 88 nC

Tags: IPB042N10N3GE, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB042N10N3GE818XT 描述

***i-Key: MOSFET N-CH 100V 100A TO263-3

IPB042N10N3GE818XT 更多信息

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

型号	制造商	描述	库存	价格
IPB042N10N3GE818XT DISTI # 726-IPB042N10N3GEMA1	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 RoHS: Compliant	0	1:$2.7900 10:$2.3700 100:$1.8900 500:$1.6600 1000:$1.3700 2000:$1.2800 5000:$1.2300

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