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FDMS3606S

FDMS3606S
Mfr. #:
FDMS3606S
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET DUAL N-CH. ER TRENCH MO
生命周期:
制造商新产品。
数据表:
FDMS3606S 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
贴片/贴片
包装/案例：
Power-56-8
通道数：
2 Channel
晶体管极性：
N通道
配置：
双重的
商品名：
动力战壕
打包：
卷轴
高度：
1.1 mm
长度：
6 mm
系列：
FDMS3606S
晶体管类型：
2 N-Channel
宽度：
5 mm
品牌：
安森美半导体/飞兆半导体
产品类别：
MOSFET
出厂包装数量：
3000
子类别：
MOSFET
单位重量：
0.006032 oz
Tags
FDMS360, FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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***nell
MOSFET, N CH, 30V, 28A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:27W; Transistor Case Style:Power 56; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
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Contact for details
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***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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*** Electronic Components
MOSFET DUAL N-CH. ER TRENCH MO
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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MOSFET 30V 35A 36W 6.0mohm @ 10V
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N-Ch PowerPAK SO-8 BWL 30V 6mohm@10V
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Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:35A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.048ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:20V; Power Dissipation, Pd:4.2W ;RoHS Compliant: Yes
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Single N-Channel 30 V 0.0079 Ohm 41.7 W SMT Power Mosfet - PowerPAK-SO-8
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***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.0065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 30A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:41.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
型号 制造商 描述 库存 价格
FDMS3606S
DISTI # FDMS3606SCT-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    FDMS3606S
    DISTI # FDMS3606SDKR-ND    		ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      FDMS3606S
      DISTI # FDMS3606STR-ND      		ON SemiconductorMOSFET 2N-CH 30V 13A/27A PWR56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 3000:$0.7084
      FDMS3606S
      DISTI # FDMS3606S      		ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Asia - 3000
      • 3000:$0.8501
      • 6000:$0.8174
      • 9000:$0.7871
      • 15000:$0.7590
      • 30000:$0.7328
      • 75000:$0.7084
      • 150000:$0.6968
      FDMS3606S
      DISTI # FDMS3606S      		ON SemiconductorTrans MOSFET N-CH 30V 13A/27A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS3606S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 3000:$0.7839
      • 6000:$0.7789
      • 12000:$0.7689
      • 18000:$0.7589
      • 30000:$0.7399
      FDMS3606S
      DISTI # 68X0377      		ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 1:$0.9200
      FDMS3606SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
      RoHS: Compliant      		150000
      • 1000:$0.8800
      • 500:$0.9300
      • 100:$0.9700
      • 25:$1.0100
      • 1:$1.0900
      FDMS3606S
      DISTI # 512-FDMS3606S      		ON SemiconductorMOSFET DUAL N-CH. ER TRENCH MO
      RoHS: Compliant      		2975
      • 1:$1.5100
      • 10:$1.2800
      • 100:$0.9900
      • 500:$0.8750
      • 1000:$0.6900
      图片 型号 描述
      FDMS1D5N03

      Mfr.#: FDMS1D5N03

      OMO.#: OMO-FDMS1D5N03

      		 MOSFET PT9 30V/12V Nch PowerTrench SyncFET
      FDMS3600AS

      Mfr.#: FDMS3600AS

      OMO.#: OMO-FDMS3600AS

      		 MOSFET DUAL N-CH. ER TRENCH MO
      FDMS3624S

      Mfr.#: FDMS3624S

      OMO.#: OMO-FDMS3624S

      		 MOSFET 25V PowerTrench Power Stage
      FDMS8320LDC

      Mfr.#: FDMS8320LDC

      OMO.#: OMO-FDMS8320LDC

      		 MOSFET 40V 130A Dual Cool PowerTrench MOSFET
      FDMS8350L

      Mfr.#: FDMS8350L

      OMO.#: OMO-FDMS8350L

      		 MOSFET FET 40V 0.85 MOHM PQFN56
      FDMS86322

      Mfr.#: FDMS86322

      OMO.#: OMO-FDMS86322

      		 MOSFET 80V N-Channel PowerTrench MOSFET
      FDMS003N08C

      Mfr.#: FDMS003N08C

      OMO.#: OMO-FDMS003N08C

      		 MOSFET FET 80V 147A 3.1 mOhm
      FDMS36101L

      Mfr.#: FDMS36101L

      OMO.#: OMO-FDMS36101L-1190

      		 - Bulk (Alt: FDMS36101L)
      FDMS86101_F065

      Mfr.#: FDMS86101_F065

      OMO.#: OMO-FDMS86101-F065-1190

      		 全新原装
      FDMS86368-F085

      Mfr.#: FDMS86368-F085

      OMO.#: OMO-FDMS86368-F085-ON-SEMICONDUCTOR

      		 MOSFET N-CH 80V 80A POWER56
      可用性
      库存:
      Available
      订购:
      1985
      输入数量:
      FDMS3606S的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
      参考价格（美元）
      数量
      单价
      小计金额
      1
      US$1.32
      US$1.32
      10
      US$1.13
      US$11.30
      100
      US$0.87
      US$86.80
      500
      US$0.77
      US$383.50
      1000
      US$0.60
      US$605.00
      由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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