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MRF6V2010NR1

MRF6V2010NR1
Mfr. #:
MRF6V2010NR1
制造商:
NXP / Freescale
描述:
RF MOSFET Transistors VHV6 10W TO270-2N
生命周期:
制造商新产品。
数据表:
MRF6V2010NR1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
产品属性
属性值
制造商：
恩智浦
产品分类：
射频 MOSFET 晶体管
RoHS：
E
晶体管极性：
N通道
技术：
硅
Vds - 漏源击穿电压：
110 V
获得：
23.9 dB
输出功率：
10 W
最低工作温度：
- 65 C
最高工作温度：
+ 150 C
安装方式：
贴片/贴片
包装/案例：
TO-270
打包：
卷轴
配置：
单身的
高度：
2.08 mm
长度：
9.7 mm
工作频率：
450 MHz
系列：
MRF6V2010N
类型：
射频功率MOSFET
宽度：
6.15 mm
品牌：
恩智浦/飞思卡尔
频道模式：
增强
湿气敏感：
是的
产品类别：
射频 MOSFET 晶体管
出厂包装数量：
500
子类别：
MOSFET
Vgs - 栅源电压：
- 5 V, 10 V
Vgs th - 栅源阈值电压：
1.68 V
第 # 部分别名：
935309669528
单位重量：
0.018679 oz
Tags
MRF6V2010N, MRF6V20, MRF6V2, MRF6V, MRF6, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    G***a
    G***a
    IT

    ok

    2019-01-22
    T***t
    T***t
    SK

    Works great

    2019-03-25
    E***v
    E***v
    RU

    It's okay. Shipping 55 days.

    2019-07-10
    Y***v
    Y***v
    RU

    Order on march 7, came on april 26.

    2019-04-26
***W
RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
***nell
TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
***W
RF Power Transistor,450 to 1500 MHz, 10 W, Typ Gain in dB is 18 @ 960 MHz, 28 V, LDMOS, SOT1732
*** Semiconductors SCT
Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V, FM2F
***ment14 APAC
RF MOSFET, N CHANNEL, 68V, TO-270; Drain Source Voltage Vds:68V; RF Transistor Case:TO-270; MSL:MSL 3 - 168 hours; Termination Type:SMD; Gain:18dB; Peak Reflow Compatible (260 C):Yes; Transistor Polarity:N Channel
***ark
RF MOSFET, N CHANNEL, 68V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:68V; RF Transistor Case:TO-270; Gain:18dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:900MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 10 W Avg., 28 V
***W
RF Power Transistor,865 to 960 MHz, 45 W, Typ Gain in dB is 22.1 @ 880 MHz, 28 V, LDMOS, SOT1732
***ment14 APAC
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF MOSFET; Drain Source Voltage Vds:66V; Operating Frequency Min:920MHz; Operating Frequency Max:960MHz; RF Transistor Case:TO-270; No. of Pins:2; Filter Terminals:Surface Mount
***ark
RF MOSFET, N CHANNEL, 66V, TO-270; Transistor Type:RF FET; Drain Source Voltage, Vds:66V; RF Transistor Case:TO-270; Gain:22.1dB; Gate-Source Voltage:12V; Leaded Process Compatible:Yes; Operating Frequency Max:880MHz ;RoHS Compliant: Yes
***escale Semiconductor
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2700 MHz, 3 W Avg., 28 V
***et
Transistor RF FET N-CH 68V 2300MHz to 2700MHz 3-Pin TO-270 T/R
*** Electronic Components
RF MOSFET Transistors HV6 2.7GHZ 15W
***S
French Electronic Distributor since 1988
***i-Key Marketplace
RF S BAND, N-CHANNEL , TO-270AA
型号 制造商 描述 库存 价格
MRF6V2010NR1
DISTI # V72:2272_07204046		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		469
  • 250:$13.5700
  • 100:$15.0800
  • 25:$18.0100
  • 10:$18.0200
  • 1:$19.4600
MRF6V2010NR1
DISTI # MRF6V2010NR1CT-ND		NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		148In Stock
  • 100:$15.7836
  • 10:$18.4830
  • 1:$20.0400
MRF6V2010NR1
DISTI # MRF6V2010NR1DKR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		148In Stock
  • 100:$15.7836
  • 10:$18.4830
  • 1:$20.0400
MRF6V2010NR1
DISTI # MRF6V2010NR1TR-ND		NXP SemiconductorsFET RF 110V 220MHZ TO270-2
RoHS: Compliant
Min Qty: 500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 500:$13.9125
MRF6V2010NR1
DISTI # 23552799		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		500
  • 500:$16.8667
MRF6V2010NR1
DISTI # 27607406		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		469
  • 250:$13.5800
  • 100:$15.0800
  • 25:$18.0200
  • 10:$18.0400
  • 1:$19.4800
MRF6V2010NR1
DISTI # MRF6V2010NR1		NXP SemiconductorsTrans MOSFET N-CH 110V 3-Pin TO-270 T/R (Alt: MRF6V2010NR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 393
  • 500:€14.5900
  • 1000:€13.9900
  • 2000:€13.3900
  • 3000:€12.4900
  • 5000:€11.5900
MRF6V2010NR1
DISTI # MRF6V2010NR1		NXP SemiconductorsTrans MOSFET N-CH 110V 3-Pin TO-270 T/R - Tape and Reel (Alt: MRF6V2010NR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 500:$13.5900
  • 1000:$13.4900
  • 2000:$13.4900
  • 3000:$13.4900
  • 5000:$13.3900
MRF6V2010NR1
DISTI # 31AC6681		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2,Drain Source Voltage Vds:110VDC,Continuous Drain Current Id:-,Power Dissipation Pd:-,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-270,No. of Pins:2Pins,RoHS Compliant: Yes529
  • 1:$25.2600
  • 10:$23.3000
  • 25:$20.3300
  • 50:$20.1200
  • 100:$19.9000
  • 250:$19.0600
MRF6V2010NR1
DISTI # 47M2186		NXP SemiconductorsRF MOSFET, N CHANNEL, 110V, TO-270, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:10W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes0
  • 1:$24.7400
  • 500:$13.9800
MRF6V2010NR1.
DISTI # 27AC9275		NXP SemiconductorsLATERAL N-CHANNEL BROADBAND RF POWER MOSFET, 10-450 MHZ, 10 W, 50 V0
  • 1:$24.7400
  • 500:$13.9800
MRF6V2010NR1NXP SemiconductorsRF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
RoHS: Compliant		1000Reel
  • 500:$12.0500
MRF6V2010NR1
DISTI # 841-MRF6V2010NR1		NXP SemiconductorsRF MOSFET Transistors VHV6 10W TO270-2N
RoHS: Compliant		1529
  • 1:$25.2600
  • 5:$24.1500
  • 10:$23.3000
  • 25:$20.3300
  • 100:$19.9000
  • 250:$19.0600
  • 500:$17.5400
MRF6V2010NR1
DISTI # MRF6V2010NR1		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		1265
  • 1:$21.8800
  • 10:$19.7800
  • 25:$18.7000
MRF6V2010NR1
DISTI # C1S233100359787		NXP SemiconductorsTrans RF MOSFET N-CH 110V 3-Pin TO-270 T/R
RoHS: Compliant		469
  • 250:$13.5800
  • 100:$15.0800
  • 25:$18.0200
  • 10:$18.0400
  • 1:$19.4800
MRF6V2010NR1
DISTI # 2776251		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2
RoHS: Compliant		529
  • 1:£15.3200
  • 5:£14.7300
  • 10:£14.1400
  • 50:£13.1100
  • 100:£12.0700
MRF6V2010NR1
DISTI # 2776251		NXP SemiconductorsTRANSISTOR, RF, 110V, TO-270-2
RoHS: Compliant		529
  • 1:$30.3700
  • 5:$29.1100
  • 10:$26.8700
  • 50:$25.4000
  • 100:$24.0900
  • 250:$22.9000
MRF6V2010NR1
DISTI # XSFT00000023892		NXP SemiconductorsMNR18 SERIES 8 ELEMENT 0602 X 8 100 K 5 % SMTCOMPACT CHIP RESISTOR NETWORK
RoHS: Compliant		1000
  • 500:$21.4600
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可用性
库存:
Available
订购:
1984
输入数量:
MRF6V2010NR1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格（美元）
数量
单价
小计金额
1
US$25.26
US$25.26
5
US$24.15
US$120.75
10
US$23.30
US$233.00
25
US$20.33
US$508.25
100
US$19.90
US$1 990.00
250
US$19.06
US$4 765.00
由于2021年半导体供不应求，低于2021年之前的正常价格，请发询价确认。
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