TGF2160

Mfr. #:: TGF2160
制造商:: Qorvo
描述:: RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
生命周期:: 制造商新产品。
数据表:: TGF2160 数据表
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ECAD Model:
更多信息:: TGF2160 更多信息

产品属性
属性值

制造商: TriQuint (Qorvo)

产品分类: 晶体管 - FET、MOSFET - 单

打包: 托盘

部分别名: 1098617

安装方式: 贴片/贴片

工作温度范围: - 65 C to + 150 C

技术: 砷化镓

配置: 双重的

晶体管型: pHEMT

获得: 10.4 dB

钯功耗: 5.6 W

最高工作温度: + 150 C

最低工作温度: - 65 C

工作频率: 20 GHz

Id 连续漏极电流: 517 mA

Vds-漏-源-击穿电压: 12 V

正向跨导最小值: 619 mS

VGS-栅极-源极击穿电压: - 7 V

P1dB-压缩点: 32.5 dBm

Tags: TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2160 更多信息

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2160 1600µm Discrete GaAs pHEMT: Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Market price

型号	制造商	描述	库存	价格
TGF2160 DISTI # 772-TGF2160	Qorvo	RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE RoHS: Compliant	0	100:$17.2700 300:$16.1400 500:$15.0900

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