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| PartNumber | MRF6V2010GNR1 | MRF6V2010GNR5 | MRF6V2010NBR1 |
| Description | RF MOSFET Transistors VHV6 10W TO270-2GN | RF MOSFET Transistors VHV6 10W TO270-2GN | RF MOSFET Transistors VHV6 10W TO272-2N |
| Manufacturer | NXP | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | E | E | E |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Technology | Si | Si | Si |
| Vds Drain Source Breakdown Voltage | 110 V | 110 V | 110 V |
| Gain | 23.9 dB | 23.9 dB | - |
| Output Power | 10 W | 10 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-270-2 | TO-270-2 | TO-272-3 |
| Packaging | Reel | Reel | Reel |
| Configuration | Single | Single | Single |
| Operating Frequency | 450 MHz | 450 MHz | - |
| Type | RF Power MOSFET | RF Power MOSFET | RF Power MOSFET |
| Brand | NXP / Freescale | NXP / Freescale | NXP / Freescale |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 500 | 50 | 500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Vgs Gate Source Voltage | 10 V | 10 V | - 5 V, 10 V |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Part # Aliases | 935321298528 | - | 935319274528 |
| Unit Weight | 0.019330 oz | 0.019330 oz | 0.042191 oz |
| Minimum Operating Temperature | - | - | - 65 C |
| Height | - | - | 2.64 mm |
| Length | - | - | 23.67 mm |
| Series | - | - | MRF6V2010N |
| Width | - | - | 6.4 mm |
| Channel Mode | - | - | Enhancement |