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IKW50N65ES5XKSA1

IKW50N65ES5XKSA1
Mfr. #:
IKW50N65ES5XKSA1
制造商:
Infineon Technologies
描述:
IGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity re
生命周期:
制造商新产品。
数据表:
IKW50N65ES5XKSA1 数据表
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ECAD Model:
更多信息:
IKW50N65ES5XKSA1 更多信息
产品属性
属性值
制造商：
英飞凌
产品分类：
IGBT晶体管
RoHS：
Y
技术：
硅
包装/案例：
TO-247-3
安装方式：
通孔
配置：
单身的
集电极-发射极电压 VCEO 最大值：
650 V
集电极-发射极饱和电压：
1.35 V
最大栅极发射极电压：
20 V
25 C 时的连续集电极电流：
80 A
Pd - 功耗：
274 W
最低工作温度：
- 40 C
最高工作温度：
+ 175 C
系列：
TRENCHSTOP 5 S5
打包：
管子
高度：
20.7 mm
长度：
15.87 mm
宽度：
5.31 mm
品牌：
英飞凌科技
栅极-发射极漏电流：
100 nA
产品类别：
IGBT晶体管
出厂包装数量：
240
子类别：
IGBT
商品名：
战壕
第 # 部分别名：
IKW50N65ES5 SP001319682
Tags
IKW50N65E, IKW50N65, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube
***ark
Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:274W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization. | Summary of Features: Very low V CE(sat) of 1.35V at 25C, 20% lower than TRENCHSTOP 5 H5; 4 times Ic pulse current (100C T c); Soft current fall characteristics with no tail current; Symmetrical, low voltage overshoot; Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping; Maximum junction temperature T vj=175C; Qualified according to JEDEC standards | Benefits: V CE(peak) clamping circuits not required; Suitable for use with single turn-on / turn-off gate resistor; No need for gate clamping components; Gate drivers with Miller clamping not required; Reduction in the EMI filtering needed; Excellent for paralleling | Target Applications: Storage; UPS; Welding; Solar; Charger
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
Home Appliance Solutions
Infineon Home Appliance Solutions offer a range of products for low power drive in-home appliance applications. These devices meet and exceed the most rigorous requirements for reliability, quality, security and energy efficiency. Included in this portfolio are RC-Drives IGBTs, fast IGBTs, discrete IGBTs, rapid diodes, gate driver ICs, microcontrollers: XMC™ and iMotion™, IPM: CIPOS™ and IRAM.Learn More
TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs
Infineon TRENCHSTOP™ 5 S5 Medium Speed Switching IGBTs are the link between the L5 and H5 and address applications switching between 10kHz and 40kHz. The IGBTs deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization. The S5 are packed with features to help designers achieve goals without the need to increase circuit complexity.
型号 制造商 描述 库存 价格
IKW50N65ES5XKSA1
DISTI # 33708177		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube730
  • 4:$2.5109
IKW50N65ES5XKSA1
DISTI # IKW50N65ES5XKSA1-ND		Infineon Technologies AGIGBT TRENCH 650V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		240In Stock
  • 2640:$2.9784
  • 720:$3.7081
  • 240:$4.3558
  • 25:$5.0260
  • 10:$5.3160
  • 1:$5.9200
IKW50N65ES5XKSA1
DISTI # V99:2348_09156915		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$2.6640
  • 120000:$2.6680
  • 24000:$3.1040
  • 2400:$3.9450
  • 240:$4.0900
IKW50N65ES5XKSA1
DISTI # V36:1790_09156915		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 274000mW 3-Pin(3+Tab) TO-247 Tube0
  • 240000:$2.4780
  • 120000:$2.4820
  • 24000:$2.9690
  • 2400:$3.9250
  • 240:$4.0900
IKW50N65ES5XKSA1
DISTI # SP001319682		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 (Alt: SP001319682)
RoHS: Compliant
Min Qty: 1		Europe - 1680
  • 1000:€2.1900
  • 500:€2.2900
  • 100:€2.3900
  • 50:€2.4900
  • 25:€2.5900
  • 10:€2.6900
  • 1:€2.9900
IKW50N65ES5XKSA1
DISTI # IKW50N65ES5XKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 - Rail/Tube (Alt: IKW50N65ES5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 1440:$2.6900
  • 2400:$2.6900
  • 960:$2.7900
  • 480:$2.8900
  • 240:$2.9900
IKW50N65ES5XKSA1
DISTI # IKW50N65ES5		Infineon Technologies AGTrans IGBT Chip N-CH 650V 80A 3-Pin TO-247 (Alt: IKW50N65ES5)
RoHS: Compliant
Min Qty: 240		Asia - 0
    IKW50N65ES5XKSA1
    DISTI # 12AC9677    		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.35V,Power Dissipation Pd:274W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes878
    • 500:$3.5800
    • 250:$3.9300
    • 100:$4.1200
    • 50:$4.3100
    • 25:$4.4900
    • 10:$4.6800
    • 1:$5.4200
    IKW50N65ES5
    DISTI # 726-IKW50N65ES5    		Infineon Technologies AGIGBT Transistors Trenchstop 5 IGBT
    RoHS: Compliant    		231
    • 1:$5.6300
    • 10:$4.7800
    • 100:$4.1400
    • 250:$3.9300
    • 500:$3.5300
    IKW50N65ES5XKSA1
    DISTI # 726-IKW50N65ES5XKSA1    		Infineon Technologies AGIGBT Transistors TRENCHSTOP 5 S5 is the new IGBT family addressing applications switching between 10kHz and 40kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
    RoHS: Compliant    		206
    • 1:$5.6300
    • 10:$4.7800
    • 100:$4.1400
    • 250:$3.9300
    • 500:$3.5300
    • 1000:$3.0400
    IKW50N65ES5XKSA1
    DISTI # 1338575    		Infineon Technologies AGIGBT 650V 50A TRENCHSTOP 10-40KHZ TO-247, TU990
    • 720:£2.6150
    • 240:£2.8430
    IKW50N65ES5XKSA1
    DISTI # 2709923    		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247878
    • 500:£2.1400
    • 250:£2.3900
    • 100:£2.5300
    • 10:£2.9100
    • 1:£3.4200
    IKW50N65ES5XKSA1
    DISTI # 2709923    		Infineon Technologies AGIGBT, SINGLE, 650V, 80A, TO-247
    RoHS: Compliant    		878
    • 2640:$4.4900
    • 720:$5.5900
    • 240:$6.5700
    • 25:$7.5800
    • 10:$8.0200
    • 1:$8.9200
    IKW50N65ES5XKSA1
    DISTI # XSKDRABS0034498    		Infineon Technologies AG 
    RoHS: Compliant    		1260 in Stock0 on Order
    • 1260:$3.3900
    • 210:$3.6300
    图片 型号 描述
    IKY75N120CS6XKSA1

    Mfr.#: IKY75N120CS6XKSA1

    OMO.#: OMO-IKY75N120CS6XKSA1

    		 IGBT Transistors INDUSTRY 14
    IKA10N65ET6XKSA2

    Mfr.#: IKA10N65ET6XKSA2

    OMO.#: OMO-IKA10N65ET6XKSA2

    		 IGBT Transistors Discrete 650 V TRENCHSTOP IGBT6 with soft, fast recovery anti-parallel Rapid diode
    IKW50N60DTPXKSA1

    Mfr.#: IKW50N60DTPXKSA1

    OMO.#: OMO-IKW50N60DTPXKSA1

    		 IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
    AIGW50N65F5XKSA1

    Mfr.#: AIGW50N65F5XKSA1

    OMO.#: OMO-AIGW50N65F5XKSA1

    		 IGBT Transistors DISCRETES
    IKW50N65ES5

    Mfr.#: IKW50N65ES5

    OMO.#: OMO-IKW50N65ES5

    		 IGBT Transistors Trenchstop 5 IGBT
    IKW50N65WR5XKSA1

    Mfr.#: IKW50N65WR5XKSA1

    OMO.#: OMO-IKW50N65WR5XKSA1

    		 IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/perform
    APT60DQ60BG

    Mfr.#: APT60DQ60BG

    OMO.#: OMO-APT60DQ60BG

    		 Rectifiers FG, FRED. 600V, TO-247, RoHS
    TLP5774(TP,E

    Mfr.#: TLP5774(TP,E

    OMO.#: OMO-TLP5774-TP-E

    		 Logic Output Optocouplers Gate Drive Coupler 10V 4A
    EEE-FK1E560SR

    Mfr.#: EEE-FK1E560SR

    OMO.#: OMO-EEE-FK1E560SR

    		 Aluminum Electrolytic Capacitors - SMD 25VDC 56uF 20% SMD 5x5.8 AEC-Q200
    APT60DQ60BG

    Mfr.#: APT60DQ60BG

    OMO.#: OMO-APT60DQ60BG-MICROSEMI

    		 Rectifiers
    可用性
    库存:
    206
    订购:
    2189
    输入数量:
    IKW50N65ES5XKSA1的当前价格仅供参考，如果您想获得最优惠的价格，请提交查询或直接发送电子邮件至我们的销售团队[email protected]
    参考价格（美元）
    数量
    单价
    小计金额
    1
    US$5.63
    US$5.63
    10
    US$4.78
    US$47.80
    100
    US$4.14
    US$414.00
    250
    US$3.93
    US$982.50
    500
    US$3.53
    US$1 765.00
    1000
    US$3.04
    US$3 040.00
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