IPZA60R080P7XKSA1

IPZA60R080P7XKSA1
Mfr. #:
IPZA60R080P7XKSA1
制造商:
Infineon Technologies
描述:
MOSFET HIGH POWER_NEW
生命周期:
制造商新产品。
数据表:
IPZA60R080P7XKSA1 数据表
交货:
DHL FedEx Ups TNT EMS
支付:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
更多信息:
IPZA60R080P7XKSA1 更多信息
产品属性
属性值
制造商:
英飞凌
产品分类:
MOSFET
RoHS:
Y
技术:
安装方式:
通孔
包装/案例:
PG-TO-247-4
通道数:
1 Channel
晶体管极性:
N通道
Vds - 漏源击穿电压:
600 V
Id - 连续漏极电流:
37 A
Rds On - 漏源电阻:
69 mOhms
Vgs th - 栅源阈值电压:
3 V
Vgs - 栅源电压:
10 V
Qg - 门电荷:
51 nC
最低工作温度:
- 55 C
最高工作温度:
+ 150 C
Pd - 功耗:
129 W
配置:
单身的
频道模式:
增强
打包:
管子
晶体管类型:
1 N-Channel
品牌:
英飞凌科技
秋季时间:
5 ns
产品类别:
MOSFET
上升时间:
8 ns
出厂包装数量:
240
子类别:
MOSFET
典型关断延迟时间:
70 ns
典型的开启延迟时间:
15 ns
第 # 部分别名:
IPZA60R080P7 SP001707740
Tags
IPZA60R0, IPZA, IPZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
***ineon
Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
***ark
Mosfet, N-Ch, 600V, 37A, To-247; Transistor Polarity:n Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
型号 制造商 描述 库存 价格
IPZA60R080P7XKSA1
DISTI # V99:2348_18786393
Infineon Technologies AG600V CoolMOS¿P7 Power Transistor168
  • 2640:$3.5700
  • 720:$3.8700
  • 240:$4.4879
  • 25:$5.2089
  • 10:$5.4650
  • 1:$6.6407
IPZA60R080P7XKSA1
DISTI # IPZA60R080P7XKSA1-ND
Infineon Technologies AGMOSFET TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube
190In Stock
  • 2640:$3.4850
  • 720:$4.1552
  • 240:$4.7717
  • 25:$5.4956
  • 10:$5.7640
  • 1:$6.3800
IPZA60R080P7XKSA1
DISTI # 33655386
Infineon Technologies AG600V CoolMOS¿P7 Power Transistor240
  • 240:$3.1977
IPZA60R080P7XKSA1
DISTI # 32416808
Infineon Technologies AG600V CoolMOS¿P7 Power Transistor240
  • 240:$5.2812
IPZA60R080P7XKSA1
DISTI # 27012788
Infineon Technologies AG600V CoolMOS¿P7 Power Transistor168
  • 2640:$3.5700
  • 720:$3.8700
  • 240:$4.4879
  • 25:$5.2089
  • 10:$5.4650
  • 2:$6.6407
IPZA60R080P7XKSA1
DISTI # IPZA60R080P7XKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZA60R080P7XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 240
  • 2400:$3.0900
  • 1200:$3.1900
  • 720:$3.2900
  • 240:$3.3900
  • 480:$3.3900
IPZA60R080P7XKSA1
DISTI # SP001707740
Infineon Technologies AGTrans MOSFET N-CH 650V 37A 4-Pin TO-247 Tube (Alt: SP001707740)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 240
  • 1000:€2.8900
  • 100:€2.9900
  • 500:€2.9900
  • 50:€3.0900
  • 25:€3.1900
  • 10:€3.2900
  • 1:€3.3900
IPZA60R080P7XKSA1
DISTI # 57AC6819
Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:37A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes240
  • 500:$3.9900
  • 250:$4.3800
  • 100:$4.5900
  • 50:$4.9300
  • 25:$5.2800
  • 10:$5.5400
  • 1:$6.1300
IPZA60R080P7XKSA1Infineon Technologies AGN-Channel 600 V 80 mOhm Industrial Grade CoolMOS P7 Mosfet - TO-247-4
RoHS: Not Compliant
240Tube
  • 240:$3.2200
IPZA60R080P7XKSA1
DISTI # 726-IPZA60R080P7XKSA
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
465
  • 1:$6.0700
  • 10:$5.4900
  • 25:$5.2300
  • 100:$4.5400
  • 250:$4.3400
  • 500:$3.9500
IPZA60R080P7XKSA1
DISTI # 2862300
Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-247
RoHS: Compliant
240
  • 2640:$5.3900
  • 720:$6.2700
  • 240:$7.2000
  • 25:$8.2900
  • 10:$8.6900
  • 1:$9.6100
IPZA60R080P7XKSA1
DISTI # 2862300
Infineon Technologies AGMOSFET, N-CH, 600V, 37A, TO-247240
  • 500:£2.9000
  • 250:£3.1700
  • 100:£3.3300
  • 10:£3.8300
  • 1:£4.9100
IPZA60R080P7XKSA1
DISTI # XSFP00000136860
Infineon Technologies AG 
RoHS: Compliant
480 in Stock0 on Order
  • 480:$4.2900
  • 240:$4.6000
图片 型号 描述
SMCJ48A

Mfr.#: SMCJ48A

OMO.#: OMO-SMCJ48A

TVS Diodes / ESD Suppressors 1500 Watt TVSs
IPW60R070CFD7XKSA1

Mfr.#: IPW60R070CFD7XKSA1

OMO.#: OMO-IPW60R070CFD7XKSA1

MOSFET HIGH POWER_NEW
IPA60R180P7XKSA1

Mfr.#: IPA60R180P7XKSA1

OMO.#: OMO-IPA60R180P7XKSA1

MOSFET
BSF134N10NJ3 G

Mfr.#: BSF134N10NJ3 G

OMO.#: OMO-BSF134N10NJ3-G

MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3
6N136M

Mfr.#: 6N136M

OMO.#: OMO-6N136M

High Speed Optocouplers High Speed Transistor
IPW65R041CFD

Mfr.#: IPW65R041CFD

OMO.#: OMO-IPW65R041CFD

MOSFET N-Ch 700V 68.5A TO247-3 CoolMOS CFD2
MLF2012E5R6JT000

Mfr.#: MLF2012E5R6JT000

OMO.#: OMO-MLF2012E5R6JT000

Fixed Inductors 5.6 UH 5%
EVAL45W19VFLYBP7TOBO1

Mfr.#: EVAL45W19VFLYBP7TOBO1

OMO.#: OMO-EVAL45W19VFLYBP7TOBO1

Power Management IC Development Tools 45W adapter evaluation board
2643000501

Mfr.#: 2643000501

OMO.#: OMO-2643000501

Ferrite Cable Cores 43 Shield Bead 22OHM/100MHZ; 300MHZ
SMCJ48A

Mfr.#: SMCJ48A

OMO.#: OMO-SMCJ48A-LITTELFUSE

TVS Diodes - Transient Voltage Suppressors 1500W TVS Unidirectional
可用性
库存:
465
订购:
2448
输入数量:
IPZA60R080P7XKSA1的当前价格仅供参考,如果您想获得最优惠的价格,请提交查询或直接发送电子邮件至我们的销售团队[email protected]
参考价格(美元)
数量
单价
小计金额
1
US$6.07
US$6.07
10
US$5.49
US$54.90
25
US$5.23
US$130.75
100
US$4.54
US$454.00
250
US$4.34
US$1 085.00
500
US$3.95
US$1 975.00
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