HGTG30N60C3D

Mfr. #:: HGTG30N60C3D
制造商:: ON Semiconductor
描述:: IGBT 600V 63A 208W TO247
生命周期:: 制造商新产品。
数据表:: HGTG30N60C3D 数据表
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产品属性
属性值

制造商: 仙童半导体

产品分类: IGBT - 单

系列: -

打包: 管子

部分别名: HGTG30N60C3D_NL

单位重量: 0.225401 oz

安装方式: 通孔

包装盒: TO-247-3

输入类型: 标准

安装型: 通孔

供应商-设备-包: TO-247

配置: 单身的

最大功率: 208W

反向恢复时间trr: 60ns

电流收集器 Ic-Max: 63A

电压收集器发射极击穿最大值: 600V

IGBT型: -

电流收集器脉冲Icm: 252A

Vce-on-Max-Vge-Ic: 1.8V @ 15V, 30A

开关能源: 1.05mJ (on), 2.5mJ (off)

栅极电荷: 162nC

Td-on-off-25°C: -

测试条件: -

钯功耗: 208 W

最高工作温度: + 150 C

最低工作温度: - 40 C

集电极-发射极-电压-VCEO-Max: 600 V

集电极-发射极-饱和-电压: 1.5 V

25-C 时的连续集电极电流: 63 A

栅极-发射极-漏电流: +/- 100 nA

最大栅极发射极电压: +/- 20 V

连续集电极电流 Ic-Max: 63 A

Tags: HGTG30N60C, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT

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Vacuum Packaging with PL

Step2:
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HGTG30N60C3D 描述

***ied Electronics & Automation: HGTG30N60C3D; IGBT Transistor N-channel; 63 A 600 V; 3- Pin TO-247

***ter Electronics: 600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE

***ical: Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG30N60C3D Series 600 V 63 A Flange Mount UFS N-Channel IGBT-TO-247

***et: SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES

***ser: IGBTs 63a,600V, NCh IGBT Hyperfast anti-para

***Components: TRANSISTOR IGBT N-CH 600V 63A TO247

***i-Key: IGBT NCH UFS 600V 30A TO247

***ment14 APAC: SINGLE IGBT, 600V, 63A

***Semiconductor: 600V, PT IGBT

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes

***nell: IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

***rchild Semiconductor: The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

Market price

型号	制造商	描述	库存	价格
HGTG30N60C3D DISTI # V99:2348_06359325	ON Semiconductor	PWR IGBT UFS 30A 600V W/DIODE	426	900:$4.8179 450:$4.9600 10:$5.7250 1:$6.5160
HGTG30N60C3D DISTI # HGTG30N60C3D-ND	ON Semiconductor	IGBT 600V 63A 208W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	891In Stock	900:$5.1058 450:$5.5999 10:$7.0820 1:$7.8400
HGTG30N60C3D DISTI # 25845335	ON Semiconductor	PWR IGBT UFS 30A 600V W/DIODE	426	10:$5.7250 2:$6.5160
HGTG30N60C3D DISTI # HGTG30N60C3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$4.7900 900:$4.7900 1800:$4.7900 2700:$4.7900 4500:$4.7900
HGTG30N60C3D DISTI # 58K1593	ON Semiconductor	Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1593) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$5.3400
HGTG30N60C3D DISTI # 58K1593	ON Semiconductor	IGBT,N CHANNEL,600V,63A,TO-247,DC Collector Current:63A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	581	1:$5.5700
HGTG30N60C3D DISTI # 70418406	ON Semiconductor	HGTG30N60C3D,IGBT Transistor N-channel,63 A 600 V,3- Pin TO-247 RoHS: Not Compliant	2	1:$4.1560
HGTG30N60C3D DISTI # 512-HGTG30N60C3D	ON Semiconductor	IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para RoHS: Compliant	0
HGTG30N60C3D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	9501	1000:$5.9900 500:$6.3000 100:$6.5600 25:$6.8400 1:$7.3700
HGTG30N60C3D_NL	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	57	1000:$3.2200 500:$3.3900 100:$3.5300 25:$3.6800 1:$3.9700
HGTG30N60C3D	Fairchild Semiconductor Corporation		645
HGTG30N60C3D	Intersil Corporation	IGBT Transistor, TO-247AA	54	6:$3.6000 2:$4.8000 1:$7.2000
HGTG30N60C3D DISTI # 2463194	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 63A TO247, EA	1	1:£5.6000 6:£5.1500
HGTG30N60C3D	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 150
HGTG30N60C3D	Fairchild Semiconductor Corporation	INSTOCK	12
HGTG30N60C3D			1080
HGTG30N60C3D DISTI # C1S541901524025	ON Semiconductor	IGBT Chip RoHS: Not Compliant	426	100:$4.5700 25:$4.7390 10:$5.1040 1:$6.2100
HGTG30N60C3D DISTI # 1838985	ON Semiconductor	IGBT,N CH,600V,63A,TO-247 RoHS: Compliant	1134	1:£6.8100 5:£6.2500 10:£5.6500 50:£5.1200 100:£4.5800
HGTG30N60C3D DISTI # 1838985	ON Semiconductor	IGBT,N CH,600V,63A,TO-247 RoHS: Compliant	1107	1:$12.5000 10:$11.2900 450:$8.9300 900:$8.1400

图片	型号	描述
	Mfr.#: HGTG30N60A4 OMO.#: OMO-HGTG30N60A4	IGBT Transistors 600V N-Channel IGBT SMPS Series
	Mfr.#: HGTG30N60B3 OMO.#: OMO-HGTG30N60B3	IGBT Transistors 600V N-Channel IGBT UFS Series
	Mfr.#: HGTG30N60B3D OMO.#: OMO-HGTG30N60B3D	IGBT Transistors 600V IGBT UFS N-Channel
	Mfr.#: HGTG30N60A4 OMO.#: OMO-HGTG30N60A4-ON-SEMICONDUCTOR	IGBT 600V 75A 463W TO247
	Mfr.#: HGTG30N60B3 OMO.#: OMO-HGTG30N60B3-ON-SEMICONDUCTOR	IGBT Transistors 600V N-Channel IGBT UFS Series
	Mfr.#: HGTG30N120 OMO.#: OMO-HGTG30N120-1190	全新原装
	Mfr.#: HGTG30N60A OMO.#: OMO-HGTG30N60A-1190	全新原装
	Mfr.#: HGTG30N60A4D,30N60A4D OMO.#: OMO-HGTG30N60A4D-30N60A4D-1190	全新原装
	Mfr.#: HGTG30N60B5 OMO.#: OMO-HGTG30N60B5-1190	全新原装
	Mfr.#: HGTG30N60A4D-- OMO.#: OMO-HGTG30N60A4D---1190	全新原装

HGTG30N60C3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes