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SIHG11N80E-GE3

SIHG11N80E-GE3
Mfr. #:
SIHG11N80E-GE3
制造商:
Vishay / Siliconix
描述:
MOSFET 800V Vds 30V Vgs TO-247AC
生命周期:
制造商新产品。
数据表:
SIHG11N80E-GE3 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
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HTML Datasheet:
SIHG11N80E-GE3 DatasheetSIHG11N80E-GE3 Datasheet (P4-P6)SIHG11N80E-GE3 Datasheet (P7)
ECAD Model:
更多信息:
SIHG11N80E-GE3 更多信息
产品属性
属性值
制造商：
威世
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-247AC-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
800 V
Id - 连续漏极电流：
12 A
Rds On - 漏源电阻：
380 mOhms
Vgs th - 栅源阈值电压：
4 V
Vgs - 栅源电压：
30 V
Qg - 门电荷：
88 nC
最低工作温度：
- 55 C
最高工作温度：
+ 150 C
Pd - 功耗：
179 W
配置：
单身的
频道模式：
增强
系列：
E
品牌：
威世 / Siliconix
正向跨导 - 最小值：
4.5 S
秋季时间：
18 ns
产品类别：
MOSFET
上升时间：
15 ns
子类别：
MOSFET
典型关断延迟时间：
55 ns
典型的开启延迟时间：
18 ns
Tags
SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247AC
***et Europe
Transistor MOSFET N-CH 800V 12A 3-Pin TO-247AC
***i-Key
MOSFET N-CH 800V 12A TO247AC
***ark
Mosfet, N-Ch, 800V, 12A, 150Deg C, 179W; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.38Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 800V, 12A, 150DEG C, 179W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:179W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:E Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 800V, 12A, 150°C, 179W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.38ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:179W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:E Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
型号 制造商 描述 库存 价格
SIHG11N80E-GE3
DISTI # V99:2348_21688013		Vishay IntertechnologiesSIHG11N80E-GE3400
  • 2500:$1.9600
  • 1000:$2.0570
  • 500:$2.3020
  • 250:$2.6390
  • 100:$2.7210
  • 10:$3.3670
  • 1:$4.4363
SIHG11N80E-GE3
DISTI # SIHG11N80E-GE3-ND		Vishay SiliconixMOSFET N-CH 800V 12A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube		500In Stock
  • 5000:$1.9811
  • 2500:$2.0584
  • 500:$2.5692
  • 100:$3.0180
  • 25:$3.4824
  • 10:$3.6840
  • 1:$4.1000
SIHG11N80E-GE3
DISTI # 31926983		Vishay IntertechnologiesSIHG11N80E-GE3400
  • 2500:$1.9600
  • 1000:$2.0570
  • 500:$2.3020
  • 250:$2.6390
  • 100:$2.7210
  • 10:$3.3670
  • 4:$4.4363
SIHG11N80E-GE3
DISTI # SIHG11N80E-GE3		Vishay IntertechnologiesTransistor MOSFET N-CH 800V 12A 3-Pin TO-247AC (Alt: SIHG11N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€2.3900
  • 500:€2.4900
  • 50:€2.5900
  • 100:€2.5900
  • 25:€2.8900
  • 10:€3.4900
  • 1:€4.4900
SIHG11N80E-GE3
DISTI # 78AC6521		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes989
  • 500:$2.4600
  • 100:$2.8400
  • 50:$3.0400
  • 25:$3.2500
  • 10:$3.4500
  • 1:$4.1600
SIHG11N80E-GE3
DISTI # 78-SIHG11N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-247AC
RoHS: Compliant		508
  • 1:$4.1200
  • 10:$3.4200
  • 100:$2.8100
  • 250:$2.7200
  • 500:$2.4400
SIHG11N80E-GE3
DISTI # 2932926		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W
RoHS: Compliant		989
  • 1000:$4.7000
  • 500:$4.9700
  • 250:$5.2700
  • 100:$5.7500
  • 10:$6.6300
  • 1:$7.6000
SIHG11N80E-GE3
DISTI # 2932926		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 179W989
  • 500:£2.1000
  • 250:£2.1200
  • 100:£2.1800
  • 10:£2.6600
  • 1:£3.5900
图片 型号 描述
SIHB11N80E-GE3

Mfr.#: SIHB11N80E-GE3

OMO.#: OMO-SIHB11N80E-GE3

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可用性
库存:
508
订购:
2491
输入数量:
SIHG11N80E-GE3的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$4.12
US$4.12
10
US$3.42
US$34.20
100
US$2.81
US$281.00
250
US$2.72
US$680.00
500
US$2.44
US$1 220.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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