FDP6676S

Mfr. #:: FDP6676S
制造商:: Rochester Electronics, LLC
描述:: MOSFET 30V N-Ch PowerTrench
生命周期:: 制造商新产品。
数据表:: FDP6676S 数据表
交货:: DHL FedEx Ups TNT EMS
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产品属性
属性值

Tags: FDP6676, FDP667, FDP66, FDP6, FDP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP6676S 描述

***et: MOSFET 30V N-Ch PowerTrench Logic Level

***ser: Not available to order 30V N-Ch PowerTrench

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***icroelectronics: N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: N-Channel 30 V 4.7 mO Flange Mount STripFET VI DeepGATE Mosfet - TO-220

***r Electronics: Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CH, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:- RoHS Compliant: Yes

***ure Electronics: Single N-Channel 60 V 7mOhm 70.5nC 80 W STripFET VI DeepGATE Mosfet -TO-220-3

***icroelectronics: N-channel 60 V, 0.0063 Ohm typ., 77 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package

***r Electronics: Power Field-Effect Transistor, 77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***et: Trans MOSFET N-CH 60V 77A 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics: N-CHANNEL 55V 0.005 Ohm 80A TO-220 STripFET™ MOSFET

***ure Electronics: N-Channel 55 V 0.0065 Ohm Flange Mount STripFET II MOSFET - TO-220

*** Source Electronics: Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 55V 80A TO-220

***enic: 55V 80A 300W 6.5m´Î@10V40A 1V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation P

***r Electronics: Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***et: MOSFET 30V N-Ch PowerTrench Logic Level

***i-Key: N-CHANNEL POWER MOSFET

***el Nordic: Contact for details

***ark: MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Dr

***ure Electronics: Single N-Channel 80 V 5.7 mOhm 52 nC OptiMOS Power Mosfet - TO-220-3

***ow.cn: Trans MOSFET N-CH 80V 80A Automotive 3-Pin(3+Tab) TO-220 Tube

***el Electronic: INFINEON - IPP057N08N3GXKSA1 - MOSFET, N CH, 80A, 80V, PG-TO220-3

*** Stop Electro: Power Field-Effect Transistor, 80A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N CH, 80A, 80V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:80V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:150W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Current Id Max:80A; Operating Temperature Range:-55°C to +175°C; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 80 / ON Resistance (Rds(on)) mOhm = 5.4 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 66 / Turn-OFF Delay Time ns = 38 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 150

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ure Electronics: Single N-Channel 60 V 4 mOhm 98 nC OptiMOS Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 60V 90A 3-Pin(3+Tab) TO-220 Tube

***el Electronic: INFINEON - IPP040N06N3GXKSA1 - MOSFET, N CH, 90A, 60V, PG-TO220-3

*** Stop Electro: Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, PG-TO220-3, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 60V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:188W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:188W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 130 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 4 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 40 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 188

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

Market price

型号	制造商	描述	库存	价格
FDP6676S DISTI # 512-FDP6676S	ON Semiconductor	MOSFET 30V N-Ch PowerTrench RoHS: Not compliant	0
FDP6676S	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 76A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant	1485	1000:$0.9000 500:$0.9400 100:$0.9800 25:$1.0200 1:$1.1000
FDP6676S	Fairchild Semiconductor Corporation	76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	685	659:$0.8384 306:$0.9113 1:$2.1870

图片	型号	描述
	Mfr.#: FDP65N06 OMO.#: OMO-FDP65N06	MOSFET 60V N-Channel MOSFET
	Mfr.#: FDP6670AL OMO.#: OMO-FDP6670AL	MOSFET N-Ch PowerTrench Logic Level
	Mfr.#: FDP6030L OMO.#: OMO-FDP6030L	MOSFET N-Ch PowerTrench Logic Level
	Mfr.#: FDP6030 OMO.#: OMO-FDP6030-1190	全新原装
	Mfr.#: FDP6035L OMO.#: OMO-FDP6035L-1190	MOSFET N-Ch PowerTrench Logic
	Mfr.#: FDP603AL OMO.#: OMO-FDP603AL-1190	全新原装
	Mfr.#: FDP60N20 OMO.#: OMO-FDP60N20-1190	全新原装
	Mfr.#: FDP61N20 OMO.#: OMO-FDP61N20-ON-SEMICONDUCTOR	MOSFET N-CH 200V 61A TO-220
	Mfr.#: FDP61N20PBF OMO.#: OMO-FDP61N20PBF-1190	全新原装
	Mfr.#: FDP6670,FDP6670AL, OMO.#: OMO-FDP6670-FDP6670AL--1190	全新原装

FDP6676S

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes