IRF6678TR1PBF

IRF6678TR1PBF
Mfr. #:
IRF6678TR1PBF
制造商:
Infineon / IR
描述:
MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
生命周期:
制造商新产品。
数据表:
IRF6678TR1PBF 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
贴片/贴片
包装/案例:
DirectFET-MX
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
30 V
Id - 连续漏极电流:
30 A
Rds On - 漏源电阻:
3 mOhms
Vgs - 栅源电压:
20 V
Qg - 门电荷:
43 nC
Pd - 功耗:
89 W
配置:
单身的
打包:
卷轴
高度:
0.7 mm
长度:
6.35 mm
晶体管类型:
1 N-Channel
宽度:
5.05 mm
品牌:
英飞凌/红外
湿气敏感:
是的
产品类别:
MOSFET
出厂包装数量:
1000
子类别:
MOSFET
第 # 部分别名:
SP001525486
单位重量:
0.017637 oz
Tags
IRF6678T, IRF6678, IRF667, IRF66, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MX PKG
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in
***nell
MOSFET, N, DIRECTFET, 30V, MX; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:1.7mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.35V; Case Style:MX; Termination Type:SMD; Base Number:6678; Current, Idm Pulse:240A; Power Dissipation:2.8mW; SMD Marking:2.8; Voltage, Vds:30V; Voltage, Vgs th Max:2.25V; Voltage, Vgs th Min:1.35V
型号 制造商 描述 库存 价格
IRF6678TR1PBF
DISTI # IRF6678TR1PBFTR-ND
Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRF6678TR1PBF
    DISTI # IRF6678TR1PBFCT-ND
    Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IRF6678TR1PBF
      DISTI # IRF6678TR1PBFDKR-ND
      Infineon Technologies AGMOSFET N-CH 30V 30A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IRF6678TR1PBF
        DISTI # 70018852
        Infineon Technologies AG30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE,DIRECTFET MX PKG
        RoHS: Compliant
        0
        • 1000:$2.4300
        • 2000:$2.2300
        IRF6678TR1PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 ***770
        • 405:$2.2077
        • 94:$2.4753
        • 1:$4.0140
        IRF6678TR1PBF
        DISTI # 1436935
        Infineon Technologies AGMOSFET, N, DIRECTFET, 30V, MX
        RoHS: Compliant
        0
        • 500:$3.3100
        • 1000:$3.3100
        • 250:$3.4900
        • 100:$3.6300
        • 10:$4.0000
        • 1:$4.2700
        图片 型号 描述
        IRF6674TRPBF

        Mfr.#: IRF6674TRPBF

        OMO.#: OMO-IRF6674TRPBF

        MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
        IRF6674TR1PBF

        Mfr.#: IRF6674TR1PBF

        OMO.#: OMO-IRF6674TR1PBF

        MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
        IRF6678TR1PBF

        Mfr.#: IRF6678TR1PBF

        OMO.#: OMO-IRF6678TR1PBF

        MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
        IRF6678

        Mfr.#: IRF6678

        OMO.#: OMO-IRF6678-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 30A DIRECTFET
        IRF6678TR1PBF

        Mfr.#: IRF6678TR1PBF

        OMO.#: OMO-IRF6678TR1PBF-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 30A DIRECTFET
        IRF6678TR1

        Mfr.#: IRF6678TR1

        OMO.#: OMO-IRF6678TR1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 30V 30A DIRECTFET
        IRF6674TRPBF

        Mfr.#: IRF6674TRPBF

        OMO.#: OMO-IRF6674TRPBF-INFINEON-TECHNOLOGIES

        IGBT Transistors MOSFET 60V 1 N-CH HEXFET 11mOhms 24nC
        IRF6674TR1PBF

        Mfr.#: IRF6674TR1PBF

        OMO.#: OMO-IRF6674TR1PBF-INFINEON-TECHNOLOGIES

        IGBT Transistors MOSFET MOSFT 60V 67A 11.2mOhm 25nC Qg
        IRF6678TRPBF

        Mfr.#: IRF6678TRPBF

        OMO.#: OMO-IRF6678TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 30V N-CH HEXFET 2.2mOhms 43nC
        可用性
        库存:
        Available
        订购:
        5500
        输入数量:
        IRF6678TR1PBF的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
        从...开始
        最新产品
        • TinyScreen+ Processor Board
          TinyScreen+ is TinyCircuits' processor board based on the TinyScreen shield with an added Atmel SAMD21 processor and Microchip MCP73831 battery charger.
        • ASDA-B2 Series AC Servo Drive and Motor
          Delta's ASDA-B2 series servo motors and drives meet the requirements for general-purpose machine control applications.
        • TurboFan DC Series
          Built with an integral stationary blade, a single rotor, and an aerodynamic casing these fans are designed for high pressure performance while being efficient.
        • Compare IRF6678TR1PBF
          IRF6678TR1 vs IRF6678TR1PBF vs IRF6678TRPBF
        • VFD-EL Series Micro AC Drives
          Delta IA’s VFD-EL series micro AC drives with built-in EMI filters and RFI switches feature easy DC bus sharing for side-by-side installation.
        • High Power Cooling Fans
          NMB's R and F Series high power cooling fans achieve new benchmarks for airflow performance and efficiency.
        Top