TGF2929-HM

Mfr. #:: TGF2929-HM
制造商:: Qorvo
描述:: RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN
生命周期:: 制造商新产品。
数据表:: TGF2929-HM 数据表
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ECAD Model:
更多信息:: TGF2929-HM 更多信息

产品属性
属性值

制造商

产品分类: 晶体管 - FET、MOSFET - 单

系列: 转化生长因子

打包: 胡扯

部分别名: 1135635

安装方式: 贴片/贴片

工作温度范围: - 40 C to + 85 C

包装盒: Flange Ceramic-2

技术: 氮化镓碳化硅

配置: 单身的

晶体管型: HEMT

获得: 17.4 dB

输出功率: 132 W

钯功耗: 140 W

最高工作温度: + 85 C

最低工作温度: - 40 C

工作频率: DC to 3.5 GHz

Id 连续漏极电流: 7.2 A

Vds-漏-源-击穿电压: 50 V

晶体管极性: N通道

开发套件: TGF2929-HM EVB1

VGS-栅极-源极击穿电压: - 2.8 V

Tags: TGF292, TGF29, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2929-HM 描述

***W: RF Power Transistor, DC to 3.5 GHz, 100 W, 17.4 dB, 28 V, GaN, NI-360 Hermetic

***hardson RFPD: RF POWER TRANSISTOR

TGF2929-HM 更多信息

TGF2929 GaN RF Power Transistors: Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

型号	制造商	描述	库存	价格
TGF2929-HM DISTI # 772-TGF2929-HM	Qorvo	RF JFET Transistors DC-3.5GHz 100W 28V Gain 17.4dB GaN RoHS: Compliant	0	25:$338.4400
TGF2929-HM-EVB DISTI # 772-TGF2929-HM-EVB	Qorvo	RF Development Tools RoHS: Compliant	0	1:$875.0000

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	Mfr.#: TGF2979-SM-EVB OMO.#: OMO-TGF2979-SM-EVB-1152	RF Development Tools
	Mfr.#: TGF2929-HM-EVB OMO.#: OMO-TGF2929-HM-EVB-1152	RF Development Tools
	Mfr.#: TGF2960 OMO.#: OMO-TGF2960-1190	全新原装