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| PartNumber | IRFH5302DTRPBF | IRFH5302DTR2PBF | IRFH5302D |
| Description | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | MOSFET N-CH 30V 29A 8VQFN | |
| Manufacturer | Infineon | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | 1 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 26 nC | - | - |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | 1 N-Channel |
| Packaging | Reel | - | Reel |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001570962 | - | - |
| Package Case | - | - | PQFN-8 |
| Pd Power Dissipation | - | - | 3.6 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 100 A |
| Vds Drain Source Breakdown Voltage | - | - | 30 V |
| Rds On Drain Source Resistance | - | - | 2.5 mOhms |
| Qg Gate Charge | - | - | 26 nC |
| 制造商 | 型号 | 描述 | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH5302DTRPBF | MOSFET 20V DUAL N / P CH 2.5mOhms 26nC | |
Infineon Technologies |
IRFH5302DTRPBF | MOSFET N-CH 30V 29A 8VQFN | |
| IRFH5302DTR2PBF | MOSFET N-CH 30V 29A 8VQFN | ||
| IRFH5302DTRPBF. | 全新原装 | ||
| IRFH5302D | 全新原装 |