TGF2929-FS

TGF2929-FS
Mfr. #:
TGF2929-FS
制造商:
Qorvo
描述:
RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
生命周期:
制造商新产品。
数据表:
TGF2929-FS 数据表
交货:
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ECAD Model:
更多信息:
TGF2929-FS 更多信息
产品属性
属性值
制造商:
科沃
产品分类:
射频 MOSFET 晶体管
RoHS:
Y
晶体管极性:
N通道
技术:
氮化镓碳化硅
Id - 连续漏极电流:
12 A
Vds - 漏源击穿电压:
28 V
获得:
14 dB
输出功率:
107 W
打包:
托盘
工作频率:
3.5 GHz
类型:
射频功率MOSFET
品牌:
科沃
湿气敏感:
是的
Pd - 功耗:
144 W
产品类别:
射频 MOSFET 晶体管
出厂包装数量:
25
子类别:
MOSFET
Vgs - 栅源电压:
145 V
Vgs th - 栅源阈值电压:
- 2.9 V
第 # 部分别名:
1123716
Tags
TGF2929-F, TGF292, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 100 W, 14 dB, 28 V, GaN, Flangeless
TGF2929 GaN RF Power Transistors
Qorvo TGF2929 GaN RF Power Transistors are discrete GaN on SiC HEMTs that operate from DC to 3.5GHz. They are constructed with the QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
型号 制造商 描述 库存 价格
TGF2929-FS
DISTI # 772-TGF2929-FS
QorvoRF MOSFET Transistors DC-3.5GHz 100W 28V GaN
RoHS: Compliant
23
  • 1:$351.0000
  • 25:$316.7800
TGF2929-FS/FL, 3.1-3.5GHZ EVB
DISTI # 772-TGF2929-FS/FL-EV
QorvoRF Development Tools DC-3.5GHz 100W Eval Board
RoHS: Compliant
1
  • 1:$875.0000
1123716
DISTI # TGF2929-FS
QorvoRF POWER TRANSISTOR
RoHS: Compliant
10
  • 1:$90.0000
图片 型号 描述
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OMO.#: OMO-TGF2977-SM

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Mfr.#: TGF2955

OMO.#: OMO-TGF2955

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Mfr.#: TGF2929-HM

OMO.#: OMO-TGF2929-HM-318

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Mfr.#: TGF2957

OMO.#: OMO-TGF2957-318

RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
TGF2929-FS

Mfr.#: TGF2929-FS

OMO.#: OMO-TGF2929-FS-319

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Mfr.#: TGF2979-SM-EVB

OMO.#: OMO-TGF2979-SM-EVB-1152

RF Development Tools
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Mfr.#: TGF2942

OMO.#: OMO-TGF2942-1152

RF JFET Transistors DC-25GHz 2Watt NF 1.2dB GaN
TGF2960

Mfr.#: TGF2960

OMO.#: OMO-TGF2960-1190

全新原装
TGF2960-SD.

Mfr.#: TGF2960-SD.

OMO.#: OMO-TGF2960-SD--1190

全新原装
可用性
库存:
Available
订购:
2000
输入数量:
TGF2929-FS的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
25
US$316.78
US$7 919.50
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