IRFH5302DTRPBF

Mfr. #:: IRFH5302DTRPBF
制造商:: Infineon Technologies
描述:: MOSFET N-CH 30V 29A 8VQFN
生命周期:: 制造商新产品。
数据表:: IRFH5302DTRPBF 数据表
交货:: DHL FedEx Ups TNT EMS
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ECAD Model:
更多信息:: IRFH5302DTRPBF 更多信息

产品属性
属性值

制造商: 红外线

产品分类: FET - 单

打包: 卷轴

安装方式: 贴片/贴片

包装盒: PQFN-8

技术: 硅

通道数: 1 Channel

配置: 1 N-Channel

晶体管型: 1 N-Channel

钯功耗: 3.6 W

VGS-栅极-源极-电压: 20 V

Id 连续漏极电流: 100 A

Vds-漏-源-击穿电压: 30 V

Rds-On-Drain-Source-Resistance: 2.5 mOhms

晶体管极性: N通道

Qg-门电荷: 26 nC

Tags: IRFH5302DT, IRFH5302D, IRFH5302, IRFH53, IRFH5, IRFH, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRFH5302DTRPBF 描述

***Components: On a Reel of 4000, N-Channel MOSFET, 100 A, 30 V, 8-Pin PQFN Infineon IRFH5302DTRPBF

***ure Electronics: Single N-Channel 30 V 2.5 mOhm 26 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***ied Electronics & Automation: MOSFET, N-Channel, 30V FETky, 100A, 2.5 mOhm, 26 nC Qg, PQFN

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET with an integrated Schottky Diode in a 5mm X 6mm PQFN package

***ical: Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R

***i-Key: MOSFET N-CH 30V 29A 8VQFN

***nell: MOSFET, CAN N, 30V, 100A, 150°C, 104W;

***ment14 APAC: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W

***ark: MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:3.6W;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs

IRFH5302DTRPBF 更多信息

PQFN 5x6 Package HEXFET® Power MOSFETs: Infineon PQFN Package HEXFET Power MOSFETs are an addition to an extensive portfolio of devices featuring IR's latest low-voltage HEXFET MOSFET silicon in a PQFN package for low power applications including battery protection switch, secondary side synchronous rectification, inverter for DC motors, DC-DC brick, and boost converters. Featuring a very low on-state resistance (RDS(on)) to significantly cut conduction losses, these new power MOSFETs are available as 20V, 40V and 75V devices in N-Channel configurations. As a result of the low RDS(on) of this platform, these devices can be used to replace MOSFETs in larger packages to save board space and reduce system cost.Learn More

Market price

型号	制造商	描述	库存	价格
IRFH5302DTRPBF DISTI # IRFH5302DTRPBF-ND	Infineon Technologies AG	MOSFET N-CH 30V 29A 8VQFN RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	Temporarily Out of Stock	4000:$0.9615
IRFH5302DTRPBF DISTI # IRFH5302DTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R (Alt: IRFH5302DTRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.7746 8000:$0.7428 12000:$0.7328 20000:$0.7042 40000:$0.6952 100000:$0.6778 200000:$0.6613
IRFH5302DTRPBF DISTI # IRFH5302DTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 29A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5302DTRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.7459 8000:$0.7189 16000:$0.6929 24000:$0.6699 40000:$0.6579
IRFH5302DTRPBF DISTI # 70019249	Infineon Technologies AG	MOSFET,N-Channel,30V FETky,100A,2.5mOhm,26 nC Qg,PQFN RoHS: Compliant	0	4000:$1.5700
IRFH5302DTRPBF DISTI # 942-IRFH5302DTRPBF	Infineon Technologies AG	MOSFET 20V DUAL N / P CH 2.5mOhms 26nC RoHS: Compliant	155	1:$1.9100 10:$1.6200 100:$1.3000 500:$1.1400 1000:$0.9390 4000:$0.8420 8000:$0.8100
IRFH5302DTRPBF DISTI # 1300980P	Infineon Technologies AG	MOSFET HEXFET N-CH 30V 29A PQFN8, RL	1950	25:£0.5360

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