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FDP6670AL

FDP6670AL
Mfr. #:
FDP6670AL
制造商:
ON Semiconductor / Fairchild
描述:
MOSFET N-Ch PowerTrench Logic Level
生命周期:
制造商新产品。
数据表:
FDP6670AL 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDP6670AL DatasheetFDP6670AL Datasheet (P4-P5)
ECAD Model:
产品属性
属性值
制造商：
安森美半导体
产品分类：
MOSFET
RoHS：
Y
技术：
硅
安装方式：
通孔
包装/案例：
TO-220-3
通道数：
1 Channel
晶体管极性：
N通道
Vds - 漏源击穿电压：
30 V
Id - 连续漏极电流：
80 A
Rds On - 漏源电阻：
6.5 mOhms
Vgs - 栅源电压：
20 V
最低工作温度：
- 65 C
最高工作温度：
+ 175 C
Pd - 功耗：
68 W
配置：
单身的
频道模式：
增强
打包：
管子
高度：
16.3 mm
长度：
10.67 mm
系列：
FDP6670AL
晶体管类型：
1 N-Channel
类型：
MOSFET
宽度：
4.7 mm
品牌：
安森美半导体/飞兆半导体
正向跨导 - 最小值：
115 S
秋季时间：
15 ns
产品类别：
MOSFET
上升时间：
13 ns
出厂包装数量：
400
子类别：
MOSFET
典型关断延迟时间：
42 ns
典型的开启延迟时间：
13 ns
第 # 部分别名：
FDP6670AL_NL
单位重量：
0.063493 oz
Tags
FDP6670, FDP667, FDP66, FDP6, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ark
RAIL/30V,92A,5.9m ohm ,NCH,TO220,POWER TRENCH MOSFET
***Yang
Trans MOSFET N-CH 30V 16A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***emi
N-Channel PowerTrench® MOSFET 30V, 92A, 5.9mΩ
***ure Electronics
N-Channel 30 V 5.9 mOhm PowerTrench Mosfet - TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***ure Electronics
Single N-Channel 30 V 6.3 mOhm 17 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 30V 87A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***ure Electronics
Single N-Channel 30 V 4.8 mOhm 15 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 30V 92A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 75 W
***nell
MOSFET, N CH, 30V, 78A, TO220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 75W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 92A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.8V; Voltage Vgs Rds on Measurement: 10V
***emi
Power MOSFET 90 Amps, 24 Volts
***ser
MOSFETs- Power and Small Signal 24V 90A N-Channel
***r Electronics
Power Field-Effect Transistor, 90A I(D), 24V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ser
MOSFETs- Power and Small Signal 24V 90A N-Channel No-Cancel/No-Return
***i-Key
MOSFET N-CH 24V 90A TO220AB
***r Electronics
Power Field-Effect Transistor, 90A I(D), 24V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
*** Electronics
N-CHANNEL POWER MOSFET
型号 制造商 描述 库存 价格
FDP6670AL
DISTI # FDP6670AL-ND		ON SemiconductorMOSFET N-CH 30V 80A TO-220
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
    FDP6670AL
    DISTI # 38C7148    		ON SemiconductorN CHANNEL MOSFET, 30V, 80A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0065ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,MSL:- RoHS Compliant: Yes0
      FDP6670AL
      DISTI # 512-FDP6670AL      		ON SemiconductorMOSFET N-Ch PowerTrench Logic Level
      RoHS: Compliant      		0
        FDP6670AL_Q
        DISTI # 512-FDP6670AL_Q        		ON SemiconductorMOSFET N-Ch PowerTrench Logic Level
        RoHS: Not compliant        		0
          FDP6670ALFairchild Semiconductor CorporationPower Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
          RoHS: Compliant          		26896
          • 1000:$0.5500
          • 500:$0.5800
          • 100:$0.6100
          • 25:$0.6300
          • 1:$0.6800
          FDP6670ALFairchild Semiconductor Corporation 1202
            FDP6670ALFairchild Semiconductor Corporation80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB385
            • 77:$0.4620
            • 16:$0.6600
            • 1:$1.3200
            FDP6670ALFairchild Semiconductor Corporation80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB14
            • 4:$1.3200
            • 1:$1.6500
            FDP6670ALUnknown80 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB2444
            • 1113:$1.6350
            • 497:$1.7985
            • 1:$3.2700
            FDP6670ALFairchild Semiconductor Corporation 18
              FDP6670ALFairchild Semiconductor Corporation 855
                FDP6670ALFairchild Semiconductor Corporation 50
                  FDP6670AL
                  DISTI # 1467978                  		ON SemiconductorMOSFET, N, 3-TO-220
                  RoHS: Compliant                  		0
                  • 1000:$1.9100
                  • 500:$2.1800
                  • 250:$2.4800
                  • 100:$2.7000
                  • 25:$2.9700
                  • 1:$3.1600
                  图片 型号 描述
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                  FDP6603AL

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                  FDP6644

                  Mfr.#: FDP6644

                  OMO.#: OMO-FDP6644-1190

                  		 55 A, 30 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
                  FDP6670ALNL

                  Mfr.#: FDP6670ALNL

                  OMO.#: OMO-FDP6670ALNL-1190

                  		 全新原装
                  FDP6676S

                  Mfr.#: FDP6676S

                  OMO.#: OMO-FDP6676S-1190

                  		 MOSFET 30V N-Ch PowerTrench
                  可用性
                  库存:
                  Available
                  订购:
                  4500
                  输入数量:
                  FDP6670AL的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
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